Design and Calibration of Resistive Stress Sensors on 4H Silicon Carbide

Author(s):  
Richard C. Jaeger ◽  
Jun Chen ◽  
Jeffrey C. Suhling ◽  
Leonid Fursin

Stress sensors have shown potential to provide “health monitoring” of a wide range of issues related to packaging of integrated circuits, and silicon carbide offers the advantage of much higher temperature sensor operation with application in packaged high-voltage, high-power SiC devices as well as both automotive and aerospace systems, geothermal plants, and deep well drilling, to name a few. This paper discusses the theory and uniaxial calibration of resistive stress sensors on 4H silicon carbide (4H-SiC) and provides new theoretical descriptions for four-element resistor rosettes and van der Pauw (VDP) stress sensors. The results delineate the similarities and differences relative to those on (100) silicon: resistors on the silicon face of 4H-SiC respond to only four of the six components of the stress state; a four-element rosette design exists for measuring the in-plane stress components; two stress quantities can be measured in a temperature compensated manner. In contrast to silicon, only one combined coefficient is required for temperature compensated stress measurements. Calibration results from a single VDP device can be used to calculate the basic lateral and transverse piezoresistance coefficients for 4H-SiC material. Experimental results are presented for lateral and transverse piezoresistive coefficients for van der Pauw structures and p- and n-type resistors. The VDP devices exhibit the expected 3.16 times higher stress sensitivity than standard resistor rosettes.

2014 ◽  
Vol 136 (4) ◽  
Author(s):  
Richard C. Jaeger ◽  
Mohammad Motalab ◽  
Safina Hussain ◽  
Jeffrey C. Suhling

Under the proper orientations and excitations, the transverse output of rotationally symmetric four-contact van der Pauw (VDP) stress sensors depends upon only the in-plane shear stress or the difference of the in-plane normal stresses on (100) silicon. In bridge-mode, each sensor requires only one four-wire measurement and produces an output voltage with a sensitivity that is 3.16 times that of the equivalent resistor rosettes or bridges, just as in the normal VDP sensor mode that requires two separate measurements. Both numerical and experimental results are presented to validate the conjectured behavior of the sensor. Similar results apply to sensors on (111) silicon. The output voltage results provide a simple mathematical expression for the offset voltage in Hall effect devices or the response of pseudo Hall-effect sensors. Bridge operation facilitates use of the VDP structure in embedded stress sensors in integrated circuits.


2015 ◽  
Vol 821-823 ◽  
pp. 859-862 ◽  
Author(s):  
E. Ramsay ◽  
James Breeze ◽  
David T. Clark ◽  
A. Murphy ◽  
D. Smith ◽  
...  

This paper presents the characteristics and performance of a range of Silicon Carbide (SiC) CMOS integrated circuits fabricated using a process designed to operate at temperatures of 300°C and above. The properties of Silicon carbide enable both n-channel and p-channel MOSFETS to operate at temperatures above 400°C [1] and we are developing a CMOS process to exploit this capability [4]. The operation of these transistors and other integrated circuit elements such as resistors and contacts is presented across a temperature range of room temperature to +400°C. We have designed and fabricated a wide range of test and demonstrator circuits. A set of six simple logic parts, such as a quad NAND and NOR gates, have been stressed at 300°C for extended times and performance results such as propagation delay drive levels, threshold levels and current consumption versus stress time are presented. Other circuit implementations, with increased logic complexity, such as a pulse width modulator, a configurable timer and others have also been designed, fabricated and tested. The low leakage characteristics of SiC has allowed the implementation of a very low leakage analogue multiplexer showing less than 0.5uA channel leakage at 400°C. Another circuit implemented in SiC CMOS demonstrates the ability to drive SiC power switching devices. The ability of CMOS to provide an active pull up and active pull down current can provide the charging and discharging current required to drive a power MOSFET switch in less than 100ns. Being implemented in CMOS, the gate drive buffer benefits from having no direct current path from the power rails, except during switching events. This lowers the driver power dissipation. By including multiple current paths through independently switched transistors, the gate drive buffer circuit can provide a high switching current and then a lower sustaining current as required to minimize power dissipation when driving a bipolar switch.


2018 ◽  
Vol 15 (4) ◽  
pp. 163-170 ◽  
Author(s):  
Philip G. Neudeck ◽  
David J. Spry ◽  
Michael J. Krasowski ◽  
Norman F. Prokop ◽  
Glenn M. Beheim ◽  
...  

