Lateral field emitter arrays with high emission currents and wide operation region by high field activation

2003 ◽  
Vol 21 (1) ◽  
pp. 506 ◽  
Author(s):  
Jae-Hoon Lee ◽  
Myoung-Bok Lee ◽  
Sung-Ho Hahm ◽  
Jung-Hee Lee ◽  
Hwa-Il Seo ◽  
...  
Keyword(s):  
High Field ◽  
Lateral Field ◽  
Field Emitter ◽  
Field Emitter Arrays ◽  
High Emission

New Lateral Field Emitter Arrays Inherently Integrated with Thin Film Transistor

1998 ◽  
Vol 509 ◽  
Author(s):  
Moo-Sup Lim ◽  
Cheol-Min Park ◽  
Min-Koo Han ◽  
Yearn-Ik Choi
Keyword(s):  
Thin Film Transistor ◽  
Emission Current ◽  
Anode Current ◽  
Lateral Field ◽  
Field Emitter ◽  
New Device ◽  
Channel Current ◽  
Field Emitter Arrays ◽  
Second Mode ◽  
Excellent Stability

AbstarctWe have fabricated a new three-terminal lateral field emitter structure in which the anode current is limited by the channel current of undoped region. The new device exhibits an excellent stability of the emission current. The field emission characteristics of fabricated device have two modes. In the first mode below 89 V, the mechanism of emission is identical to that of conventional poly-Si emitters and, in the second mode above 89 V, the emission current is limited by the inversion charges in the channel, so stable anode current is maintained. Furthermore, the fabrication process of the device is very simple.

High emission current double-gated field emitter arrays

1999 ◽  
Vol 17 (2) ◽  
pp. 575 ◽  
Author(s):  
Akihiko Hosono ◽  
Shinji Kawabuchi ◽  
Shinji Horibata ◽  
Soichiro Okuda ◽  
Hiroshi Harada ◽  
...  
Keyword(s):  
Emission Current ◽  
Field Emitter ◽  
Field Emitter Arrays ◽  
High Emission

SEM and Field Mmission study of silicon field emitter array

1992 ◽  
Vol 50 (2) ◽  
pp. 1140-1141
Author(s):  
Jiang Liu ◽  
John J. Hren
Keyword(s):  
Silicon Oxide ◽  
Low Voltage ◽  
Radius Of Curvature ◽  
Geometrical Shape ◽  
Geometrical Structures ◽  
Field Emitter ◽  
Field Emitter Arrays ◽  
Sem Micrograph ◽  
High Emission ◽  
Device Applications

Arrays of nanometer-scale field emitters have recently become attractive candidates for device applications where high frequency and high current are desirable attributes. High emission current can be obtained from densely packed Spindt-type emitter arrays with very low extraction voltage. Concern with the optimum geometrical shape of each emitter and the fraction of active emitters, makes a combined study of field emission and scanning electron microscopy especially useful.Several geometrical structures, as well as several materials, have been used to fabricate the field emitter arrays. The present study concentrates on silicon-base emitters fabricated at the Microelectronics Center of North Carolina (MCNC). Each emitter has a pyramidal structure, fabricated by anisotropic chemical etching of highly doped (ND = 1017 cm−3) n-type silicon. Figure 1 shows a SEM micrograph of a typical Si field emitter with a radius of curvature less than 30 nm. The field required for electron emission, about 3 × 107 V/cm, is created by a relatively low voltage applied to the extraction gate, a metal film less than one micron distant and deposited over a dielectric layer of silicon oxide (Figures 2 and 3).

Comparison of Lateral Field Emitter Characteristics for Titanium Silicide, Poly-Si, and Single Crystal Si Tip

1998 ◽  
Vol 509 ◽  
Author(s):  
Moo-Sup Lim ◽  
Cheol-Min Park ◽  
Min-Koo Han ◽  
Yearn-Ik Choi
Keyword(s):  
Current Density ◽  
Emission Current Density ◽  
Titanium Silicide ◽  
Emission Current ◽  
Cathode Voltage ◽  
Lateral Field ◽  
Field Emitter ◽  
Turn On ◽  
Field Emitter Arrays ◽  
The Stability

AbstractWe have fabricated poly-Si, Si, and Ti-silicide field emitter arrays employing in-situ vacuum encapsulated lateral field emitter structures and investigated the field emission characteristics such as turn-on voltage, emission current density, and the stability of emission current. Although poly-Si and Si emitter have almost identical turn-on voltages, Si emitter has a sharper turn-on than poly-Si emitter due to its uniform surface. The current densities of poly-Si, and Si emtter are 0.47, 0.43 μA/tip respectively at anode to cathode voltage of 90 V. The turn-on voltage and current density of Ti-silicide emitter are about 31 V, and 1.81 μA/tip at VAK of 90 V. The data of the normalized current fluctuations indicate that Ti-silicide emitter has the most stable current.Our experiment shows that Ti-silicide is most promising among these three materials due to its low work function, uniform surface, and the stable characteristics.

Fabrication and Characterization of Comb-Shaped Lateral Field-Emitter Arrays

1993 ◽  
Vol 32 (Part 1, No. 3A) ◽  
pp. 1221-1226 ◽  
Author(s):  
Junji Itoh ◽  
Kazuhiko Tsuburaya ◽  
Seigo Kanemaru ◽  
Teruo Watanabe ◽  
Shigeo Itoh
Keyword(s):  
Lateral Field ◽  
Field Emitter ◽  
Field Emitter Arrays ◽  
Fabrication And Characterization

Forms and behaviour of vacuum emission electronic devices comprising diamond or other carbon cold cathode emitters

2007 ◽  
Vol 366 (1863) ◽  
pp. 281-293 ◽  
Author(s):  
J.L Davidson ◽  
W.P Kang ◽  
K Subramanian ◽  
Y.M Wong
Keyword(s):  
Anode Voltage ◽  
Electronic Devices ◽  
Gate Leakage Current ◽  
Lateral Field ◽  
Nanoelectronic Devices ◽  
Turn On ◽  
Field Emitter Arrays ◽  
High Emission ◽  
Electron Field ◽  
Electron Field Emitter

Nanocarbon-derived electron emission devices, specifically nanodiamond lateral field emission (FE) diodes and gated carbon nanotube (CNT) triodes, are new configurations for robust nanoelectronic devices. These novel micro/nanostructures provide an alternative and efficient means of accomplishing electronics that are impervious to temperature and radiation. For example, nitrogen-incorporated nanocrystalline diamond has been lithographically micropatterned to use the material as an electron field emitter. Arrays of laterally arranged ‘finger-like’ nanodiamond emitters constitute the cathode in a versatile diode configuration with a small interelectrode separation. A low diode turn-on voltage of 7 V and a high emission current of 90 μA at an anode voltage of 70 V (electric field of approx. 7 V μm −1 ) are reported for the nanodiamond lateral device. Also, a FE triode amplifier based on aligned CNTs with a low turn-on voltage and a small gate leakage current has been developed.

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