Effects of Thermal Lids Gold Plating Thickness on Thermal Interface Reliability for Flip Chip Packaging

2007 ◽  
Author(s):  
Chin Hock Toh ◽  
Arun Raman ◽  
Thomas Fitzgerald ◽  
Madhuri Narkhede ◽  
Alfred A. La Mar ◽  
...  
Keyword(s):  
Solder Joint ◽  
Flip Chip ◽  
Temperature Cycling ◽  
Thermal Interface Material ◽  
Thermal Impedance ◽  
Thermal Reliability ◽  
Gold Plating ◽  
Thermal Interface ◽  
Density Values ◽  
Flip Chip Packaging

This paper summarizes the intermetallic compounds (IMC) formation at the interface between thermal interface material (TIM) and nickel/gold plated integrated heat spreader (IHS) at varying Au thickness, and its impact on thermal reliability. Indium solders due to their high thermal conductivity are commonly used as the TIM to dissipate heat from silicon die to the thermal lids for new generation microprocessors with higher operating die temperatures. Indium solders readily wet the Au plating on thermal lids to form IMC during soldering. Optimal Au thickness is essential; Au thickness should be thick enough for reliable soldering, but must also be thin enough to offset the high cost and to prevent formation of a brittle Au-rich IMC layer in the solder joint. AuIn2 is the preferred IMC for indium-gold soldering and does not embrittle the solder joint. Resulting IMC type depends on the Au:In ratio which can be predicted by a In-Au binary phase diagram. On this basis, critical Au plating thickness to form AuIn2 IMC can be estimated using the known density values for electroplated gold and indium. In this study, Au thicknesses ranging from 0.035 to 0.2μm with a fixed gold pad size were electrolytically plated on a nickel plated copper lid. Assembled units were then subjected to Temperature Cycling-B (TCB). An in-house developed metrology for measuring junction-to-case thermal impedance (Rjc) is described. In this study, varying the thermal lids Au-plating thickness between 0.035 to 0.2 μm only lead to slight increase in center and corner Rjc values through 115 cycles TCB. The maximum center Rjc degradation post thermal cycling observed was only ∼ 1.7% on the lids with Au pad thickness between 0.035 – 0.04 μm. There were also no clear indications of impact of Au pad thickness on center and corner Rjc performance at EOL or post 115 cycles TCB. Thermal lids/TIM interface integrity remains unchanged for the range of Au pad thickness considered. However, detailed scanning electron microscopy and energy dispersive spectroscopy showed thicker Au plating results in greater incidence of AuIn2 IMC nodules beneath In-Ni-Au ternary IMC layer at end of line (EOL) ie post packaging and test. AuIn2 IMC is formed right after assembly and is what that holds the solder to the lid. As such, it follows that the presence of a more continuous and possibly greater number of AuIn2 IMC nodules can be expected to provide a better lid-solder joint at EOL.

Thermal Interface Material Technology Advancements and Challenges: An Overview

2005 ◽  
Author(s):  
Ashay Dani ◽  
James C. Matayabas ◽  
Paul Koning
Keyword(s):  
Flip Chip ◽  
Phase Change Materials ◽  
Heat Dissipation ◽  
Low Cost ◽  
Thermal Interface Material ◽  
Next Generation ◽  
Material Technology ◽  
Thermal Interface ◽  
Flip Chip Packaging ◽  
Architecture And Design

With an increase in the number of transistors (higher power), shrinking processor size (smaller die), and increasing clock speeds (higher frequency) for next generation microprocessors, heat dissipation at the silicon die level has become a critical focus area for microprocessor architecture and design. In addition, power removal at low cost continues to remain the key challenge as we develop the next generation packaging technologies. Novel Thermal Interface Materials (TIM) are required to be designed and developed to meet these new package thermal targets. This paper presents an overview of the novel TIM technologies developed at Intel including greases, phase change materials (PCM), gels, polymer solder hybrids, and solder TIM for multiple generations of desktop, server and mobile microprocessors. The advantages and limitations of these TIM technologies in the thermal management of flip chip packaging are reviewed for Intel’s microprocessors.

Evaluation of Bare Die Chip Reliability Due to Underfill Materials During Mechanical Actuation and Thermal Cycling

2005 ◽  
Author(s):  
Arv Sinha
Keyword(s):  
Flip Chip ◽  
Coefficient Of Thermal Expansion ◽  
Bond Line ◽  
Thermal Interface Material ◽  
High Power Density ◽  
The Finite Element Method ◽  
Chip Design ◽  
Thermal Interface ◽  
Ball Grid Arrays ◽  
Mechanical Actuation

Use of underfill materials to encapsulate ball grid arrays (BGAs) or chip scale packages (CSPs) have become very important in increasing the reliability of area array packages [1]. Underfill enhances the reliability of flip-chip devices by distributing the thermo-mechanical stresses [2, 3]. These stresses are generated due to mechanical actuation and coefficient of thermal expansion mismatch (CTE) [3]. They are required due to high power density of the current chip design to achieve fine bond line at the thermal interface material in order to dissipate heat. In this paper, details of reliability assessment using the finite element method and actual test data will be presented and discussed.

