Forms and behaviour of vacuum emission electronic devices comprising diamond or other carbon cold cathode emitters

2007 ◽  
Vol 366 (1863) ◽  
pp. 281-293 ◽  
Author(s):  
J.L Davidson ◽  
W.P Kang ◽  
K Subramanian ◽  
Y.M Wong
Keyword(s):  
Anode Voltage ◽  
Electronic Devices ◽  
Gate Leakage Current ◽  
Lateral Field ◽  
Nanoelectronic Devices ◽  
Turn On ◽  
Field Emitter Arrays ◽  
High Emission ◽  
Electron Field ◽  
Electron Field Emitter

Nanocarbon-derived electron emission devices, specifically nanodiamond lateral field emission (FE) diodes and gated carbon nanotube (CNT) triodes, are new configurations for robust nanoelectronic devices. These novel micro/nanostructures provide an alternative and efficient means of accomplishing electronics that are impervious to temperature and radiation. For example, nitrogen-incorporated nanocrystalline diamond has been lithographically micropatterned to use the material as an electron field emitter. Arrays of laterally arranged ‘finger-like’ nanodiamond emitters constitute the cathode in a versatile diode configuration with a small interelectrode separation. A low diode turn-on voltage of 7 V and a high emission current of 90 μA at an anode voltage of 70 V (electric field of approx. 7 V μm −1 ) are reported for the nanodiamond lateral device. Also, a FE triode amplifier based on aligned CNTs with a low turn-on voltage and a small gate leakage current has been developed.

Lateral field emitter arrays with high emission currents and wide operation region by high field activation

2003 ◽  
Vol 21 (1) ◽  
pp. 506 ◽  
Author(s):  
Jae-Hoon Lee ◽  
Myoung-Bok Lee ◽  
Sung-Ho Hahm ◽  
Jung-Hee Lee ◽  
Hwa-Il Seo ◽  
...  
Keyword(s):  
High Field ◽  
Lateral Field ◽  
Field Emitter ◽  
Field Emitter Arrays ◽  
High Emission

scholarly journals Micro-Nano Fabrication of Self-Aligned Silicon Electron Field Emitter Arrays Using Pulsed KrF Laser Irradiation

2020 ◽  
Vol 204 (1) ◽  
pp. 47-57
Author(s):  
Mohammed Zubair Mohammed Shamim ◽  
Saydulla Persheyev ◽  
Monji Zaidi ◽  
Mohammed Usman ◽  
Mohammad Shiblee ◽  
...  
Keyword(s):  
Laser Irradiation ◽  
Field Emitter ◽  
Nano Fabrication ◽  
Field Emitter Arrays ◽  
Krf Laser ◽  
Electron Field ◽  
Electron Field Emitter

Nanodiamond Lateral Field Emission Diode Devices

2006 ◽  
Vol 48 ◽  
pp. 77-82
Author(s):  
Karthik Subramanian ◽  
W.P. Kang ◽  
J.L. Davidson
Keyword(s):  
Electric Field ◽  
Field Emission ◽  
High Speed ◽  
Anode Voltage ◽  
Electrode Spacing ◽  
Lateral Field ◽  
Field Emitters ◽  
High Emission ◽  
Emission Behavior ◽  
Field Emitter Array

We are fabricating and examining nanocarbon derived electron emission devices, specifically, nanodiamond lateral field emission diodes. These novel microstructures provide interesting means of accomplishing electronics that are unaffected by temperature and radiation and have promise for high-speed and high-power applications with their small inter-electrode spacing and efficient emitter geometry. The characteristic properties of nanocrystalline diamond are favourable for lateral field emitters. In this work, we report the fabrication process advancement and field emission behavior of the nanodiamond comb-shaped field emitter array in diode configuration. The lateral diode design includes arrays of high aspect-ratio nanodiamond emitter fingers arranged in a comb-like structure with spacing as small as 2 μm from the nanodiamond anode. The 9000- fingered lateral field emission diode (8 μm anode-cathode spacing) exhibited a turn-on voltage of 60 V (threshold electric field: 7.5 V/μm) and a high emission current over ~ 25 mA at an anode voltage of 260 V (electric field ~ 32 V/μm).

