Ion bombardment energy and SiO2/Si fluorocarbon plasma etch selectivity

2001 ◽  
Vol 19 (5) ◽  
pp. 2425-2432 ◽  
Author(s):  
S.-B. Wang ◽  
A. E. Wendt
Keyword(s):  
Ion Bombardment ◽  
Plasma Etch ◽  
Fluorocarbon Plasma ◽  
Bombardment Energy

The Optimization of the Cleaning to Remove Residual Bonds of Si-C and Si-F after Fluorocarbon Plasma Etch on the Silicon Surface

1998 ◽  
Vol 65-66 ◽  
pp. 291-0 ◽  
Author(s):  
Y.B. Kim ◽  
Mikhail R. Baklanov ◽  
Thierry Conard ◽  
Serge Vanhaelemeersch ◽  
W. Vandervorst
Keyword(s):  
Silicon Surface ◽  
Plasma Etch ◽  
Fluorocarbon Plasma

Computational modelling of atomic layer etching of chlorinated germanium surfaces by argon

2019 ◽  
Vol 21 (11) ◽  
pp. 5898-5902
Author(s):  
Shenli Zhang ◽  
Yihan Huang ◽  
Gulcin Tetiker ◽  
Saravanapriyan Sriraman ◽  
Alex Paterson ◽  
...  
Keyword(s):  
Computational Modelling ◽  
Atomic Layer ◽  
Ion Bombardment ◽  
Surface Layers ◽  
Bombardment Energy ◽  
Atomic Layer Etching

Cl ion bombardment energy is clearly responsible for disturbing Ge surface layers.

X-RAY REFLECTIVITY STUDY OF TETRAHEDRAL AMORPHOUS CARBON FILMS

2000 ◽  
Vol 14 (02n03) ◽  
pp. 181-187 ◽  
Author(s):  
B. K. Tay ◽  
X. Shi ◽  
S. P. Lau ◽  
Q. Zhang ◽  
H. C. Chua ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Amorphous Carbon ◽  
Mass Density ◽  
Ion Bombardment ◽  
Carbon Films ◽  
Vacuum Arc ◽  
Amorphous Carbon Films ◽  
X Ray ◽  
Tetrahedral Amorphous Carbon ◽  
Bombardment Energy

Hydrogen-free amorphous carbon films were deposited at different deposition bais voltage on a single silicon wafer by a process known as Filtered Cathodic Vacuum Arc (FCVA). The influences of different deposition bias voltages on the microstructure and the properties of thin tetrahedral amorphous carbon (ta-C) films, such as surface roughness, film mass density and thickness, have been studied by means of the x-ray reflectivity technique (XRR) for the first time. The microstructure of these films deposited on silicon wafers was stimulated by a four-layer model consisting of a ta-C layer, a mixed ta-C:Si layer, Si-O layer and the silicon subtrate. The mixed ta-C:Si layer consisting of the mixture of ta-C and silicon simulates the carbon ion impinging / diffusion into the surface of the silicon substrate. The mass density and the roughness of the film are found to be dependent on the impinging ion bombardment energy. The mass density increases with increase in ion bombardment energy up to 100 eV. Beyond 100 eV, the mass density decreases with further increase in ion bombardment energy up to 100 eV. Beyond 100 EV, the mass density decreases with further increase in ion bombardment energy. The surface roughness decreases with increasing ion bambardment energy to a minimum value at 100 eV, after which it increases with further increase in ion bombardment energy. The thickness of the films obtained by XRR technique correlates well with the thickness measurement obtained by spectral reflectometry. The existence of the Si-O layer was verified by Auger depth profiling.

Post Etch Residue Removal and Material Compatibility in BEOL Using Formulated Chemistries

2014 ◽  
Vol 219 ◽  
pp. 201-204 ◽  
Author(s):  
Els Kesters ◽  
Q.T. Le ◽  
D. Yu ◽  
M. Shen ◽  
S. Braun ◽  
...  
Keyword(s):  
Good Adhesion ◽  
Plasma Etch ◽  
Residue Removal ◽  
Fluorocarbon Plasma ◽  
Lift Off ◽  
Materials Used ◽  
Low K ◽  
Etch Residue ◽  
Processing Steps ◽  
Dielectric Degradation

A possible way to realize a 22.5 nm 1⁄2 pitch and beyond BEOL interconnect structures within the low-kmaterial is the partial-trench via first with self-aligned double patterning (SADP) integration approach. A scheme of this BEOL integration stack with the different materials used after patterning is described in Figure 1. In BEOL processing, fluorocarbon-containing plasma is commonly used to pattern silica-based dielectric layers. During the patterning of the low-kdielectric layer, a thin layer of fluoropolymer (CFx-type residues) is intentionally deposited on the dielectric sidewalls and TiN hardmask to ensure anisotropic etching and prevent/minimize dielectric degradation. This polymer layer must be removed from the sidewall and the via bottom prior to the subsequent processing steps to achieve good adhesion and coverage of materials deposited in the etched features. The compatibility requirement is even more stringent for advanced low-kdielectrics, i.e. materials with lowerk-value and higher porosity. The post etch residue (PER) amount and properties are specific and depend on the stack structure and the plasma that is used for patterning. The low-kmaterials and hardmasks that are used in this work are respectively an organo-silicate glass (OSG) type of low-kmaterial withk= 2.4 (~20 % open porosity) and low-stress TiN. Recent results clearly showed the presence of a highly fluorinated layer deposited on the trench sidewalls during the plasma etch based on a fluorocarbon plasma [1-3]. Commodity aqueous cleaning solutions, such as diluted HF, do not efficiently remove the sidewall polymers without etching the underlying layer (lift-off). Therefore, there is a need for commercially available chemicals that can be easily tuned to deal with the different requirements. This study focuses on the use of FOTOPUR® R 2300 mixed with H2O2 for polymer residue removal selectively to other materials (presented in the stack) such as MHM, metals (Cu, W), and porous low-k dielectrics. We will show that TiN etch can be easily tuned by changing the concentration of H2O2.

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