Surface and gas phase reactions for fluorocarbon plasma etching of Si and SiO/sub 2/

2002 ◽  
Author(s):  
D. Zhang ◽  
M.J. Kushner
Keyword(s):  
Gas Phase ◽  
Plasma Etching ◽  
Gas Phase Reactions ◽  
Fluorocarbon Plasma

Laser Spectroscopic Investigation of Gas-Phase Processes Relevant to Semiconductor Device Fabrication

1982 ◽  
Vol 17 ◽  
Author(s):  
R. F. Karlicek ◽  
V. M. Donnelly ◽  
W. D. Johnston
Keyword(s):  
Gas Phase ◽  
Plasma Etching ◽  
Vapor Deposition ◽  
Semiconductor Device ◽  
Chemical Vapor ◽  
Device Fabrication ◽  
Spectroscopic Techniques ◽  
Gas Phase Reactions ◽  
Multicomponent Gas ◽  
Laser Spectroscopic

ABSTRACTChemical vapor deposition (CVD) and plasma etching are important gas-phase techniques used in fabricating semiconductor devices. These processes frequently involve poorly understood multicomponent gas-phase reactions which control reproducibility and product quality. Laser spectroscopic techniques have recently been developed to investigate CVD and plasma etching. These methods offer several advantages for probing complex systems. A comparison of various probing techniques will be presented, and recent results of laser spectroscopic investigations of plasma etching and CVD of silicon and III-V compounds will be reviewed.

Gas-Phase Reactions

1981 ◽  
Author(s):  
Victor N. Kondratiev ◽  
Evgeniĭ E. Nikitin
Keyword(s):  
Gas Phase ◽  
Gas Phase Reactions

Influence of Gas Mixing and Heating on Gas-Phase Reactions in GaN MOCVD Growth

2012 ◽  
Vol 1 (1) ◽  
pp. P46-P53 ◽  
Author(s):  
Ran Zuo ◽  
Haiqun Yu ◽  
Nan Xu ◽  
Xiaokun He
Keyword(s):  
Gas Phase ◽  
Gas Mixing ◽  
Gas Phase Reactions ◽  
Mocvd Growth

Gas Phase Reactions Activated by Nuclear Processes

1957 ◽  
Vol 79 (17) ◽  
pp. 4609-4616 ◽  
Author(s):  
Adon A. Gordus ◽  
John E. Willard
Keyword(s):  
Gas Phase ◽  
Gas Phase Reactions ◽  
Nuclear Processes

Nanocomposite ceramic powder production by laser-induced gas-phase reactions

1993 ◽  
Vol 168 (2) ◽  
pp. 177-181 ◽  
Author(s):  
E Borsella ◽  
S Botti ◽  
R Alexandrescu ◽  
I Morjan ◽  
T Dikonimos-Makris ◽  
...  
Keyword(s):  
Gas Phase ◽  
Ceramic Powder ◽  
Gas Phase Reactions ◽  
Powder Production

Methylene. III. Gas phase reactions with 1-chloropropane

1969 ◽  
Vol 312 (1509) ◽  
pp. 141-161 ◽  
Keyword(s):  
Gas Phase ◽  
Rate Constants ◽  
Hydrogen Abstraction ◽  
The Other ◽  
Gas Phase Reactions ◽  
Other Hand ◽  
Chlorine Substituent ◽  
High Degree ◽  
Singlet Methylene

The work described in this and the following paper is a continuation of that in parts I and II, devoted to elucidation of the mechanism of the reactions of methylene with chloroalkanes, with particular reference to the reactivities of singlet and triplet methylene in abstraction and insertion processes. The products of the reaction between methylene, prepared by the photolysis of ketene, and 1-chloropropane have been identified and estimated and their dependence on reactant pressures, photolysing wavelength and presence of foreign gases (oxygen and carbon mon­oxide) has been investigated. Both insertion and abstraction mechanisms contribute significantly to the over-all reaction, insertion being relatively much more important than with chloroethane. This type of process appears to be confined to singlet methylene. If, as seems likely, there is no insertion into C—Cl bonds under our conditions (see part IV), insertion into C2—H and C3—H bonds occurs in statistical ratio, approximately. On the other hand, the chlorine substituent reduces the probability of insertion into C—H bonds in its vicinity. As in the chloroethane system, both species of methylene show a high degree of selectivity in their abstraction reactions. We find that k S Cl / k S H >7.7, k T Cl / k T H < 0.14, where the k ’s are rate constants for abstraction, and the super- and subscripts indicate the species of methylene and the type of atom abstracted, respectively. Triplet methylene is discriminating in hydrogen abstraction from 1-C 3 H 7 Cl, the overall rates for atoms attached to C1, C2, C3 being in the ratios 2.63:1:0.

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