Comparison of Lateral Field Emitter Characteristics for Titanium Silicide, Poly-Si, and Single Crystal Si Tip

1998 ◽  
Vol 509 ◽  
Author(s):  
Moo-Sup Lim ◽  
Cheol-Min Park ◽  
Min-Koo Han ◽  
Yearn-Ik Choi
Keyword(s):  
Current Density ◽  
Emission Current Density ◽  
Titanium Silicide ◽  
Emission Current ◽  
Cathode Voltage ◽  
Lateral Field ◽  
Field Emitter ◽  
Turn On ◽  
Field Emitter Arrays ◽  
The Stability

AbstractWe have fabricated poly-Si, Si, and Ti-silicide field emitter arrays employing in-situ vacuum encapsulated lateral field emitter structures and investigated the field emission characteristics such as turn-on voltage, emission current density, and the stability of emission current. Although poly-Si and Si emitter have almost identical turn-on voltages, Si emitter has a sharper turn-on than poly-Si emitter due to its uniform surface. The current densities of poly-Si, and Si emtter are 0.47, 0.43 μA/tip respectively at anode to cathode voltage of 90 V. The turn-on voltage and current density of Ti-silicide emitter are about 31 V, and 1.81 μA/tip at VAK of 90 V. The data of the normalized current fluctuations indicate that Ti-silicide emitter has the most stable current.Our experiment shows that Ti-silicide is most promising among these three materials due to its low work function, uniform surface, and the stable characteristics.

Power Withstanding Capability and Transient Temperature of Carbon Nanotube-Based Nano Electrical Interconnects

2021 ◽  
Author(s):  
Femi Robert
Keyword(s):  
Carbon Nanotube ◽  
Transient Analysis ◽  
Electronic Devices ◽  
Transient Temperature ◽  
Nanoelectronic Devices ◽  
Cu Interconnects ◽  
Electrical Interconnects ◽  
Steady State Temperature ◽  
The Given ◽  
The Continuum

Abstract This paper exhibits the electrothermal modelling and evaluation of Carbon Nanotube (CNT) based electrical interconnects for electronic devices. The continuum model of the CNT is considered and the temperature across interconnect is predicted for the given power. Finite element modelling software COMSOL Multiphysics is used to carry out the simulations. The results are compared with Al and Cu interconnects. An electrothermal analysis is also carried out to obtain the temperature for the given power for Single-Walled CNT, Double-Walled CNT, Triple-Walled CNT, and Multi-Walled CNT. Results show that the CNT interconnects performs better when compared to Al and Cu interconnects. The power withstanding capability of CNT is 68.75 times more than Al and 32.35 times more than Cu. Based on the transient analysis, the time taken by the CNT interconnects to reach a steady temperature is obtained as 0.007 ns. On the application of power, Cu and Al interconnects takes 0.1 ns to reach the steady-state temperature. The nanostructured CNT based electrical interconnects would play a considerable role in replacing Cu and Al electrical interconnect applications for micro and nanoelectronic devices.

A standing molecule as a coherent single-electron field emitter

2021 ◽  
Author(s):  
Taner Esat ◽  
Marvin Knol ◽  
Philipp Leinen ◽  
Matthew F. B. Green ◽  
Malte Esders ◽  
...  
Keyword(s):  
Single Electron ◽  
Field Emitter ◽  
Electron Field ◽  
Electron Field Emitter

