scholarly journals Control of Nano-Step Structures on Sapphire Wafer Surface by Focused Ion Beam Processing

2005 ◽  
Vol 113 (1319) ◽  
pp. 478-483 ◽  
Author(s):  
Atsuko TAKEUCHI ◽  
Toshiro KOTAKI ◽  
Koji KOYAMA ◽  
Kazuhiko SUNAKAWA ◽  
Yoichi YAGUCHI ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Wafer Surface ◽  
Sapphire Wafer

Sub-Surface Crack Analysis for Diamond Slurry Lapping of Sapphire Wafers

2014 ◽  
Author(s):  
Chao-Chang A. Chen ◽  
Wei-Kang Tu ◽  
Jyun-Kai Yang
Keyword(s):  
Surface Crack ◽  
Focused Ion Beam ◽  
Light Emitting Diode ◽  
Ion Beam ◽  
Crack Problem ◽  
Surface Damage ◽  
Diamond Grit ◽  
Sapphire Wafer ◽  
Damage Layer ◽  
Wafer Processing

Sapphire or mono-crystalline aluminum oxide wafers have been popularly adopted as the substrates of epi-layer process for the rapid growing demands of high-brightness light emitting diode (HB LED) industry. The HB LED devices for solid-state illumination have attracted immerse investigation of sub-surface crack problem induced in sapphire wafer processing. The diamond lapping has been recognized as a critical process for affecting the final polishing of sapphire wafers. This paper is to investigate the sub-surface damage layer induced by the diamond slurry lapping processes of sapphire wafers with two kinds of benchmark diamond slurries with different properties. All test wafers have been measured by dial gauge to observe the variation of thickness first and then the surface topography and subsurface properties have been inspected by coherence interferometer, CCI-Lite (Taylor Hobson, UK) instrument and then dual-focus focused ion beam, FIB (FEI Quanta 3D FEG) for sub-surface crack observation. The diamond slurry is composed with diamond abrasive grits and carrier for lapping with resin copper grooved plate. In this study, two slurries are noted as F and S both with the nominal diamond grit size 3 micron. The carriers are glycol based with viscosity ranged around 20 cP in room temperature and the viscosity-temperature plots have been measured for such slurry. Experimental results have shown that the 3D average surface roughness, Sa is obtained as 9.12 nm for sapphire wafer lapped by F slurry and as 6.63 nm lapped by S slurry. Thus the relationship of particle size distribution (PSD) of diamond grits and also the viscosity-temperature effect can be considered as key factors to MRR and surface quality of diamond lapping process of sapphire wafers. The sub-surface cracks can then be observed by FIB instrument and then quantified to evaluate the effects of diamond lapping process in order to shorten the further polishing time.

Use of Focused Ion Beam Milling for Patterned Growth of Carbon Nanotubes

2008 ◽  
Vol 1089 ◽  
Author(s):  
Ying Chen ◽  
Ying Chen ◽  
Hua Chen ◽  
James S Williams
Keyword(s):  
Carbon Nanotubes ◽  
Surface Morphology ◽  
Crystalline Structure ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Wafer Surface ◽  
Iron Phthalocyanine ◽  
Patterned Growth ◽  
Special Surface ◽  
Si Wafer

AbstractA new template technique has been developed to help patterned growth of carbon nanotubes (CNTs) on Si surface without predeposition of metal catalysts. Focused ion beam (FIB) milling was used to create trenches on Si wafer surface as the template and carbon nanotubes only nucleated and grew inside the trenches during a controlled pyrolysis of iron phthalocyanine at 1000oC. The selective growth in the trenches is due to its special surface morphology, crystalline structure and capillarity effect.

Nanocomposite Polyurethane Foams Via POSS Blends

2002 ◽  
Vol 733 ◽  
Author(s):  
Brock McCabe ◽  
Steven Nutt ◽  
Brent Viers ◽  
Tim Haddad
Keyword(s):  
High Temperature ◽  
Sample Preparation ◽  
Room Temperature ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Polyurethane Foams ◽  
Development Projects ◽  
Polymer Systems ◽  
Polyurethane Resin ◽  
Military Development

AbstractPolyhedral Oligomeric Silsequioxane molecules have been incorporated into a commercial polyurethane formulation to produce nanocomposite polyurethane foam. This tiny POSS silica molecule has been used successfully to enhance the performance of polymer systems using co-polymerization and blend strategies. In our investigation, we chose a high-temperature MDI Polyurethane resin foam currently used in military development projects. For the nanofiller, or “blend”, Cp7T7(OH)3 POSS was chosen. Structural characterization was accomplished by TEM and SEM to determine POSS dispersion and cell morphology, respectively. Thermal behavior was investigated by TGA. Two methods of TEM sample preparation were employed, Focused Ion Beam and Ultramicrotomy (room temperature).

