Analysis of silicon–oxide–silicon nitride stacks by medium-energy ion scattering

2000 ◽  
Vol 18 (5) ◽  
pp. 2503 ◽  
Author(s):  
D. Landheer ◽  
P. Ma ◽  
W. N. Lennard ◽  
I. V. Mitchell ◽  
C. McNorgan
1995 ◽  
Vol 52 (3) ◽  
pp. 1759-1775 ◽  
Author(s):  
E. P. Gusev ◽  
H. C. Lu ◽  
T. Gustafsson ◽  
E. Garfunkel

1990 ◽  
Vol 202 ◽  
Author(s):  
J. Vrijmoeth ◽  
P.M. Zagwijn ◽  
J.W.M. Frenken ◽  
J.F. van der Veen

ABSTRACTThe surface structure of epitaxial NiSi2 films grown on Si (111) has been determined using a new method. The backscattering signals from subsequent Ni layers in the NiSi2 (111) surface are resolved.The topology of the NiSi2 (111) surface is concluded to be bulklike, i.e., it is terminated by a Si – Ni – Si triple layer.


2011 ◽  
Vol 605 (1-2) ◽  
pp. 220-224 ◽  
Author(s):  
Johan Gustafson ◽  
Andrew R. Haire ◽  
Christopher J. Baddeley

2007 ◽  
Vol 601 (2) ◽  
pp. 352-361 ◽  
Author(s):  
S.L. Harmer ◽  
L.V. Goncharova ◽  
R. Kolarova ◽  
W.N. Lennard ◽  
M.A. Muñoz-Márquez ◽  
...  

2006 ◽  
Vol 18 (22) ◽  
pp. 5017-5027 ◽  
Author(s):  
T C Q Noakes ◽  
P Bailey ◽  
M Draxler ◽  
C F McConville ◽  
A R Ross ◽  
...  

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