Abstract This work describes recent progress in the design, processing, and testing of significantly up-scaled complex 500°C–durable 4H-SiC junction field effect transistor (JFET) integrated circuit (IC) technology with two-level interconnect undergoing development at NASA Glenn Research Center. For the first time, stable electrical operation of semiconductor ICs for more than 1 y at 500°C in an air atmosphere is reported. These groundbreaking durability results were attained on two-level interconnect JFET demonstration ICs with 175 or more transistors on each chip. This corresponds to a more than 7-fold increase in 500°C–durable circuit complexity from the 24-transistor ring oscillator ICs reported at HiTEC 2016. These results advance the technology foundation for realizing long-term durable 500°C ICs with increased functional capability for combustion engine sensing and control, planetary exploration, deep-well drilling monitoring, and other harsh-environment applications.


2016 ◽  
Vol 2016 (HiTEC) ◽  
pp. 000249-000256 ◽  
Author(s):  
David J. Spry ◽  
Philip G. Neudeck ◽  
Liang-Yu Chen ◽  
Dorothy Lukco ◽  
Carl W. Chang ◽  
...  

Abstract This work reports fabrication and testing of integrated circuits (ICs) with two levels of interconnect that consistently achieve greater than 1000 hours of stable electrical operation at 500 °C in air ambient. These ICs are based on 4H-SiC junction field effect transistor (JFET) technology that integrates hafnium ohmic contacts with TaSi2 interconnects and SiO2 and Si3N4 dielectric layers over ~ 1-μm scale vertical topology. Following initial burn-in, important circuit parameters remain stable for more than 1000 hours of 500 °C operational testing. These results advance the technology foundation for realizing long-term durable 500 °C ICs with increased functional capability for sensing and control combustion engine, planetary, deep-well drilling, and other harsh-environment applications.


2018 ◽  
Vol 2018 (HiTEC) ◽  
pp. 000071-000078 ◽  
Author(s):  
Philip G. Neudeck ◽  
David J. Spry ◽  
Michael J. Krasowski ◽  
Norman F. Prokop ◽  
Glenn M. Beheim ◽  
...  

Abstract This work describes recent progress in the design, processing, and testing of significantly up-scaled 500 °C durable 4H-SiC junction field effect transistor (JFET) integrated circuit (IC) technology with two-level interconnect undergoing development at NASA Glenn Research Center. For the first time, stable electrical operation of semiconductor ICs for over one year at 500 °C in air atmosphere is reported. These groundbreaking durability results were attained on two-level interconnect JFET demonstration ICs with 175 or more transistors on each chip. This corresponds to a more than 7-fold increase in 500 °C-durable circuit complexity from the 24 transistor ring oscillator ICs reported at HiTEC 2016 [1]. These results advance the technology foundation for realizing long-term durable 500 °C ICs with increased functional capability for combustion engine sensing and control, planetary exploration, deep-well drilling monitoring, and other harsh-environment applications.


Author(s):  
E.D. Wolf

Most microelectronics devices and circuits operate faster, consume less power, execute more functions and cost less per circuit function when the feature-sizes internal to the devices and circuits are made smaller. This is part of the stimulus for the Very High-Speed Integrated Circuits (VHSIC) program. There is also a need for smaller, more sensitive sensors in a wide range of disciplines that includes electrochemistry, neurophysiology and ultra-high pressure solid state research. There is often fundamental new science (and sometimes new technology) to be revealed (and used) when a basic parameter such as size is extended to new dimensions, as is evident at the two extremes of smallness and largeness, high energy particle physics and cosmology, respectively. However, there is also a very important intermediate domain of size that spans from the diameter of a small cluster of atoms up to near one micrometer which may also have just as profound effects on society as “big” physics.


Author(s):  
V. C. Kannan ◽  
A. K. Singh ◽  
R. B. Irwin ◽  
S. Chittipeddi ◽  
F. D. Nkansah ◽  
...  

Titanium nitride (TiN) films have historically been used as diffusion barrier between silicon and aluminum, as an adhesion layer for tungsten deposition and as an interconnect material etc. Recently, the role of TiN films as contact barriers in very large scale silicon integrated circuits (VLSI) has been extensively studied. TiN films have resistivities on the order of 20μ Ω-cm which is much lower than that of titanium (nearly 66μ Ω-cm). Deposited TiN films show resistivities which vary from 20 to 100μ Ω-cm depending upon the type of deposition and process conditions. TiNx is known to have a NaCl type crystal structure for a wide range of compositions. Change in color from metallic luster to gold reflects the stabilization of the TiNx (FCC) phase over the close packed Ti(N) hexagonal phase. It was found that TiN (1:1) ideal composition with the FCC (NaCl-type) structure gives the best electrical property.


