Annealing recovery of nanoscale silicon surface damage caused by Ga focused ion beam

2015 ◽  
Vol 343 ◽  
pp. 56-69 ◽  
Author(s):  
Y.J. Xiao ◽  
F.Z. Fang ◽  
Z.W. Xu ◽  
X.T. Hu
Keyword(s):  
Silicon Surface ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Surface Damage

Focused Ion Beam Induced Surface Damage Effect on the Mechanical Properties of Silicon Nanowires

2013 ◽  
Vol 135 (4) ◽  
Author(s):  
Tatsuya Fujii ◽  
Takahiro Namazu ◽  
Koichi Sudoh ◽  
Shouichi Sakakihara ◽  
Shozo Inoue
Keyword(s):  
Mechanical Properties ◽  
Young’S Modulus ◽  
Focused Ion Beam ◽  
Young's Modulus ◽  
Ion Beam ◽  
Surface Damage ◽  
Ambient Air ◽  
Film Deposition ◽  
Displacement Sensor ◽  
Uniaxial Tensile

In this paper, the effect of surface damage induced by focused ion beam (FIB) fabrication on the mechanical properties of silicon (Si) nanowires (NWs) was investigated. Uniaxial tensile testing of the NWs was performed using a reusable on-chip tensile test device with 1000 pairs of comb structures working as an electrostatic force actuator, a capacitive displacement sensor, and a force sensor. Si NWs were made from silicon-on-nothing (SON) membranes that were produced by deep reactive ion etching hole fabrication and ultrahigh vacuum annealing. Micro probe manipulation and film deposition functions in a FIB system were used to bond SON membranes to the device's sample stage and then to directly fabricate Si NWs on the device. All the NWs showed brittle fracture in ambient air. The Young's modulus of 57 nm-wide NW was 107.4 GPa, which was increased to 144.2 GPa with increasing the width to 221 nm. The fracture strength ranged from 3.9 GPa to 7.3 GPa. By assuming the thickness of FIB-induced damage layer, the Young's modulus of the layer was estimated to be 96.2 GPa, which was in good agreement with the literature value for amorphous Si.

Investigation of sub-surface damage during sliding wear of alumina using focused ion-beam milling

Wear ◽  
2002 ◽  
Vol 252 (7-8) ◽  
pp. 531-539 ◽  
Author(s):  
Sitthichoke Chaiwan ◽  
Mark Hoffman ◽  
Paul Munroe ◽  
Ulrich Stiefel
Keyword(s):  
Sliding Wear ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Surface Damage ◽  
Focused Ion Beam Milling

Focused Ion Beam (FIB) Milling Damage Formed During Tem Sample Preparation of Silicon

1998 ◽  
Vol 4 (S2) ◽  
pp. 656-657 ◽  
Author(s):  
David W. Susnitzky ◽  
Kevin D. Johnson
Keyword(s):  
Sample Preparation ◽  
Focused Ion Beam ◽  
Semiconductor Device ◽  
Process Development ◽  
Ion Beam ◽  
Surface Damage ◽  
Development Effort ◽  
Ion Milling ◽  
Preparation Methods ◽  
Damage Layer

The ongoing reduction of scale of semiconductor device structures places increasing demands on the sample preparation methods used for transmission electron microscopy (TEM). Much of the semiconductor industry's failure analysis and new process development effort requires specific transistor, metal or dielectric structures to be analyzed using TEM techniques. Focused ion beam (FIB) milling has emerged as a valuable technique for site-specific TEM sample preparation. FIB milling, typically with 25-50kV Ga+ ions, enables thin TEM samples to be prepared with submicron precision. However, Ga+ ion milling significantly modifies the surfaces of TEM samples by implantation and amorphization. Previous work using 90° milling angles has shown that Ga+ ion milling of Si produces a surface damage layer that is 280Å thick. This damage is problematical since the current generation of semiconductor devices requires TEM samples in the 500-1000Å thickness range.

scholarly journals Investigation of the effect of annealing on Si(100) substrate modified by Ga+ focused ion beam

2021 ◽  
Vol 2086 (1) ◽  
pp. 012027
Author(s):  
M M Eremenko ◽  
N A Shandyba ◽  
N E Chernenko ◽  
S V Balakirev ◽  
L S Nikitina ◽  
...  
Keyword(s):  
Surface Treatment ◽  
Silicon Surface ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Substrate Material ◽  
Significant Damage

Abstract In this work, we studied the effect of annealing the silicon surface on the morphology of focused ion beam modified areas. It was found that an increase in the ion beam accelerating voltage during surface treatment significantly affects the morphology and the appearance of the implanted material on the surface or its absence/evaporation during annealing. It is shown that an increase in number of ion beam passes leads to the formation of holes on the surface of the modified areas, which is a sign that significant damage to the substrate material has occurred.