An Study of Influence of Imperfections on the Delamination of Diamond-Like Carbon Films

2002 ◽  
Vol 719 ◽  
Author(s):  
Myoung-Woon Moon ◽  
Kyang-Ryel Lee ◽  
Jin-Won Chung ◽  
Kyu Hwan Oh
Keyword(s):  
Cross Sections ◽  
Focused Ion Beam ◽  
Imaging System ◽  
Ion Beam ◽  
Carbon Films ◽  
Diamond Like Carbon ◽  
Glass Substrates ◽  
Atomic Force ◽  
Initiation And Propagation

AbstractThe role of imperfections on the initiation and propagation of interface delaminations in compressed thin films has been analyzed using experiments with diamond-like carbon (DLC) films deposited onto glass substrates. The surface topologies and interface separations have been characterized by using the Atomic Force Microscope (AFM) and the Focused Ion Beam (FIB) imaging system. The lengths and amplitudes of numerous imperfections have been measured by AFM and the interface separations characterized on cross sections made with the FIB. Chemical analysis of several sites, performed using Auger Electron Spectroscopy (AES), has revealed the origin of the imperfections. The incidence of buckles has been correlated with the imperfection length.

Low Energy Ar Ion Milling of FIB TEM Specimens from 14 nm and Future FinFET Technologies

2018 ◽  
Author(s):  
C.S. Bonifacio ◽  
P. Nowakowski ◽  
M.J. Campin ◽  
M.L. Ray ◽  
P.E. Fischione
Keyword(s):  
Field Effect Transistor ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Ion Milling ◽  
Transmission Electron ◽  
High Resolution Tem ◽  
Effect Transistor ◽  
20 Nm ◽  
Argon Ion

Abstract Transmission electron microscopy (TEM) specimens are typically prepared using the focused ion beam (FIB) due to its site specificity, and fast and accurate thinning capabilities. However, TEM and high-resolution TEM (HRTEM) analysis may be limited due to the resulting FIB-induced artifacts. This work identifies FIB artifacts and presents the use of argon ion milling for the removal of FIB-induced damage for reproducible TEM specimen preparation of current and future fin field effect transistor (FinFET) technologies. Subsequently, high-quality and electron-transparent TEM specimens of less than 20 nm are obtained.

Automated Diagonal Slice and View Solution for 3D Device Structure Analysis

2018 ◽  
Author(s):  
Sang Hoon Lee ◽  
Jeff Blackwood ◽  
Stacey Stone ◽  
Michael Schmidt ◽  
Mark Williamson ◽  
...  
Keyword(s):  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Image Data ◽  
Planar Surface ◽  
Device Structure ◽  
Cross Sectional ◽  
Device Structures ◽  
The Cross ◽  
Planar Analysis

Abstract The cross-sectional and planar analysis of current generation 3D device structures can be analyzed using a single Focused Ion Beam (FIB) mill. This is achieved using a diagonal milling technique that exposes a multilayer planar surface as well as the cross-section. this provides image data allowing for an efficient method to monitor the fabrication process and find device design errors. This process saves tremendous sample-to-data time, decreasing it from days to hours while still providing precise defect and structure data.

Novel Approach of Improving Secondary Electron Detector in FIB System

2018 ◽  
Author(s):  
Steve Wang ◽  
Jim McGinn ◽  
Peter Tvarozek ◽  
Amir Weiss
Keyword(s):  
Integrated Circuit ◽  
Secondary Electron ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Vital Role ◽  
Electron Detector ◽  
System A ◽  
Novel Approach

Abstract Secondary electron detector (SED) plays a vital role in a focused ion beam (FIB) system. A successful circuit edit requires a good effective detector. Novel approach is presented in this paper to improve the performance of such a detector, making circuit altering for the most advanced integrated circuit (IC) possible.

Electrical Characterization of Different Failure Modes in Sub-100 nm Devices Using Nanoprobing Technique

2009 ◽  
Author(s):  
E. Hendarto ◽  
S.L. Toh ◽  
J. Sudijono ◽  
P.K. Tan ◽  
H. Tan ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Focused Ion Beam ◽  
Failure Modes ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Nickel Silicide ◽  
Fault Isolation ◽  
Technology Nodes ◽  
Scanning Electron

Abstract The scanning electron microscope (SEM) based nanoprobing technique has established itself as an indispensable failure analysis (FA) technique as technology nodes continue to shrink according to Moore's Law. Although it has its share of disadvantages, SEM-based nanoprobing is often preferred because of its advantages over other FA techniques such as focused ion beam in fault isolation. This paper presents the effectiveness of the nanoprobing technique in isolating nanoscale defects in three different cases in sub-100 nm devices: soft-fail defect caused by asymmetrical nickel silicide (NiSi) formation, hard-fail defect caused by abnormal NiSi formation leading to contact-poly short, and isolation of resistive contact in a large electrical test structure. Results suggest that the SEM based nanoprobing technique is particularly useful in identifying causes of soft-fails and plays a very important role in investigating the cause of hard-fails and improving device yield.

Sign in / Sign up

Export Citation Format

Share Document