Influences of reaction products on etch rates and linewidths in a poly-Si/oxide etching process using HBr/O[sub 2] based inductively coupled plasma

Author(s):  
K. Miwa ◽  
T. Mukai
1998 ◽  
Vol 512 ◽  
Author(s):  
J. J. Wang ◽  
Hyun Cho ◽  
E. S. Lambers ◽  
S. J. Peartont ◽  
M. Ostling ◽  
...  

ABSTRACTA parametric study of the etching characteristics of 6H p+ and n+ SiC and thin film SiC0.8N0.2 in Inductively Coupled Plasma NF3/O2 and NF3/Ar discharges has been performed. The etch rates in both chemistries increase monotonically with NF3 percentage and rf chuck power reaching 3500Å·min−1 for SiC and 7500 Å·min−1 for SiCN. The etch rates go through a maximum with increasing ICP source power, which is explained by a trade-off between the increasing ion flux and the decreasing ion energy. The anisotropy of the etched features is also a function of ion flux, ion energy and atomic fluorine neutral concentration. Indium-tinoxide( ITO) masks display relatively good etch selectivity over SiC(maximum of 70:1) while photoresist etches more rapidly than SiC. The surface roughness of SiC is essentially independent of plasma composition for NF3/O2 discharges, while extensive surface degradation occurs for SiCN under high NF3:O2 conditions. The high ion flux available in the ICP tool allows etching even at very low dc self-biases, ≤ −10V, leading to very low damage pattern transfer.


1997 ◽  
Vol 468 ◽  
Author(s):  
C. B. Vartuli ◽  
J. W. Lee ◽  
J. D. MacKenzie ◽  
S. M. Donovan ◽  
C. R. Abernathy ◽  
...  

ABSTRACTInductively coupled plasma etching of GaN, AlN, InN, InGaN and InAlN was investigated in CH4/H2/Ar plasmas as a function of dc bias, and ICP power. The etch rates were generally quite low, as is common for III-nitrides in CH4 based chemistries. The etch rates increased with increasing dc bias. At low rf power (150W), the etch rates increased with increasing ICP power, while at 350W rf power, a peak was found between 500 and 750 W ICP power. The etched surfaces were found to be smooth, while selectivities of etch were ≤ 6 for InN over GaN, AlN, InGaN and InAlN under all conditions.


SPE Journal ◽  
2016 ◽  
Vol 21 (03) ◽  
pp. 1050-1060 ◽  
Author(s):  
Qin Ji ◽  
Lijun Zhou ◽  
Hisham Nasr-El-Din

Summary Aluminum chloride (AlCl3) has been used as a retarding agent for mud acid for a long time; its applications are studied in the laboratory and tested in the field. The theory and mechanism of AlCl3 retardation were investigated in many works involving mud acidizing and reservoir-permeability enhancement. This paper furthers this investigation with solubility tests, coreflood tests, and 19F nuclear magnetic resonance (NMR) to better understand the mechanism of AlCl3 working as a retarding agent in mud acid. The reactivity of Al-based retarded mud acid (15 wt% HCl, 1.5 wt% HF, and 5 wt% AlCl3·6H2O) with clay minerals and sandstones at different conditions has not been examined fully. To enhance the acid performance and to minimize formation damage, a systematic investigation of the interactions between the Al-based retarded mud acid and clay minerals in sandstone reservoirs is provided in this study. Furthermore, for the first time, 19F NMR spectroscopy was used to follow the reactions of Al-based retarded mud acid with clay minerals. Solubility tests were performed to evaluate the retardation of the Al-based retarded mud acid when reacted with kaolinite, bentonite, and illite. Inductively coupled plasma (ICP) and 19F NMR were used to analyze the concentrations of key cations and components in the supernatant, whereas the scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDS) techniques were used to identify the reaction products and to explore the possibility of the presence of any precipitation. Coreflood tests of sandstone cores were also conducted. This study shows that AlCl3 can retard the reaction of hydrofluoric acid (HF) with kaolinite, bentonite, or illite at 75 and 200 °F in Al-based retarded mud acid. Even with 5 wt% AlCl3·6H2O added in the acid system, no AlF3 precipitate was observed in any of the solubility tests. 19F NMR results showed that AlF4− and AlF3 were the only Al-F species existing in the spent Al-based retarded mud acid. H2SiF6 and HSiF5 were also identified. Coreflood tests showed significant permeability improvement to Berea sandstone when Al-based retarded mud acid was used, and the enhancement diminished when the temperature increased to 300 °F. Computed-tomography (CT) scan showed deeper penetration of Al-based retarded mud acid than mud acid at 75 °F, and the penetration reduced when temperature increased to 200 °F. On the basis of these results, new mechanisms were developed to better understand the reaction of Al-based retarded mud acid and clay minerals.


2020 ◽  
Author(s):  
Jing Ma ◽  
Yongqiang Zhao ◽  
Wen Liu ◽  
Fuhua Yang ◽  
Xiaodong Wang

Abstract GaAs nanostructures has attracted more and more attention due to its excellent properties such as increasing photon absorption. The fabrication process on GaAs substrate were rarely reported and most of the preparation processes are complex. Here, we reported a black GaAs fabrication process using a simple Inductively coupled plasma (ICP) etching process,with no extra lithography process. The fabricated sample has a low Reflectance value,close to zero. Besides, the black GaAs also displayed hydrophobic property, with a water contact angle (CA) of 125°. This kind of black GaAs etching process could be added to the fabrication workflow of photodetectors and solar cell devices to further improve their characteristics.


1999 ◽  
Vol 4 (S1) ◽  
pp. 763-768
Author(s):  
Hyun Cho ◽  
Y.B. Hahn ◽  
D.C. Hays ◽  
K.B. Jung ◽  
S.M. Donovan ◽  
...  

The role of additive noble gases He, Ar and Xe to Cl2-based Inductively Coupled Plasmas for etching of GaN, AlN and InN were examined. The etch rates were a strong function of chlorine concentration, rf chuck power and ICP source power. The highest etch rates for InN were obtained with Cl2/Xe, while the highest rates for AlN and GaN were obtained with Cl2/He. Efficient breaking of the III-nitrogen bond is crucial for attaining high etch rates. The InN etching was dominated by physical sputtering, in contrast to GaN and AlN. In the latter cases, the etch rates were limited by initial breaking of the III-nitrogen bond. Maximum selectivities of ∼ 80 for InN to GaN and InN to AlN were obtained.


2020 ◽  
Vol 41 (12) ◽  
pp. 122103
Author(s):  
Yongkang Xu ◽  
Sannian Song ◽  
Wencheng Fang ◽  
Chengxing Li ◽  
Zhitang Song

2014 ◽  
Vol 2014 ◽  
pp. 1-8 ◽  
Author(s):  
Chiung-Wei Huang ◽  
Shing-Tai Pan ◽  
Jun-Tin Zhou ◽  
Cheng-Yuan Chang

Temperature control in etching process is important for semiconductor manufacturing technology. However, pressure variations in vacuum chamber results in a change in temperature, worsening the accuracy of the temperature of the wafer and the speed and quality of the etching process. This work develops an adaptive network-based fuzzy inference system (ANFIS) using a field-programmable gate array (FPGA) to improve the effectiveness. The proposed method adjusts every membership function to keep the temperature in the chamber stable. The improvement of the proposed algorithm is confirmed using a medium vacuum (MV) inductively-coupled plasma- (ICP-) type etcher.


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