Sub-Surface Crack Analysis for Diamond Slurry Lapping of Sapphire Wafers

2014 ◽  
Author(s):  
Chao-Chang A. Chen ◽  
Wei-Kang Tu ◽  
Jyun-Kai Yang
Keyword(s):  
Surface Crack ◽  
Focused Ion Beam ◽  
Light Emitting Diode ◽  
Ion Beam ◽  
Crack Problem ◽  
Surface Damage ◽  
Diamond Grit ◽  
Sapphire Wafer ◽  
Damage Layer ◽  
Wafer Processing

Sapphire or mono-crystalline aluminum oxide wafers have been popularly adopted as the substrates of epi-layer process for the rapid growing demands of high-brightness light emitting diode (HB LED) industry. The HB LED devices for solid-state illumination have attracted immerse investigation of sub-surface crack problem induced in sapphire wafer processing. The diamond lapping has been recognized as a critical process for affecting the final polishing of sapphire wafers. This paper is to investigate the sub-surface damage layer induced by the diamond slurry lapping processes of sapphire wafers with two kinds of benchmark diamond slurries with different properties. All test wafers have been measured by dial gauge to observe the variation of thickness first and then the surface topography and subsurface properties have been inspected by coherence interferometer, CCI-Lite (Taylor Hobson, UK) instrument and then dual-focus focused ion beam, FIB (FEI Quanta 3D FEG) for sub-surface crack observation. The diamond slurry is composed with diamond abrasive grits and carrier for lapping with resin copper grooved plate. In this study, two slurries are noted as F and S both with the nominal diamond grit size 3 micron. The carriers are glycol based with viscosity ranged around 20 cP in room temperature and the viscosity-temperature plots have been measured for such slurry. Experimental results have shown that the 3D average surface roughness, Sa is obtained as 9.12 nm for sapphire wafer lapped by F slurry and as 6.63 nm lapped by S slurry. Thus the relationship of particle size distribution (PSD) of diamond grits and also the viscosity-temperature effect can be considered as key factors to MRR and surface quality of diamond lapping process of sapphire wafers. The sub-surface cracks can then be observed by FIB instrument and then quantified to evaluate the effects of diamond lapping process in order to shorten the further polishing time.

Transmission Electron Microscopy Nano Beam Diffraction Sensitivity Study in Focused Ion Beam Prepared Semiconductor Test Structures

2017 ◽  
Author(s):  
James Demarest
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Strain Analysis ◽  
Surface Damage ◽  
Sample Surface ◽  
Sensitivity Study ◽  
Image Resolution ◽  
Advanced Technology ◽  
Step Size ◽  
Transmission Electron

Abstract In this paper, a sample was made on an advanced technology node finFET test structure and analyzed in a 200kV TEM equipped with a 4k camera and commercially available strain analysis software using a sub 5nm parallel probe. It was observed that doubling the step size of the data acquisition from 5nm per step to 2.5nm per step with a 4k image resolution changed the sensitivity of the data by about 4%. However, increasing the number of pixels of each diffraction pattern from 2k to 4k and removing the focused ion beam prepared sample surface damage both showed greater than 10% improvements in nano beam electron diffraction (NBD) sensitivity greater than 10%. As a result, it is possible to obtain greater sensitivity of the NBD technique by employing these changes in response to the evolving characterization needs.

Surface damage induced by focused-ion-beam milling in a Si/Si p–n junction cross-sectional specimen

2005 ◽  
Vol 241 (1-2) ◽  
pp. 80-86 ◽  
Author(s):  
Zhouguang Wang ◽  
Takeharu Kato ◽  
Tsukasa Hirayama ◽  
Naoko Kato ◽  
Katsuhiro Sasaki ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Surface Damage ◽  
Cross Sectional ◽  
Focused Ion Beam Milling
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