Comparison of Lateral Field Emitter Characteristics for Titanium Silicide, Poly-Si, and Single Crystal Si Tip

1998 ◽  
Vol 509 ◽  
Author(s):  
Moo-Sup Lim ◽  
Cheol-Min Park ◽  
Min-Koo Han ◽  
Yearn-Ik Choi
Keyword(s):  
Current Density ◽  
Emission Current Density ◽  
Titanium Silicide ◽  
Emission Current ◽  
Cathode Voltage ◽  
Lateral Field ◽  
Field Emitter ◽  
Turn On ◽  
Field Emitter Arrays ◽  
The Stability

AbstractWe have fabricated poly-Si, Si, and Ti-silicide field emitter arrays employing in-situ vacuum encapsulated lateral field emitter structures and investigated the field emission characteristics such as turn-on voltage, emission current density, and the stability of emission current. Although poly-Si and Si emitter have almost identical turn-on voltages, Si emitter has a sharper turn-on than poly-Si emitter due to its uniform surface. The current densities of poly-Si, and Si emtter are 0.47, 0.43 μA/tip respectively at anode to cathode voltage of 90 V. The turn-on voltage and current density of Ti-silicide emitter are about 31 V, and 1.81 μA/tip at VAK of 90 V. The data of the normalized current fluctuations indicate that Ti-silicide emitter has the most stable current.Our experiment shows that Ti-silicide is most promising among these three materials due to its low work function, uniform surface, and the stable characteristics.

Large field emission current density from well-aligned carbon nanotube field emitter arrays

2001 ◽  
Vol 1 (1) ◽  
pp. 61-65 ◽  
Author(s):  
Jung Inn Sohn ◽  
Seonghoon Lee ◽  
Yoon-Ho Song ◽  
Sung-Yool Choi ◽  
Kyoung-Ik Cho ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Field Emission ◽  
Current Density ◽  
Emission Current Density ◽  
Emission Current ◽  
Large Field ◽  
Field Emitter ◽  
Field Emitter Arrays ◽  
Field Emission Current ◽  
Field Emission Current Density

Silicon Field Emitter Array by Fast Anodization Method

2000 ◽  
Vol 621 ◽  
Author(s):  
Y.M. Fung ◽  
W.Y. Cheung ◽  
I.H. Wilson ◽  
J.B. Xu ◽  
S.P. Wong
Keyword(s):  
Current Density ◽  
Silicon Oxide ◽  
Emission Current Density ◽  
Field Emitter ◽  
Turn On ◽  
Field Emitter Arrays ◽  
Isotropic Etching ◽  
Field Emitters ◽  
Emitter Array ◽  
Field Emitter Array

ABSTRACTA new fast fabrication method entailing, two step anodization of silicon with different HF solutions was used to form a high aspect ratio silicon Field Emitter Array on n-type silicon (resistivity of 0.01cm). A Silicon oxide mask was used to define the field emitter array. The silicon substrate was pre-anodized with low current density for 1 minute in the dark and then anodized in HF:H2O:Ethanol solution. Finally, the porous silicon was removed by isotropic solution etching. The turn-on voltage of the fabricated field emitters was approximately 27V/μm when the emission current density reaches 1μA/cm2. This compares with the turn-on field of about 35V/μm on silicon tip array fabricated by using an isotropic etching solution of HNO3. We obtained field emitter arrays with good uniformity and reproducibility.

High emission current density, vertically aligned carbon nanotube mesh, field emitter array

2010 ◽  
Vol 97 (11) ◽  
pp. 113107 ◽  
Author(s):  
Chi Li ◽  
Yan Zhang ◽  
Mark Mann ◽  
David Hasko ◽  
Wei Lei ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Current Density ◽  
Emission Current Density ◽  
Emission Current ◽  
Field Emitter ◽  
High Emission ◽  
Vertically Aligned ◽  
Emitter Array ◽  
Field Emitter Array

New Lateral Field Emitter Arrays Inherently Integrated with Thin Film Transistor

1998 ◽  
Vol 509 ◽  
Author(s):  
Moo-Sup Lim ◽  
Cheol-Min Park ◽  
Min-Koo Han ◽  
Yearn-Ik Choi
Keyword(s):  
Thin Film Transistor ◽  
Emission Current ◽  
Anode Current ◽  
Lateral Field ◽  
Field Emitter ◽  
New Device ◽  
Channel Current ◽  
Field Emitter Arrays ◽  
Second Mode ◽  
Excellent Stability

AbstarctWe have fabricated a new three-terminal lateral field emitter structure in which the anode current is limited by the channel current of undoped region. The new device exhibits an excellent stability of the emission current. The field emission characteristics of fabricated device have two modes. In the first mode below 89 V, the mechanism of emission is identical to that of conventional poly-Si emitters and, in the second mode above 89 V, the emission current is limited by the inversion charges in the channel, so stable anode current is maintained. Furthermore, the fabrication process of the device is very simple.

