Undoped poly-Si tip lateral field emitter arrays with stable anode current by self-current limiting

2002 ◽  
Author(s):  
Moo-Sup Lim ◽  
Cheol-Min Park ◽  
Min-Koo Han ◽  
Yearn-Ik Choi
Keyword(s):  
Anode Current ◽  
Lateral Field ◽  
Field Emitter ◽  
Field Emitter Arrays ◽  
Current Limiting

New Lateral Field Emitter Arrays Inherently Integrated with Thin Film Transistor

1998 ◽  
Vol 509 ◽  
Author(s):  
Moo-Sup Lim ◽  
Cheol-Min Park ◽  
Min-Koo Han ◽  
Yearn-Ik Choi
Keyword(s):  
Thin Film Transistor ◽  
Emission Current ◽  
Anode Current ◽  
Lateral Field ◽  
Field Emitter ◽  
New Device ◽  
Channel Current ◽  
Field Emitter Arrays ◽  
Second Mode ◽  
Excellent Stability

AbstarctWe have fabricated a new three-terminal lateral field emitter structure in which the anode current is limited by the channel current of undoped region. The new device exhibits an excellent stability of the emission current. The field emission characteristics of fabricated device have two modes. In the first mode below 89 V, the mechanism of emission is identical to that of conventional poly-Si emitters and, in the second mode above 89 V, the emission current is limited by the inversion charges in the channel, so stable anode current is maintained. Furthermore, the fabrication process of the device is very simple.

Lateral field emitter arrays with high emission currents and wide operation region by high field activation

2003 ◽  
Vol 21 (1) ◽  
pp. 506 ◽  
Author(s):  
Jae-Hoon Lee ◽  
Myoung-Bok Lee ◽  
Sung-Ho Hahm ◽  
Jung-Hee Lee ◽  
Hwa-Il Seo ◽  
...  
Keyword(s):  
High Field ◽  
Lateral Field ◽  
Field Emitter ◽  
Field Emitter Arrays ◽  
High Emission

Comparison of Lateral Field Emitter Characteristics for Titanium Silicide, Poly-Si, and Single Crystal Si Tip

1998 ◽  
Vol 509 ◽  
Author(s):  
Moo-Sup Lim ◽  
Cheol-Min Park ◽  
Min-Koo Han ◽  
Yearn-Ik Choi
Keyword(s):  
Current Density ◽  
Emission Current Density ◽  
Titanium Silicide ◽  
Emission Current ◽  
Cathode Voltage ◽  
Lateral Field ◽  
Field Emitter ◽  
Turn On ◽  
Field Emitter Arrays ◽  
The Stability

AbstractWe have fabricated poly-Si, Si, and Ti-silicide field emitter arrays employing in-situ vacuum encapsulated lateral field emitter structures and investigated the field emission characteristics such as turn-on voltage, emission current density, and the stability of emission current. Although poly-Si and Si emitter have almost identical turn-on voltages, Si emitter has a sharper turn-on than poly-Si emitter due to its uniform surface. The current densities of poly-Si, and Si emtter are 0.47, 0.43 μA/tip respectively at anode to cathode voltage of 90 V. The turn-on voltage and current density of Ti-silicide emitter are about 31 V, and 1.81 μA/tip at VAK of 90 V. The data of the normalized current fluctuations indicate that Ti-silicide emitter has the most stable current.Our experiment shows that Ti-silicide is most promising among these three materials due to its low work function, uniform surface, and the stable characteristics.

Fabrication and Characterization of Comb-Shaped Lateral Field-Emitter Arrays

1993 ◽  
Vol 32 (Part 1, No. 3A) ◽  
pp. 1221-1226 ◽  
Author(s):  
Junji Itoh ◽  
Kazuhiko Tsuburaya ◽  
Seigo Kanemaru ◽  
Teruo Watanabe ◽  
Shigeo Itoh
Keyword(s):  
Lateral Field ◽  
Field Emitter ◽  
Field Emitter Arrays ◽  
Fabrication And Characterization

Optically stimulated picosecond field emission pulses from gated p-silicon field emitter arrays

2007 ◽  
Vol 90 (8) ◽  
pp. 083506 ◽  
Author(s):  
Chin-Jen Chiang ◽  
Kendrick X. Liu ◽  
Jonathan P. Heritage
Keyword(s):  
Field Emission ◽  
Field Emitter ◽  
Field Emitter Arrays
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