Mechanical Modeling of a Solder Thermal Interface Material: Implications for Thermo-Mechanical Reliability

2005 ◽  
Author(s):  
Sankara J. Subramanian
Keyword(s):  
Failure Modes ◽  
Accelerated Testing ◽  
Thermal Interface Material ◽  
Thermal Interface Materials ◽  
Finite Element Models ◽  
Electronic Packages ◽  
Thermal Impedance ◽  
Thermal Interface ◽  
Service Conditions ◽  
Interface Materials

This paper addresses cracking in solder thermal interface materials (STIMs) used in electronic packages under accelerated testing or service conditions. Finite-element models of various packages have been built to study the deformation in the STIM through a few cycles of accelerated testing. Two commonly observed failure modes — center/off-center brittle interfacial cracking, and cohesive corner cracking — were looked at. The success of the modeling approach was evaluated by comparison with thermal impedance data, as well as with CSAM images showing the extent of cracking in the STIM. It is shown that the models agree qualitatively with experimental data, both in terms of failure locations, as well as in terms of rank ordering different packages in terms of STIM degradation.

Precise, high throughput dispensing of thermal interface material in BGA packaging applications

2016 ◽  
Vol 2016 (DPC) ◽  
pp. 001391-001412
Author(s):  
Hanzhuang Liang ◽  
Linh Rolland
Keyword(s):  
High Throughput ◽  
Flip Chip ◽  
Consumer Electronics ◽  
Thermal Interface Material ◽  
Production Lines ◽  
Heat Spreader ◽  
Heavy Load ◽  
Thermal Interface ◽  
Wide Range ◽  
Complicated Geometries

In a flip chip BGA package, thermal interface materials (TIMs) are applied for thermal management between the die and the heat spreader or between the heat spreader and the heat sink to conduct the heat generated in the die during component operation. Without a thermal interface, the die will overheat and the components will not function properly. Advanced microelectronics packaging demands high and dynamic standards of its supplier industries in relation to speed, precision and flexibility. For example, the demands on functionality, power density and performance of the components within a die are largely enhanced along with TIM requirements for higher heat resistance. Manufacturers are being asked to apply TIMs on more dies in more complicated geometries and to dispense them during any packaging process. This brings increased challenges for TIM dispensing equipment, such as the ability to handle abrasive and dry TIMs at a high throughput while maintaining precision and repeatability. A high-precision, high-throughput TIM dispensing process has been developed to fill the gap between the traditional slower dispensing of simple patterns and the challenges from emerging package designs. This process is being used in flip chip BGA production lines in package applications from consumer electronics to automotive products. These production lines are in full 24/7 operation with each dispensing system running at 240 units per hour (uph) for audio-video consumer electronics, 360 uph for CPUs/GPUs on smart phones and 750 uph for automobile control panels and computation servers. In this new dispensing system, the valve can be tightly controlled to achieve high dispensing accuracy at fast speeds. The dispense pattern and route can be modified at no cost, in minutes, and during any step in the design or the assembly stage. Shapes that can be dispensed include dots, lines, boxes and circles with fine height and edge definitions of 25micron and 45micron. The process can cover a wide range of pattern dimensions between 0.5mm and 100mm at flow rates of 30–370 mg/sec at a repeatability of 3–15% three sigma. Even TIM that has viscosity as high as 1500kcPs with a heavy load of large and coarse particles such as metals, ceramic and glass beads can be dispensed using this equipment and process. New equipment and processes are under development to further push the limit on higher throughput and precision, increased flexibility and material dispensability.

Finite element analysis of lidded flip-chip packages: A study on the impact of thermal interface material compressibility and stress-free conditions on modeling predictions

2015 ◽  
Vol 2015 (1) ◽  
pp. 000151-000156
Author(s):  
Tuhin Sinha
Keyword(s):  
Flip Chip ◽  
Image Correlation ◽  
Thermal Interface Material ◽  
Element Analysis ◽  
Thermal Interface ◽  
Strong Function ◽  
Linear Elastic ◽  
Fea Modeling ◽  
Predicted Values ◽  
The Impact

In this paper, we present the effects of assumptions made about the constitutive behavior of a cured, silicone gel type thermal interface material (TIM) and the package stress-free conditions on FEA modeling predictions. The focus will be on the deformations (or warpage) predicted by the models for lidded flip-chip packages. It is critical for such warpage predictions to be close to experimental measurements for accurate projection of mechanical stresses and strains in a package. Digital Image Correlation (DIC) warpage measurements on flip-chip modules are compared against the predicted values and the impact of above-mentioned assumptions will be discussed. It will be shown that the TIM mechanical and thereby, thermal degradation is a strong function of the TIM compressibility and stress-free condition assumptions. Bounds of non-linear elastic modeling technique for the TIM and guidelines for conducting numerical analysis for lidded flip-chip packages will be provided.

