Sub-Surface Crack Analysis for Diamond Slurry Lapping of Sapphire Wafers

2014 ◽  
Author(s):  
Chao-Chang A. Chen ◽  
Wei-Kang Tu ◽  
Jyun-Kai Yang
Keyword(s):  
Surface Crack ◽  
Focused Ion Beam ◽  
Light Emitting Diode ◽  
Ion Beam ◽  
Crack Problem ◽  
Surface Damage ◽  
Diamond Grit ◽  
Sapphire Wafer ◽  
Damage Layer ◽  
Wafer Processing

Sapphire or mono-crystalline aluminum oxide wafers have been popularly adopted as the substrates of epi-layer process for the rapid growing demands of high-brightness light emitting diode (HB LED) industry. The HB LED devices for solid-state illumination have attracted immerse investigation of sub-surface crack problem induced in sapphire wafer processing. The diamond lapping has been recognized as a critical process for affecting the final polishing of sapphire wafers. This paper is to investigate the sub-surface damage layer induced by the diamond slurry lapping processes of sapphire wafers with two kinds of benchmark diamond slurries with different properties. All test wafers have been measured by dial gauge to observe the variation of thickness first and then the surface topography and subsurface properties have been inspected by coherence interferometer, CCI-Lite (Taylor Hobson, UK) instrument and then dual-focus focused ion beam, FIB (FEI Quanta 3D FEG) for sub-surface crack observation. The diamond slurry is composed with diamond abrasive grits and carrier for lapping with resin copper grooved plate. In this study, two slurries are noted as F and S both with the nominal diamond grit size 3 micron. The carriers are glycol based with viscosity ranged around 20 cP in room temperature and the viscosity-temperature plots have been measured for such slurry. Experimental results have shown that the 3D average surface roughness, Sa is obtained as 9.12 nm for sapphire wafer lapped by F slurry and as 6.63 nm lapped by S slurry. Thus the relationship of particle size distribution (PSD) of diamond grits and also the viscosity-temperature effect can be considered as key factors to MRR and surface quality of diamond lapping process of sapphire wafers. The sub-surface cracks can then be observed by FIB instrument and then quantified to evaluate the effects of diamond lapping process in order to shorten the further polishing time.

Focused Ion Beam (FIB) Milling Damage Formed During Tem Sample Preparation of Silicon

1998 ◽  
Vol 4 (S2) ◽  
pp. 656-657 ◽  
Author(s):  
David W. Susnitzky ◽  
Kevin D. Johnson
Keyword(s):  
Sample Preparation ◽  
Focused Ion Beam ◽  
Semiconductor Device ◽  
Process Development ◽  
Ion Beam ◽  
Surface Damage ◽  
Development Effort ◽  
Ion Milling ◽  
Preparation Methods ◽  
Damage Layer

The ongoing reduction of scale of semiconductor device structures places increasing demands on the sample preparation methods used for transmission electron microscopy (TEM). Much of the semiconductor industry's failure analysis and new process development effort requires specific transistor, metal or dielectric structures to be analyzed using TEM techniques. Focused ion beam (FIB) milling has emerged as a valuable technique for site-specific TEM sample preparation. FIB milling, typically with 25-50kV Ga+ ions, enables thin TEM samples to be prepared with submicron precision. However, Ga+ ion milling significantly modifies the surfaces of TEM samples by implantation and amorphization. Previous work using 90° milling angles has shown that Ga+ ion milling of Si produces a surface damage layer that is 280Å thick. This damage is problematical since the current generation of semiconductor devices requires TEM samples in the 500-1000Å thickness range.

Annealing recovery of nanoscale silicon surface damage caused by Ga focused ion beam

2015 ◽  
Vol 343 ◽  
pp. 56-69 ◽  
Author(s):  
Y.J. Xiao ◽  
F.Z. Fang ◽  
Z.W. Xu ◽  
X.T. Hu
Keyword(s):  
Silicon Surface ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Surface Damage

scholarly journals Control of Nano-Step Structures on Sapphire Wafer Surface by Focused Ion Beam Processing

2005 ◽  
Vol 113 (1319) ◽  
pp. 478-483 ◽  
Author(s):  
Atsuko TAKEUCHI ◽  
Toshiro KOTAKI ◽  
Koji KOYAMA ◽  
Kazuhiko SUNAKAWA ◽  
Yoichi YAGUCHI ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Wafer Surface ◽  
Sapphire Wafer

Focused Ion Beam Induced Surface Damage Effect on the Mechanical Properties of Silicon Nanowires

2013 ◽  
Vol 135 (4) ◽  
Author(s):  
Tatsuya Fujii ◽  
Takahiro Namazu ◽  
Koichi Sudoh ◽  
Shouichi Sakakihara ◽  
Shozo Inoue
Keyword(s):  
Mechanical Properties ◽  
Young’S Modulus ◽  
Focused Ion Beam ◽  
Young's Modulus ◽  
Ion Beam ◽  
Surface Damage ◽  
Ambient Air ◽  
Film Deposition ◽  
Displacement Sensor ◽  
Uniaxial Tensile