Low turn-on field and high field emission current density from Ag/TiO2 nanocomposite

2016 ◽  
Vol 657 ◽  
pp. 167-171 ◽  
Author(s):  
Girish P. Patil ◽  
Amol B. Deore ◽  
Vivekanand S. Bagal ◽  
Dattatray J. Late ◽  
Mahendra A. More ◽  
...  
Keyword(s):  
Field Emission ◽  
Current Density ◽  
High Field ◽  
Emission Current Density ◽  
Emission Current ◽  
Turn On ◽  
Field Emission Current ◽  
Field Emission Current Density

Field emitter density control effect on emission current density by Ag–Cu alloy coating on carbon nanotubes

2008 ◽  
Vol 93 (10) ◽  
pp. 103101 ◽  
Author(s):  
Seung Youb Lee ◽  
Won Chel Choi ◽  
Cheolho Jeon ◽  
Chong-Yun Park ◽  
Ji Hoon Yang ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Current Density ◽  
Alloy Coating ◽  
Emission Current Density ◽  
Emission Current ◽  
Control Effect ◽  
Field Emitter ◽  
Cu Alloy ◽  
Density Control

Polypyrrole nanostructures and their field emission investigations

2015 ◽  
Vol 29 (06n07) ◽  
pp. 1540035 ◽  
Author(s):  
Kashmira Harpale ◽  
Mahendra A. More ◽  
Pankaj M. Koinkar ◽  
Sandip S. Patil ◽  
Kishor M. Sonawane
Keyword(s):  
Field Emission ◽  
Current Density ◽  
Monomer Concentration ◽  
Emission Current Density ◽  
Emission Current ◽  
Electrically Conducting ◽  
Turn On ◽  
High Emission ◽  
Granular Morphology ◽  
Very High

Polypyrrole (PPy) nanostructures have been synthesized on indium doped tin oxide (ITO) substrates by a facile electrochemical route employing cyclic voltammetry (CV) mode. The morphology of the PPy thin films was observed to be influenced by the monomer concentration. Furthermore, FTIR revealed formation of electrically conducting state of PPy. Field emission investigations of the PPy nanostructures were carried out at base pressure of 1×10-8 mbar . The values of turn-on field, corresponding to emission current density of 1 μA/cm2 were observed to be 0.6, 1.0 and 1.2 V/μm for the PPy films characterized with rod-like, cauliflower and granular morphology, respectively. In case of PPy nanorods maximum current density of 1.2 mA/cm2 has been drawn at electric field of 1 V/μm. The low turn on field, extraction of very high emission current density at relatively lower applied field and good emission stability propose the PPy nanorods as a promising material for field emission based devices.

A New Thermionic Cathode Based on Carbon Nanotubes with a Thin Layer of Low Work Function Barium Strontium Oxide Surface Coating

2008 ◽  
Vol 1142 ◽  
Author(s):  
Feng Jin ◽  
Yan Liu ◽  
Scott A Little ◽  
Chris M Day
Keyword(s):  
Work Function ◽  
Current Density ◽  
Enhancement Factor ◽  
Thermionic Emission ◽  
Field Enhancement ◽  
Oxide Coating ◽  
Emission Current Density ◽  
Emission Current ◽  
Strontium Oxide ◽  
Barium Strontium

ABSTRACTWe have created a thermionic cathode structure that consists of a thin tungsten ribbon; carbon nanotubes (CNTs) on the ribbon surface; and a thin layer of low work function barium strontium oxide coating on the CNTs. This oxide coated CNT cathode was designed to combine the benefits from the high field enhancement factor from CNTs and the low work function from the emissive oxide coating. The field emission and thermionic emission properties of the cathode have been characterized. A field enhancement factor of 266 and a work function of 1.9 eV were obtained. At 1221 K, a thermionic emission current density of 1.22A/cm2 in an electric field of 1.1 V/μm was obtained, which is four orders of magnitude greater than the emission current density from the uncoated CNT cathode at the same temperature. The high emission current density at such a modest temperature is among the best ever reported for an oxide cathode.

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