High emission current double-gated field emitter arrays

2002 ◽  
Author(s):  
A. Hosono ◽  
S. Kawabuchi ◽  
S. Horibata ◽  
S. Okuda ◽  
H. Harada ◽  
...  
Keyword(s):  
Emission Current ◽  
Field Emitter ◽  
Field Emitter Arrays ◽  
High Emission

High emission current double-gated field emitter arrays

1999 ◽  
Vol 17 (2) ◽  
pp. 575 ◽  
Author(s):  
Akihiko Hosono ◽  
Shinji Kawabuchi ◽  
Shinji Horibata ◽  
Soichiro Okuda ◽  
Hiroshi Harada ◽  
...  
Keyword(s):  
Emission Current ◽  
Field Emitter ◽  
Field Emitter Arrays ◽  
High Emission

Lateral field emitter arrays with high emission currents and wide operation region by high field activation

2003 ◽  
Vol 21 (1) ◽  
pp. 506 ◽  
Author(s):  
Jae-Hoon Lee ◽  
Myoung-Bok Lee ◽  
Sung-Ho Hahm ◽  
Jung-Hee Lee ◽  
Hwa-Il Seo ◽  
...  
Keyword(s):  
High Field ◽  
Lateral Field ◽  
Field Emitter ◽  
Field Emitter Arrays ◽  
High Emission

High emission current density, vertically aligned carbon nanotube mesh, field emitter array

2010 ◽  
Vol 97 (11) ◽  
pp. 113107 ◽  
Author(s):  
Chi Li ◽  
Yan Zhang ◽  
Mark Mann ◽  
David Hasko ◽  
Wei Lei ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Current Density ◽  
Emission Current Density ◽  
Emission Current ◽  
Field Emitter ◽  
High Emission ◽  
Vertically Aligned ◽  
Emitter Array ◽  
Field Emitter Array

New Lateral Field Emitter Arrays Inherently Integrated with Thin Film Transistor

1998 ◽  
Vol 509 ◽  
Author(s):  
Moo-Sup Lim ◽  
Cheol-Min Park ◽  
Min-Koo Han ◽  
Yearn-Ik Choi
Keyword(s):  
Thin Film Transistor ◽  
Emission Current ◽  
Anode Current ◽  
Lateral Field ◽  
Field Emitter ◽  
New Device ◽  
Channel Current ◽  
Field Emitter Arrays ◽  
Second Mode ◽  
Excellent Stability

AbstarctWe have fabricated a new three-terminal lateral field emitter structure in which the anode current is limited by the channel current of undoped region. The new device exhibits an excellent stability of the emission current. The field emission characteristics of fabricated device have two modes. In the first mode below 89 V, the mechanism of emission is identical to that of conventional poly-Si emitters and, in the second mode above 89 V, the emission current is limited by the inversion charges in the channel, so stable anode current is maintained. Furthermore, the fabrication process of the device is very simple.

Large field emission current density from well-aligned carbon nanotube field emitter arrays

2001 ◽  
Vol 1 (1) ◽  
pp. 61-65 ◽  
Author(s):  
Jung Inn Sohn ◽  
Seonghoon Lee ◽  
Yoon-Ho Song ◽  
Sung-Yool Choi ◽  
Kyoung-Ik Cho ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Field Emission ◽  
Current Density ◽  
Emission Current Density ◽  
Emission Current ◽  
Large Field ◽  
Field Emitter ◽  
Field Emitter Arrays ◽  
Field Emission Current ◽  
Field Emission Current Density

SEM and Field Mmission study of silicon field emitter array

1992 ◽  
Vol 50 (2) ◽  
pp. 1140-1141
Author(s):  
Jiang Liu ◽  
John J. Hren
Keyword(s):  
Silicon Oxide ◽  
Low Voltage ◽  
Radius Of Curvature ◽  
Geometrical Shape ◽  
Geometrical Structures ◽  
Field Emitter ◽  
Field Emitter Arrays ◽  
Sem Micrograph ◽  
High Emission ◽  
Device Applications

Arrays of nanometer-scale field emitters have recently become attractive candidates for device applications where high frequency and high current are desirable attributes. High emission current can be obtained from densely packed Spindt-type emitter arrays with very low extraction voltage. Concern with the optimum geometrical shape of each emitter and the fraction of active emitters, makes a combined study of field emission and scanning electron microscopy especially useful.Several geometrical structures, as well as several materials, have been used to fabricate the field emitter arrays. The present study concentrates on silicon-base emitters fabricated at the Microelectronics Center of North Carolina (MCNC). Each emitter has a pyramidal structure, fabricated by anisotropic chemical etching of highly doped (ND = 1017 cm−3) n-type silicon. Figure 1 shows a SEM micrograph of a typical Si field emitter with a radius of curvature less than 30 nm. The field required for electron emission, about 3 × 107 V/cm, is created by a relatively low voltage applied to the extraction gate, a metal film less than one micron distant and deposited over a dielectric layer of silicon oxide (Figures 2 and 3).

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