Effect of temperature cycling on reliability of flip chip solder joint

2014 ◽  
Author(s):  
Xueming Jiang ◽  
Pengrong Lin ◽  
Yuezhong Song ◽  
Yingzhuo Huang ◽  
Binhao Lian ◽  
...  
Keyword(s):  
Solder Joint ◽  
Flip Chip ◽  
Temperature Cycling ◽  
Effect Of Temperature

Flip Chip Packaging of Wafer Level Encapsulated RF MEMS Tunable Capacitors

2013 ◽  
Author(s):  
Shawn J. Cunningham ◽  
Yvonne Heng ◽  
Nabeel Idrisi ◽  
Brad Nelson ◽  
John McKillop
Keyword(s):  
Flip Chip ◽  
Solder Bump ◽  
Rf Mems ◽  
Temperature Cycling ◽  
Battery Life ◽  
Mems Devices ◽  
Wafer Level ◽  
Element Analysis ◽  
Tunable Capacitors ◽  
Flip Chip Packaging

Wireless handheld communications has identified significant benefits of tuning that include fewer dropped calls, increased battery life and improved user experience. The tuning can be part of the antenna, power amplifier (PA), filtering, or part of a fully integrated radio front end (FE). RF MEMS tunable capacitors have been integrated with 0.18 μm RF HVCMOS to address the need for tuning in wireless communications. These integrated, MEMS tunable capacitors are hermetically encapsulated at the wafer level, but the integrity of the encapsulation must be maintained during BEOL operations. The BEOL operations include shipping and handling, passivation coat and cure, solder bumping (screen printed or electroplated), backside grinding (BSG), dicing, and pick and place. In this paper we will describe, the flip chip packaging of the wafer level encapsulated MEMS devices including finite element analysis. The flip chip packaging of ASIC die is primarily concerned with solder bump reliability during such qualification stresses as temperature cycling and drop testing. The flip chip packaging of a wafer level encapsulated MEMS device has additional concerns that include encapsulation integrity and device package sensitivity. The die thickness, underfill, and encapsulation dimension have been varied to minimize the deflection and stress associated with the encapsulation. The primary failure mode associated with the overstress of the encapsulation is a cracked lid that will lead to the ingress of moisture and a rise in the cavity pressure from to atmospheric conditions. The failure can be detected by an increase in the MEMS switching time and frequency response or by a return to zero failure (RTZ) associated with device stiction. A low modulus and low CTE UF has been implemented for the lowest deflection and stress. The lowest deflection and stress is provided by eliminating the UF, but this is not feasible for the purpose of solder bump reliability. In practice, the MEMS encapsulation is robust to the printed solder bumping process that includes placement and removal of the bump screen and the squeegee of solder past into the solder screen. The MEMS encapsulation is robust to the attachment and removal of BSG tape and the pressures associated with BSG. The final dicing operation has not demonstrated any detrimental impact on the MEMS encapsulation. The final demonstration of success is the assembly of the MEMS tunable capacitor die to a laminate substrate using lead-free solder and underfill.

Optimization of a Flux-Less Metal Thermal Interface Material by Reflow in a Vacuum Furnace

2011 ◽  
Vol 2011 (1) ◽  
pp. 000929-000937
Author(s):  
Pierino I Zappella ◽  
Paul W Barnes ◽  
David Muhs ◽  
Bruce Wilson
Keyword(s):  
Flip Chip ◽  
Pure Metal ◽  
Bond Line ◽  
Thermal Interface Material ◽  
Vacuum Furnace ◽  
Acceptance Criteria ◽  
Specific Sequence ◽  
Thermal Interface ◽  
Series Of Experiments ◽  
Initial Objective

This paper describes the work performed with a pure metal thermal interface material (TIM) for the sole purpose to improve the transfer of heat from the die to the metal cover case. A flux-less reflow process is employed in order to reflow the indium TIM material. This operation is performed in a vacuum furnace utilizing heat, vacuum, and pressure in a specific sequence in order to wet the metal lid and the backside of the flip chip die. The initial objective was to demonstrate minimal voiding of the TIM and subsequently limited flow out of molten solder from and along the sides of the die. A series of experiments were employed where acceptance criteria is evaluated by a) X-Ray, b) scanning acoustical microscopy (SAM), and c) cross-section. Acceptance criteria consists of 1) indium wetting of both lid to indium interface and indium to silicon interface die, 2) indium bond line (BLT) thickness, 3) lid tilt, and 4) lid shear strength. Acceptance is determined after a subsequent 4X ball grid array (BGA) reflow in a conventional belt reflow furnace with minimal voiding, no popcorn or blistering of the laminate substrate, and TIM thickness and solder flow out at sides of the die within the acceptable limits of the above mentioned criteria.

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