Gold Overcoatings on Spindt-Type Field Emitter Arrays

1996 ◽  
Vol 424 ◽  
Author(s):  
S. L. Skala ◽  
D. A. Ohlberg ◽  
A. A. Talin ◽  
T. E. Felter
Keyword(s):  
Electron Emission ◽  
Current Noise ◽  
Gold Deposition ◽  
Field Emitter ◽  
Emission Properties ◽  
Turn On ◽  
Field Emitter Arrays ◽  
Before And After ◽  
Emitter Array ◽  
Field Emitter Array

ABSTRACTThe electron emission properties of a Spindt-type field emitter array have been measured before and after deposition of approximately 100 Å of gold. The workfunction of the emitter decreased by 5% after gold deposition resulting in an 11% reduction in turn-on voltage. Emission stability as measured by RMS current noise improved by 40%. Improvements in emission do not withstand exposure to air. However, baking at moderate temperatures (200°C) restores the emission improvements obtained with the gold overcoating. Fowler-Nordheim plots show that the enhanced emission after baking is due to a increase of the Fowler-Nordheim intercept and not a decrease in slope. Additionally, the gold over coatings resist poisoning as a 50,000 L dose of oxygen only slightly affects emission.

scholarly journals Progress in Cooling Nanoelectronic Devices to Ultra-Low Temperatures

2020 ◽  
Vol 201 (5-6) ◽  
pp. 772-802 ◽  
Author(s):  
A. T. Jones ◽  
C. P. Scheller ◽  
J. R. Prance ◽  
Y. B. Kalyoncu ◽  
D. M. Zumbühl ◽  
...  
Keyword(s):  
State Of The Art ◽  
Electronic Devices ◽  
Bulk Materials ◽  
Nanoelectronic Devices ◽  
Current State ◽  
Physical Effects ◽  
On Chip ◽  
Nanoscale Physics ◽  
A Current ◽  
Made In

AbstractHere we review recent progress in cooling micro-/nanoelectronic devices significantly below 10 mK. A number of groups worldwide are working to produce sub-millikelvin on-chip electron temperatures, motivated by the possibility of observing new physical effects and improving the performance of quantum technologies, sensors and metrological standards. The challenge is a longstanding one, with the lowest reported on-chip electron temperature having remained around 4 mK for more than 15 years. This is despite the fact that microkelvin temperatures have been accessible in bulk materials since the mid-twentieth century. In this review, we describe progress made in the last 5 years using new cooling techniques. Developments have been driven by improvements in the understanding of nanoscale physics, material properties and heat flow in electronic devices at ultralow temperatures and have involved collaboration between universities and institutes, physicists and engineers. We hope that this review will serve as a summary of the current state of the art and provide a roadmap for future developments. We focus on techniques that have shown, in experiment, the potential to reach sub-millikelvin electron temperatures. In particular, we focus on on-chip demagnetisation refrigeration. Multiple groups have used this technique to reach temperatures around 1 mK, with a current lowest temperature below 0.5 mK.

Investigation on Field Electron Emission from Carbon Nanotubes on Nanocrystalline Diamond Films

2005 ◽  
Vol 23 ◽  
pp. 35-38 ◽  
Author(s):  
K.J. Liao ◽  
W.L. Wang ◽  
C. Cai ◽  
J.W. Lu ◽  
C.G. Hu
Keyword(s):  
Carbon Nanotubes ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Nanocrystalline Diamond ◽  
Electron Field Emission ◽  
Si Substrates ◽  
Turn On ◽  
Nanocrystalline Diamond Films ◽  
Electron Field ◽  
Hot Filament

The electron field emission from carbon nanotubes on nanocrystalline diamond films was investigated. Carbon nanotubes and nano-diamond films were deposited on Si substrates by hot filament chemical vapor deposition. The experimental results showed that the carbon nanotubes on nanostructured films exhibited a lower value of the turn-on electric field than those of carbon nanotubes and nano-diamond. It was found that the turn-on field of nanotubes on nano-diamond was about 0.9V/μm, which was lower than those of carbon nanotubes and nano-diamond.

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