Investigation and modeling of plasma-wall interactions in inductively coupled fluorocarbon plasmas

2004 ◽  
Vol 22 (3) ◽  
pp. 689 ◽  
Author(s):  
E. A. Joseph ◽  
B. Zhou ◽  
S. P. Sant ◽  
L. J. Overzet ◽  
M. J. Goeckner
Keyword(s):  
Inductively Coupled ◽  
Fluorocarbon Plasmas ◽  
Wall Interactions

Effect of etching on dielectric constant and surface composition of SiCOH low-k films in inductively coupled fluorocarbon plasmas

2009 ◽  
Vol 517 (14) ◽  
pp. 3942-3946 ◽  
Author(s):  
Sungwoo Lee ◽  
Jihyung Woo ◽  
Donggeun Jung ◽  
Jaeyoung Yang ◽  
Jin-hyo Boo ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Surface Composition ◽  
Inductively Coupled ◽  
Fluorocarbon Plasmas ◽  
Low K

scholarly journals Study of the SiO2-to-Si3N4 etch selectivity mechanism in inductively coupled fluorocarbon plasmas and a comparison with the SiO2-to-Si mechanism

1999 ◽  
Vol 17 (1) ◽  
pp. 26-37 ◽  
Author(s):  
M. Schaepkens ◽  
T. E. F. M. Standaert ◽  
N. R. Rueger ◽  
P. G. M. Sebel ◽  
G. S. Oehrlein ◽  
...  
Keyword(s):  
Inductively Coupled ◽  
Fluorocarbon Plasmas

Gas-phase studies in inductively coupled fluorocarbon plasmas

2001 ◽  
Vol 19 (6) ◽  
pp. 2946 ◽  
Author(s):  
M. Schaepkens ◽  
I. Martini ◽  
E. A. Sanjuan ◽  
X. Li ◽  
G. S. Oehrlein ◽  
...  
Keyword(s):  
Gas Phase ◽  
Inductively Coupled ◽  
Fluorocarbon Plasmas

Diagnostics And Control Of High-Density Etching Plasmas

1995 ◽  
Vol 406 ◽  
Author(s):  
H. Sugai ◽  
K. Nakamura ◽  
T. H. Ahn ◽  
M. Nakamur
Keyword(s):  
Negative Ions ◽  
High Density ◽  
Negative Ion ◽  
Pulsed Plasma ◽  
Surface Charges ◽  
Time Resolved ◽  
Inductively Coupled ◽  
Fluorocarbon Plasmas ◽  
Coupled Plasmas ◽  
And Control

AbstractAdvanced diagnostics of high-density inductively coupled plasmas (ICPs) are presented supporting the following three proposals of innovative etching modes: First, pulsed plasma etching mode can suppress charge-up on high-aspect-ratio micro-patterns. In order to understand the mechanism, time-resolved measurements of electrons, chlorine atoms and negative ions in a pulsed chlorine ICP are performed. As a result of electron cooling and negative ion yield in afterglow, electrons are found to be accelerated toward a rf-biased electrode, thus neutralizing positive surface charges on that. Second, downstream etching mode using C4F8 gas enables high etch selectivity of SiO2 to Si. The reason for this is qualitatively discussed using comprehensive measurements of spatial distributions of CF3, CF2, CF and F densities in CF4 and C4F8 plasmas. Third, hot wall etching mode also enables high selectibity etching in fluorocarbon plasmas. Radical diagnostics reveal that wall heating dramatically modifies the radical composition of both CF4 and C4F8 plasmas, and it improves the etch selectivity and reproducibility.

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