Fabrication of a GaAs Microwave Probe Used for Atomic Force Microscope
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Au Film
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In order to develop a new structure microwave probe, the fabrication of AFM probe on the GaAs wafer was studied. A waveguide was introduced by evaporating Au film on the top and bottom surfaces of the GaAs AFM probe. A tip having 7 μm high, 2.0 aspect ratio was formed. The dimensions of the cantilever are 250×30×15 μm. The open structure of the waveguide at the tip of the probe was obtained by using FIB fabrication. AFM topographies of a grating sample were measured by using the fabricated GaAs microwave probe and commercial Si AFM probe. The fabricated probe was found having similar capability as the commercial one.
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2003 ◽
Vol 21
(3)
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pp. 1176
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2014 ◽
Vol 35
(5)
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pp. 567-574
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2009 ◽
Vol 131
(6)
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2006 ◽
Vol 315-316
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pp. 758-761
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