In this paper, the effect of surface damage induced by focused ion beam (FIB) fabrication on the mechanical properties of silicon (Si) nanowires (NWs) was investigated. Uniaxial tensile testing of the NWs was performed using a reusable on-chip tensile test device with 1000 pairs of comb structures working as an electrostatic force actuator, a capacitive displacement sensor, and a force sensor. Si NWs were made from silicon-on-nothing (SON) membranes that were produced by deep reactive ion etching hole fabrication and ultrahigh vacuum annealing. Micro probe manipulation and film deposition functions in a FIB system were used to bond SON membranes to the device's sample stage and then to directly fabricate Si NWs on the device. All the NWs showed brittle fracture in ambient air. The Young's modulus of 57 nm-wide NW was 107.4 GPa, which was increased to 144.2 GPa with increasing the width to 221 nm. The fracture strength ranged from 3.9 GPa to 7.3 GPa. By assuming the thickness of FIB-induced damage layer, the Young's modulus of the layer was estimated to be 96.2 GPa, which was in good agreement with the literature value for amorphous Si.

scholarly journals Single-Wedge Lift-Out for Atom Probe Tomography Al/Ni Multilayers Specimen Preparation Based on Dual-Beam-FIB

Micromachines ◽  
2021 ◽  
Vol 13 (1) ◽  
pp. 35
Author(s):  
Yi Qiao ◽  
Yalong Zhao ◽  
Zheng Zhang ◽  
Binbin Liu ◽  
Fusheng Li ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Atom Probe ◽  
Vertex Angle ◽  
Specimen Preparation ◽  
Two Phase ◽  
Interface Composition ◽  
Damage Layer ◽  
Dual Beam ◽  
Relationship Of

Atomic probe tomography (APT) samples with Al/Ni multilayer structure were successfully prepared by using a focused ion beam (FIB), combining with a field emission scanning electron microscope, with a new single-wedge lift-out method and a reduced amorphous damage layer of Ga ions implantation. The optimum vertex angle and preparation parameters of APT sample were discussed. The double interdiffusion relationship of the multilayer films was successfully observed by the local electrode APT, which laid a foundation for further study of the interface composition and crystal structure of the two-phase composites.

AC Hot-Carrier Effects Characterization by Circuit Modification Using Focused Ion Beam

1998 ◽  
Author(s):  
Yong-koo Yoo ◽  
Chong-ha Lee ◽  
Jung-hwan Lee
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Ring Oscillator ◽  
Voltage Waveform ◽  
Hot Carrier ◽  
Before And After ◽  
Wafer Processing ◽  
Hot Carrier Effects ◽  
Stress Voltage

Abstract Focused Ion Beam (FIB) is used to modify a ring-oscillator circuit to enable the direct characterization of AC hot-carrier effects. Probe access to internal device nodes is necessary to find out the amount of individual device degradation resulting from AC hot-carrier stress. The circuit modification on an existing wafer by FIB enables the direct measurement of individual device in the circuit before and after AC hotcarrier stressing without resorting to new mask sets and silicon wafer processing for new hotcarrier reliability test circuits that can provide realistic stress voltage waveform. Small pads produced by FIB have small acceptable impact on the stress waveform of the circuit and they still allow accurate measurement of the internal device nodes. FIB’s ‘cut and paste’ technique is used to form these probe pads. Some suggestions are made for the proper FIB work in this paper. The results of AC hot-carrier tests with the circuit modified by FIB are also presented with some illustrative figures.

Site-Specific, Wide Field-of-View Cross-Sectional Sample Preparation, Imaging and Analysis in a Plasma Ion Source Helios DualBeam™ Microscope

2014 ◽  
Author(s):  
Roger Alvis ◽  
Ron Kelley
Keyword(s):  
Focused Ion Beam ◽  
Light Emitting Diode ◽  
Ion Beam ◽  
Processing System ◽  
Plasma Source ◽  
Ion Source ◽  
Field Of View ◽  
Wide Field ◽  
Cross Sectional ◽  
Wide Field Of View

Abstract A Plasma-source focused ion beam (Helios PFIB) DualBeam™ microscope with sub-nanometer 1kV SEM resolution was used to investigate the structure of a state-of-the-art organic light-emitting diode (OLED) display. The capability of the Helios PFIB to produce and manipulate millimeter-scale samples for wide field-of-view crosssectional SEM analyses was demonstrated by lifting out a 570μm long by 40μm wide x 10μm deep and mounting it on a copper half-grid. An angled face was cut into the chunk and high-resolution back-scattered SEM tiles across the entire exposed face were automatically acquired within a modular automated processing system (MAPS).

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