Optimization of the Tip of Microwave AFM Probe

2009 ◽  
Author(s):  
Yang Ju ◽  
Motohiro Hamada ◽  
Atsushi Hosoi ◽  
Akifumi Fujimoto
Keyword(s):  
Metal Film ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Curvature Radius ◽  
Signal To Noise ◽  
Au Film ◽  
Gaas Wafer ◽  
Atomic Force ◽  
Afm Probe ◽  
Microwave Probe

In order to develop a new structure microwave probe, the fabrication of the atomic force microscope (AFM) probe on a GaAs wafer was studied. The fabricated probe had a tip of 8 μm high and curvature radius approximately 30 nm. The dimensions of the cantilever are 250 × 30 × 15 μm. A waveguide was introduced by evaporating Au film on the top and bottom surfaces of the GaAs AFM probe. The open structure of the waveguide at the tip of the probe was introduced by using focused ion beam (FIB) fabrication. To improve the resolution of AFM measurement, only the metal film was removed at the end of the probe tip. AFM topography of a grating sample was measured by the fabricated probe. As a result, it was found that the resolution of AFM measurement and the ratio of signal to noise were enhanced.

Fabrication of a GaAs Microwave Probe Used for Atomic Force Microscope

2007 ◽  
Author(s):  
Yang Ju ◽  
Tetsuya Kobayashi ◽  
Hitoshi Soyama
Keyword(s):  
Aspect Ratio ◽  
Atomic Force Microscope ◽  
Open Structure ◽  
Au Film ◽  
Gaas Wafer ◽  
Atomic Force ◽  
Afm Probe ◽  
Microwave Probe

In order to develop a new structure microwave probe, the fabrication of AFM probe on the GaAs wafer was studied. A waveguide was introduced by evaporating Au film on the top and bottom surfaces of the GaAs AFM probe. A tip having 7 μm high, 2.0 aspect ratio was formed. The dimensions of the cantilever are 250×30×15 μm. The open structure of the waveguide at the tip of the probe was obtained by using FIB fabrication. AFM topographies of a grating sample were measured by using the fabricated GaAs microwave probe and commercial Si AFM probe. The fabricated probe was found having similar capability as the commercial one.

Fabrication of Coaxial and Triaxial Atomic Force Microscope Imaging Probes

2014 ◽  
Vol 1712 ◽  
Author(s):  
Keith A. Brown ◽  
Robert M. Westervelt
Keyword(s):  
Atomic Force Microscope ◽  
Physical Vapor Deposition ◽  
Focused Ion Beam ◽  
Imaging Techniques ◽  
Ion Beam ◽  
Atomic Force ◽  
Imaging Probes ◽  
Microscope Imaging ◽  
Afm Probe ◽  
General Method

ABSTRACTHerein, we detail the fabrication of atomic force microscope (AFM) probes that have two and three coaxial electrodes at their tips. This fabrication strategy leverages the availability of conductive AFM probes and encompasses a general method for processing their complex and delicate structure through the deposition of insulating and conductive layers by shadow masked chemical and physical vapor deposition, respectively. Focused ion beam milling is used to expose the two electrode (coaxial) or three electrode (triaxial) structures at the tip of the AFM probe. Finally, we discuss new imaging modalities enabled by these probes including electrically-driven contact resonance imaging for nanoscale mechanical characterization, imaging the local dielectric constant by quantifying the dielectrophoretic force, and trapping functional particles at the tip of a probe using dielectrophoresis. These imaging techniques illustrate the generality and utility of this fabrication approach and suggest that such probes could be widely applied to image many nanoscale materials.

Fabrication of the Tip of GaAs Microwave Probe by Wet Etching

2005 ◽  
Author(s):  
Yang Ju ◽  
Hiroyuki Sato ◽  
Hitoshi Soyama
Keyword(s):  
Aspect Ratio ◽  
Wet Etching ◽  
Experimental Result ◽  
Wafer Surface ◽  
Curvature Radius ◽  
Gaas Wafer ◽  
Etching Mask ◽  
Afm Probe ◽  
Microwave Probe ◽  
Atom Force Microscope

In order to develop a new structure microwave probe, the fabrication of micro tip on the GaAs wafer surface was studied. The effects of the shape, direction, and size of etching mask to the fabricated tip were discussed in details. By finding the most suitable etching conditions, a tip having 7 μm high, 1.4 aspect ratio, and 50 nm curvature radius was formed. The experimental result indicates that the tip having the similar capability to sense the surface topography of materials as that of commercial atom force microscope (AFM) probe.

An Study of Influence of Imperfections on the Delamination of Diamond-Like Carbon Films

2002 ◽  
Vol 719 ◽  
Author(s):  
Myoung-Woon Moon ◽  
Kyang-Ryel Lee ◽  
Jin-Won Chung ◽  
Kyu Hwan Oh
Keyword(s):  
Cross Sections ◽  
Focused Ion Beam ◽  
Imaging System ◽  
Ion Beam ◽  
Carbon Films ◽  
Diamond Like Carbon ◽  
Glass Substrates ◽  
Atomic Force ◽  
Initiation And Propagation

AbstractThe role of imperfections on the initiation and propagation of interface delaminations in compressed thin films has been analyzed using experiments with diamond-like carbon (DLC) films deposited onto glass substrates. The surface topologies and interface separations have been characterized by using the Atomic Force Microscope (AFM) and the Focused Ion Beam (FIB) imaging system. The lengths and amplitudes of numerous imperfections have been measured by AFM and the interface separations characterized on cross sections made with the FIB. Chemical analysis of several sites, performed using Auger Electron Spectroscopy (AES), has revealed the origin of the imperfections. The incidence of buckles has been correlated with the imperfection length.