1913 ◽  
Vol 17 (2) ◽  
pp. 117-131
Author(s):  
Hans Zinsser

The experiments recorded in this paper confirm the observations of Friedberger that acutely toxic bodies can be produced from typhoid bacilli by the action of sensitizer and complement and that, when small quantities of bacteria are used, an excess of sensitization either interferes with the formation of the poisons or leads to a cleavage of the bacterial proteid beyond the poisonous intermediate products spoken of as anaphylatoxins. Unlike the experience of other workers with poisons of this nature, however, our experiments have shown that the action of complement upon typhoid bacilli strongly sensitized or not at all sensitized may be carried on, at body temperature, for considerably longer than twelve hours without leading to a destruction of the poisons, and that this is true when the quantities of the bacteria used vary within the wide range of from one to twelve agar slants. It has been found, in fact, that in the case of this microorganism prolonged exposure at the higher temperature of considerable quantities of bacteria constitutes an unfailing method of regularly obtaining powerful poisons. The results obtained by the use of smaller quantities and the less vigorous complement action at low temperatures are far less regular or satisfactory. It would appear from this that complement action of considerable vigor is required to obtain from this bacillus any appreciable yield of anaphylatoxin, and that the poison, once formed, is not as unstable as that found in other microorganisms by Neufeld and Dold and others. In fact, although we have never observed complete lysis in vitro of the typhoid bacilli treated with antibody and complement, the sensitized bacteria exposed to the action of complement for as long as fifteen hours at 37.5° C. showed, in our experiments, much disintegration, and yet powerful poisons were present. Were the influence of lysis or of the too vigorous action of the serum bodies as rapidly poison-destroying in the case of this bacillus as it has been shown to be in the case of some other bacteria, it would be hard to understand how anaphylatoxins could play any part in the toxemia of typhoid fever. This phase of our experiments, however, seems to indicate that the conditions prevailing in the infected body at the height of this disease would furnish ideal criteria for anaphylatoxin production, since, in such cases, vigorously sensitized bacilli, in large numbers, are under the prolonged influence of considerable quantities of complement, conditions exactly comparable to those prevailing in our experiments. Granted that this state of affairs is actually the case, then the subsidence of the disease might depend merely upon limitation of the supply of antigen, as the increasing bactericidal action of the blood constituents come into play, and upon the consequent diminution of the anaphylatoxin. For as the bacteria diminish and the sensitizer increases, a changed proportion between them is established which, finally, as experiment has shown, results in a failure of anaphylatoxin production. For although our experiments have shown that, within a wide latitude of relative proportions of bacteria and antibody, anaphylatoxin can be formed, beyond this range an excess of one or the other element eventually will prevent their formation. It is not, however, the purpose of this paper to discuss the mechanism of the subsidence of the disease since this phase of the work will necessitate further experimental study. In regard to the experiments with kaolin, we were unable to confirm the contention of Keysser and Wassermann, though it is more than likely that toxic bodies could be formed by the action of complement upon any foreign proteid rendered amenable to its action. We are not inclined to attribute too much importance to these negative results, recording them merely as they occurred. However, should it be found subsequently that anaphylatoxins can be formed in this way, it seems unlikely that they are formed from the sensitizer or amboceptor as matrix, since this was not specifically adsorbed out of concentrated serum by the kaolin in our experiments. On the basis of experiments with so called endotoxins, ,we feel that the existence of such preformed intracellular poisons as an element in typhoid toxemia has not been proved, and is not absolutely necessary for the explanation of the phenomena occurring in this disease. However, the diarrhea, the hemorrhagic lesions, and the protracted symptoms following the injection of extracts and filtrates of the bacillus, differing so strikingly from the acute illness with rapid death or equally rapid recovery resulting from anaphylatoxin poisoning, would justify the assumption that poisons of this nature may still play a part in the disease, adding an additional specific characteristic to the clinical picture. As stated before, however, it is not improbable that all these characteristics may represent merely a more protracted or subacute state of anaphylatoxin toxemia. The experiments with autolysates, although none of them were fatal in their results upon guinea pigs, have sufficiently indicated that poisons comparable to anaphylatoxins can be formed in this way. This would indicate that a reaction of proteolysis, which may take place slowly by autolysis, is hastened by the action of complement, and its velocity is still further augmented by the increase, within certain limits, of the sensitization,—a conception which would attribute to the combined action of complement and sensitizer a function not incomparable to that of the bodies spoken of as catalytic agents.


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