Silicon dioxide etching yield measurements with inductively coupled fluorocarbon plasmas

2003 ◽  
Vol 21 (2) ◽  
pp. 381-387 ◽  
Author(s):  
Heeyeop Chae ◽  
Steven A. Vitale ◽  
Herbert H. Sawin
Keyword(s):  
Silicon Dioxide ◽  
Inductively Coupled ◽  
Fluorocarbon Plasmas

Development of Low Temperature Silicon Nitride and Silicon Dioxide Films by Inductively-Coupled Plasma Chemical Vapor Deposition

1999 ◽  
Vol 573 ◽  
Author(s):  
J. W. Lee ◽  
K. D. Mackenzie ◽  
D. Johnson ◽  
S. J. Pearton ◽  
F. Ren ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Low Temperature ◽  
Silicon Dioxide ◽  
Vapor Deposition ◽  
Inductively Coupled Plasma ◽  
Chemical Vapor ◽  
Plasma Chemical Vapor Deposition ◽  
Inductively Coupled ◽  
Silicon Dioxide Films

ABSTRACTHigh-density plasma technology is becoming increasingly attractive for the deposition of dielectric films such as silicon nitride and silicon dioxide. In particular, inductively-coupled plasma chemical vapor deposition (ICPCVD) offers a great advantage for low temperature processing over plasma-enhanced chemical vapor deposition (PECVD) for a range of devices including compound semiconductors. In this paper, the development of low temperature (< 200°C) silicon nitride and silicon dioxide films utilizing ICP technology will be discussed. The material properties of these films have been investigated as a function of ICP source power, rf chuck power, chamber pressure, gas chemistry, and temperature. The ICPCVD films will be compared to PECVD films in terms of wet etch rate, stress, and other film characteristics. Two different gas chemistries, SiH4/N2/Ar and SiH4/NH3/He, were explored for the deposition of ICPCVD silicon nitride. The ICPCVD silicon dioxide films were prepared from SiH4/O2/Ar. The wet etch rates of both silicon nitride and silicon dioxide films are significantly lower than films prepared by conventional PECVD. This implies that ICPCVD films prepared at these low temperatures are of higher quality. The advanced ICPCVD technology can also be used for efficient void-free filling of high aspect ratio (3:1) sub-micron trenches.

Effect of etching on dielectric constant and surface composition of SiCOH low-k films in inductively coupled fluorocarbon plasmas

2009 ◽  
Vol 517 (14) ◽  
pp. 3942-3946 ◽  
Author(s):  
Sungwoo Lee ◽  
Jihyung Woo ◽  
Donggeun Jung ◽  
Jaeyoung Yang ◽  
Jin-hyo Boo ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Surface Composition ◽  
Inductively Coupled ◽  
Fluorocarbon Plasmas ◽  
Low K

scholarly journals Study of the SiO2-to-Si3N4 etch selectivity mechanism in inductively coupled fluorocarbon plasmas and a comparison with the SiO2-to-Si mechanism

1999 ◽  
Vol 17 (1) ◽  
pp. 26-37 ◽  
Author(s):  
M. Schaepkens ◽  
T. E. F. M. Standaert ◽  
N. R. Rueger ◽  
P. G. M. Sebel ◽  
G. S. Oehrlein ◽  
...  
Keyword(s):  
Inductively Coupled ◽  
Fluorocarbon Plasmas
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