Focused Ion Beam (FIB) Method for Reconditioning Worn Tungsten Atomic Force Probe (AFP) Tips

2005 ◽  
Author(s):  
Randal E. Mulder ◽  
Sam Subramanian ◽  
Tony Chrastecky
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Minimal Amount ◽  
Atomic Force ◽  
Focus Ion Beam

Abstract Atomic force probing (AFP) uses very sharp tungsten tips (100nm in radius) which wear out rather quickly, even with the greater durability of tungsten as compared to silicon. This paper demonstrates how worn tips that no longer image and probe properly can be reconditioned using the focus ion beam (FIB) tool. The method works best for tips that are under approx. 750nm in diameter and are not bent. It works well for freshly manufactured tips that do not work properly due to mishandling or improper storage which allowed particulates/oxide to build up on the tip. The method also works well for fresh tips that have been worn down (or slightly bent) after several hours of scanning and probing. This method is straightforward and requires a minimal amount of time. Typically, four probe tips can be reconditioned in about 30 minutes on the FIB.

Extending AFM Phase Image of Nanocomposite Structures to 3D using FIB

2012 ◽  
Vol 1421 ◽  
Author(s):  
Russell J. Bailey ◽  
Remco Geurts ◽  
Debbie J. Stokes ◽  
Frank de Jong ◽  
Asa H. Barber
Keyword(s):  
Phase Contrast ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Polymer Nanocomposite ◽  
Three Dimensions ◽  
Phase Image ◽  
Force Microscopy ◽  
Atomic Force ◽  
Mechanical Information ◽  
Nanocomposite Structures

ABSTRACTThe mechanical behavior of nanocomposites is critically dependent on their structural composition. In this paper we use Focused Ion Beam (FIB) microscopy to prepare surfaces from a layered polymer nanocomposite for investigation using phase contrast atomic force microscopy (AFM). Phase contrast AFM provides mechanical information on the surface examined and, by combining with the sequential cross-sectioning of FIB, can extend the phase contract AFM into three dimensions.

Fabrication of Ga-templates Using a Focused Ion Beam

2009 ◽  
Vol 1228 ◽  
Author(s):  
Hao Wang ◽  
Greg C. Hartman ◽  
Joshua Williams ◽  
Jennifer L. Gray
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Processing Conditions ◽  
New Materials ◽  
Force Microscopy ◽  
Atomic Force ◽  
Nitridation Process ◽  
Microscopy Characterization ◽  
Device Technology

AbstractThere are many factors that have the potential to limit significant advances in device technology. These include the ability to arrange materials at shrinking dimensions and the ability to successfully integrate new materials with better properties or new functionalities. To overcome these limitations, the development of advanced processing methods that can organize various combinations of materials at nano-scale dimensions with the necessary quality and reliability is required. We have explored using a gallium focused ion beam (FIB) as a method of integrating highly mismatched materials with silicon by creating template patterns directly on Si with nanoscale resolution. These templates are potentially useful as a means of locally controlling topography at nanoscale dimensions or as a means of locally implanting Ga at specific surface sites. We have annealed these templates in vacuum to study the effects of ion dosage on local Ga concentration and topography. We have also investigated the feasibility of creating Ga nanodots using this method that could eventually be converted to GaN through a nitridation process. Atomic force microscopy and electron microscopy characterization of the resulting structures are shown for a variety of patterning and processing conditions.

scholarly journals Micromachining of Free-Standing Metal Film Pipe Using a Focused Ion Beam.

1996 ◽  
Vol 62 (601) ◽  
pp. 3706-3711
Author(s):  
Yoshihiro MORI ◽  
Hitoshi TOKURA ◽  
Masanori YOSHIKAWA
Keyword(s):  
Metal Film ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Free Standing

Study of Electrochemical Deposition of Copper and Microstructure Evolution in Fine Lines

1999 ◽  
Vol 562 ◽  
Author(s):  
Stephan Grunow ◽  
Deda Diatezua ◽  
Soon-Cheon Seo ◽  
Timothy Stoner ◽  
Alain E. KaloyerosI
Keyword(s):  
Electrochemical Deposition ◽  
Microstructure Evolution ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Process Window ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Underlying Mechanisms ◽  
Pure Cu

ABSTRACTAs computer chip technologies evolve from aluminum-based metallization schemes to their copper-based counterparts, Electrochemical Deposition (ECD) is emerging as a viable deposition technique for copper (Cu) interconnects. This paper presents the results of a first-pass study to examine the underlying mechanisms that control ECD Cu nucleation, growth kinetics, and post-deposition microstructure evolution (self-annealing), leading to the development and optimization of an ECD Cu process recipe for sub-quarter-micron device generations. The influence of bath composition, current waveform, type and texture of Cu seed layer, and device feature size (scaling effect) on the evolution of film texture, morphology, electrical properties, and fill characteristics was investigated using a manufacturing-worthy ReynoldsTech 8″ wafer plating tool. Resulting films were analyzed by X-ray Diffraction (XRD), four-point resistivity probe, Focused-Ion-Beam Scanning Electron Microscopy (FIB-SEM), and Atomic Force Microscopy (AFM). These investigations identified an optimized process window for the complete fill of aggressive device structures with pure Cu with resistivity ∼ 2.0 μΩ-cm and smooth surface morphology.

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