Assessment of surface damage and sidewall implantation in AlGaN-based high electron mobility transistor devices caused during focused-ion-beam milling

2008 ◽  
Vol 104 (9) ◽  
pp. 094304 ◽  
Author(s):  
David A. Cullen ◽  
David J. Smith
Keyword(s):  
Electron Mobility ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
High Electron Mobility Transistor ◽  
Surface Damage ◽  
High Electron ◽  
High Electron Mobility ◽  
Focused Ion Beam Milling

Preparation of AlGaN-based High Electron Mobility Transistor Devices using Focused Ion Beam Milling

2008 ◽  
Vol 14 (S2) ◽  
pp. 1030-1031 ◽  
Author(s):  
DA Cullen ◽  
DJ Smith
Keyword(s):  
New Mexico ◽  
Electron Mobility ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Focused Ion Beam Milling

Extended abstract of a paper presented at Microscopy and Microanalysis 2008 in Albuquerque, New Mexico, USA, August 3 – August 7, 2008

Anomalous Hall Effect in Gd-implanted Wurtzite AlxGa1-xN High Electron Mobility Transistor Structures

2008 ◽  
Vol 1111 ◽  
Author(s):  
Fang-Yuh Lo ◽  
Alexander Melnikov ◽  
Dirk Reuter ◽  
Yvon Cordier ◽  
Andreas D. Wieck
Keyword(s):  
Hall Effect ◽  
Electron Mobility ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Magnetic Ordering ◽  
High Electron Mobility Transistor ◽  
Anomalous Hall Effect ◽  
Sample Surface ◽  
High Electron ◽  
High Electron Mobility

AbstractAlxGa1- xN/GaN high electron mobility transistor (HEMT) structures grown by ammonia-source molecular beam epitaxy (MBE) are focused-ion-beam implanted with 300 keV Gd-ions at room temperature. The two-dimensional electron gas (2DEG) of these HEMT structures is located 27 nm underneath the sample surface. At 4.2 K, current-voltage characteristics across implanted rectangles show that the structures remain conducting up to a Gd-dose of 1×1012 cm-2. Anomalous Hall effect (AHE) is observed at T = 4.2 K for structures implanted with Gd, whose dose is 3×1011 cm-2. Measurements of AHE in the wide temperature range from 2.4 K to 300 K show that the magnetic ordering temperature of these structures is around 100 K. Therefore, these Gd-implanted HEMT structures containing the still conducting 2DEG, which is now embedded in a ferromagnetic semiconductor, open the possibility to polarize the electron spins.

The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor

2019 ◽  
Vol 217 (7) ◽  
pp. 1900694
Author(s):  
Uiho Choi ◽  
Donghyeop Jung ◽  
Kyeongjae Lee ◽  
Taemyung Kwak ◽  
Taehoon Jang ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Double Heterostructure ◽  
Aln Buffer

Double δ-Doped Enhancement-Mode InGaP/AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor for Linearity Application

2006 ◽  
Vol 45 (No. 35) ◽  
pp. L932-L934 ◽  
Author(s):  
Li-Hsin Chu ◽  
Heng-Tung Hsu ◽  
Edward-Yi Chang ◽  
Tser-Lung Lee ◽  
Sze-Hung Chen ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Enhancement Mode
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