Fabrication of the Tip of GaAs Microwave Probe by Wet Etching

2005 ◽  
Author(s):  
Yang Ju ◽  
Hiroyuki Sato ◽  
Hitoshi Soyama
Keyword(s):  
Aspect Ratio ◽  
Wet Etching ◽  
Experimental Result ◽  
Wafer Surface ◽  
Curvature Radius ◽  
Gaas Wafer ◽  
Etching Mask ◽  
Afm Probe ◽  
Microwave Probe ◽  
Atom Force Microscope

In order to develop a new structure microwave probe, the fabrication of micro tip on the GaAs wafer surface was studied. The effects of the shape, direction, and size of etching mask to the fabricated tip were discussed in details. By finding the most suitable etching conditions, a tip having 7 μm high, 1.4 aspect ratio, and 50 nm curvature radius was formed. The experimental result indicates that the tip having the similar capability to sense the surface topography of materials as that of commercial atom force microscope (AFM) probe.

Fabrication of a GaAs Microwave Probe Used for Atomic Force Microscope

2007 ◽  
Author(s):  
Yang Ju ◽  
Tetsuya Kobayashi ◽  
Hitoshi Soyama
Keyword(s):  
Aspect Ratio ◽  
Atomic Force Microscope ◽  
Open Structure ◽  
Au Film ◽  
Gaas Wafer ◽  
Atomic Force ◽  
Afm Probe ◽  
Microwave Probe

In order to develop a new structure microwave probe, the fabrication of AFM probe on the GaAs wafer was studied. A waveguide was introduced by evaporating Au film on the top and bottom surfaces of the GaAs AFM probe. A tip having 7 μm high, 2.0 aspect ratio was formed. The dimensions of the cantilever are 250×30×15 μm. The open structure of the waveguide at the tip of the probe was obtained by using FIB fabrication. AFM topographies of a grating sample were measured by using the fabricated GaAs microwave probe and commercial Si AFM probe. The fabricated probe was found having similar capability as the commercial one.

Optimization of the Tip of Microwave AFM Probe

2009 ◽  
Author(s):  
Yang Ju ◽  
Motohiro Hamada ◽  
Atsushi Hosoi ◽  
Akifumi Fujimoto
Keyword(s):  
Metal Film ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Curvature Radius ◽  
Signal To Noise ◽  
Au Film ◽  
Gaas Wafer ◽  
Atomic Force ◽  
Afm Probe ◽  
Microwave Probe

In order to develop a new structure microwave probe, the fabrication of the atomic force microscope (AFM) probe on a GaAs wafer was studied. The fabricated probe had a tip of 8 μm high and curvature radius approximately 30 nm. The dimensions of the cantilever are 250 × 30 × 15 μm. A waveguide was introduced by evaporating Au film on the top and bottom surfaces of the GaAs AFM probe. The open structure of the waveguide at the tip of the probe was introduced by using focused ion beam (FIB) fabrication. To improve the resolution of AFM measurement, only the metal film was removed at the end of the probe tip. AFM topography of a grating sample was measured by the fabricated probe. As a result, it was found that the resolution of AFM measurement and the ratio of signal to noise were enhanced.

Manufacture of High Aspect Ratio Bulk Titanium Micro-Parts by Inductively Coupled Plasma Etching

2008 ◽  
Author(s):  
Gang Zhao ◽  
Qiong Shu ◽  
Yue Li ◽  
Jing Chen
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Inductively Coupled Plasma ◽  
Etching Rate ◽  
Sidewall Roughness ◽  
Inductively Coupled ◽  
Icp Etching ◽  
Novel Technology ◽  
Micro Parts ◽  
Etching Mask

A novel technology is developed to fabricate high aspect ratio bulk titanium micro-parts by inductively coupled plasma (ICP) etching. An optimized etching rate of 0.9 μm/min has been achieved with an aspect ratio higher than 10:1. For the first time, SU-8 is used as titanium etching mask instead of the traditional hard mask such as TiO2 or SiO2. With an effective selectivity of 3 and a spun-on thickness beyond 100 μm, vertical etching sidewall and low sidewall roughness are obtained. Ultra-deep titanium etching up to 200 μm has been realized, which is among the best of the present reports. Titanium micro-springs and planks are successfully fabricated with this approach.

Using High Aspect Ratio AFM Probe for Digital Twin Development of SiC FEA

2021 ◽  
Author(s):  
Konstantin Nikiforov ◽  
Nikolay Egorov ◽  
Ivan Sokolov ◽  
Valery Strebko ◽  
Vladimir Mikhailovskiy ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Digital Twin ◽  
Afm Probe

scholarly journals Inertial focusing in a parallelogram profiled microchannel over a range of aspect ratios

2019 ◽  
Vol 7 (1) ◽  
Author(s):  
Joo Young Kwon ◽  
Dong-Ki Lee ◽  
Jungwoo Kim ◽  
Young Hak Cho
Keyword(s):  
Aspect Ratio ◽  
Cfd Simulation ◽  
Rectangular Cross Section ◽  
Wet Etching ◽  
Pdms Mold ◽  
Rectangular Microchannel ◽  
Inertial Focusing ◽  
Particle Focusing ◽  
Aspect Ratios ◽  
Si Wafer

AbstractIn this study, particle focusing phenomena are studied in parallelogram and rectangular cross-sectioned microchannels of varying aspect ratio. In contrast to prior work the microchannels were fabricated using anisotropic wet etching of a Si wafer, plasma bonding, and self-alignment between the Si channel and the PDMS mold. It is shown that the inertial focusing points of the fabricated microchannels of parallelogram and rectangular cross-section were modified as the aspect ratio of the microchannels changed. The particle focusing points of the parallelogram profiled microchannel are compared with those of the rectangular microchannel through experimental measurements and CFD simulation. It is shown that particles can be efficiently focused and separated at a relatively low Reynolds number using a parallelogram profiled microchannel with a low aspect ratio.

Topology Optimization of Micromachined Structures With the Manufacturing Constraints of KOH Etching of (110) Silicon

2008 ◽  
Author(s):  
Sudarshan Hegde ◽  
G. K. Ananthasuresh
Keyword(s):  
Topology Optimization ◽  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Cost Effective ◽  
Wet Etching ◽  
Minimum Length ◽  
The Cost ◽  
Design Parameterization ◽  
Koh Etching ◽  
Si Wafer

The focus of this paper is on designing useful compliant micro-mechanisms of high-aspect-ratio which can be microfabricated by the cost-effective wet etching of (110) orientation silicon (Si) wafers. Wet etching of (110) Si imposes constraints on the geometry of the realized mechanisms because it allows only etch-through in the form of slots parallel to the wafer’s flat with a certain minimum length. In this paper, we incorporate this constraint in the topology optimization and obtain compliant designs that meet the specifications on the desired motion for given input forces. Using this design technique and wet etching, we show that we can realize high-aspect-ratio compliant micro-mechanisms. For a (110) Si wafer of 250 μm thickness, the minimum length of the etch opening to get a slot is found to be 866 μm. The minimum achievable width of the slot is limited by the resolution of the lithography process and this can be a very small value. This is studied by conducting trials with different mask layouts on a (110) Si wafer. These constraints are taken care of by using a suitable design parameterization rather than by imposing the constraints explicitly. Topology optimization, as is well known, gives designs using only the essential design specifications. In this work, we show that our technique also gives manufacturable mechanism designs along with lithography mask layouts. Some designs obtained are transferred to lithography masks and mechanisms are fabricated on (110) Si wafers.

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