Role of Surface Dimer Dynamics in Creating Ordered Organic−Semiconductor Interfaces

2007 ◽  
Vol 129 (40) ◽  
pp. 12172-12180 ◽  
Author(s):  
Robin L. Hayes ◽  
Mark E. Tuckerman
Keyword(s):  
Organic Semiconductor ◽  
Semiconductor Interfaces

The Role of the Ionization Potential in Vacuum-Level Alignment at Organic Semiconductor Interfaces

2007 ◽  
Vol 19 (5) ◽  
pp. 665-668 ◽  
Author(s):  
H. Fukagawa ◽  
S. Kera ◽  
T. Kataoka ◽  
S. Hosoumi ◽  
Y. Watanabe ◽  
...  
Keyword(s):  
Ionization Potential ◽  
Organic Semiconductor ◽  
Vacuum Level ◽  
Semiconductor Interfaces

Fingerprint of Charge Redistribution in the Optical Spectra of Hybrid Inorganic/Organic Semiconductor Interfaces

2018 ◽  
Vol 122 (24) ◽  
pp. 12913-12919 ◽  
Author(s):  
Tino Meisel ◽  
Mino Sparenberg ◽  
Marcel Gawek ◽  
Sergey Sadofev ◽  
Björn Kobin ◽  
...  
Keyword(s):  
Organic Semiconductor ◽  
Optical Spectra ◽  
Charge Redistribution ◽  
Semiconductor Interfaces

Nanoconfining solution-processed organic semiconductors for emerging optoelectronics

2021 ◽  
Author(s):  
Yuze Zhang ◽  
Alina Chen ◽  
Min-Woo Kim ◽  
Aida Alaei ◽  
Stephanie S. Lee
Keyword(s):  
Charge Transport ◽  
Organic Semiconductors ◽  
Organic Semiconductor ◽  
Light Emission ◽  
Solution Processed ◽  
Semiconductor Crystals

This tutorial review highlights the role of nanoconfinement in selecting for orientations and polymorphs of organic semiconductor crystals that are optimized for optoelectronic processes, including charge transport and light emission.

Role of magnetic/nonmagnetic semiconductor interfaces in magneto-optical properties of small-offset superlattices

2002 ◽  
Vol 66 (7) ◽  
Author(s):  
M. Syed ◽  
G. L. Yang ◽  
J. K. Furdyna ◽  
M. Dobrowolska ◽  
S. Lee ◽  
...  
Keyword(s):  
Optical Properties ◽  
Semiconductor Interfaces

Electron Transport Through Epitaxial Metal/Semiconductor Heterostructures

1986 ◽  
Vol 77 ◽  
Author(s):  
A. F. J. Levi ◽  
R. T. Tung ◽  
J. L. Batstone ◽  
J. M. Gibson ◽  
M. Anzlowar ◽  
...  
Keyword(s):  
Electron Transport ◽  
Schottky Barrier ◽  
Semiconductor Heterostructures ◽  
Perfect Single Crystal ◽  
Barrier Heights ◽  
Semiconductor Interfaces ◽  
Semiconductor Contacts ◽  
First Time ◽  
Silicon Heterostructures

ABSTRACTAbrupt, epitaxial silicide/silicon heterostructures may be grown so that, for the first time, the physics of electron transport across near perfect, single crystal, metal/semiconductor interfaces may be probed experimentally. Transport measurements through type-A and -B oriented NiSi2 layers on Si(111) substrates have revealed Schottky barrier heights differing by 140 meV. In this paper we present results of experiments designed to explore the possible role of bulk and interface defects in determining the potential barrier at these near ideal epitaxial metal-semiconductor contacts. We have found little evidence for the presence of defects and the Schottky barrier is insensitive to details of the microscopic interfacial perfection. By contrast we find that both the electrical quality and magnitude of the barrier occurring at the NiSi2 /Si(100) heterojunction are dependent upon details of the microscopic interfacial perfection.

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