End point of silicon milling using an optical beam induced current signal for controlled access to integrated circuits for backside circuit editing

2002 ◽  
Vol 20 (6) ◽  
pp. 2695 ◽  
Author(s):  
N. Antoniou ◽  
N. J. Bassom ◽  
C. Huynh ◽  
D. Monforte ◽  
J. D. Casey ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Optical Beam ◽  
Induced Current ◽  
Current Signal ◽  
End Point ◽  
Optical Beam Induced Current

An Analytical Technique to Assess the Risk of Laser Damage to Encapsulated Integrated Circuits during Package Laser Marking

2008 ◽  
Author(s):  
Joseph Patterson ◽  
Cliff Schuring
Keyword(s):  
Integrated Circuits ◽  
Optical Beam ◽  
Laser Damage ◽  
Induced Current ◽  
Induced Voltage ◽  
Laser Marking ◽  
Thermally Induced ◽  
Analytical Technique ◽  
Optical Beam Induced Current

Abstract Damage to encapsulated integrated circuits has recently been reported due to Laser marking of the package. A method to assess the risk of such damage is presented. The method is an analytical technique using Thermally Induced Voltage Alteration (XIVA) and Optical Beam Induced Current (OBIC) imaging.

scholarly journals Interest of Using a Micro-Meter Spatial Resolution to Study SiC Semi-Conductor Devices by Optical Beam Induced Current (OBIC)

2020 ◽  
Vol 1004 ◽  
pp. 290-298
Author(s):  
Camille Sonneville ◽  
Dominique Planson ◽  
Luong Viet Phung ◽  
Pascal Bevilacqua ◽  
Besar Asllani
Keyword(s):  
Band Gap ◽  
Spatial Resolution ◽  
High Voltage ◽  
Test Bench ◽  
Wide Band ◽  
Optical Beam ◽  
Induced Current ◽  
Wide Band Gap ◽  
Optical Beam Induced Current

In this paper we present a new test bench called micro-OBIC used to characterized wide band gap semi-conductor. Micro-OBIC allows to get an Optical Beam Induced Current (OBIC) signal with a microscopic spatial resolution. We used micro-OBIC to characterize peripheral protection such as MESA, JTE or JTE in high voltage SiC device.

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