Optimization-Based Network Identification for Thermal Transient Measurements

Network identification by deconvolution is a proven method for determining the thermal structure function of a given device. The method allows to derive the thermal capacitances as well as the resistances of a one-dimensional thermal path from the thermal step response of the device. However, the results of this method are significantly affected by noise in the measured data, which is unavoidable to a certain extent. In this paper, a post-processing procedure for network identification from thermal transient measurements is presented. This so-called optimization-based network identification provides a much more accurate and robust result compared to approaches using Fourier or Bayesian deconvolution in combination with Foster-to-Cauer transformation. The thermal structure function obtained from network identification by deconvolution is improved by repeatedly solving the inverse problem in a multi-dimensional optimization process. The result is a non-diverging thermal structure function, which agrees well with the measured thermal impedance. In addition, the associated time constant spectrum can be calculated very accurately. This work shows the potential of inverse optimization approaches for network identification.

Multi-material topology optimization of large-displacement compliant mechanisms considering material-dependent boundary condition

Multi-material compliant mechanisms design enables potential design possibilities by exploiting the advantages of different materials. To satisfy mechanical/thermal impedance matching requirements, a method for multi-material topology optimization of large-displacement compliant mechanisms considering material-dependent boundary condition is presented in this study. In the optimization model, the element stacking method is employed to describe the material distribution and handle material-dependent boundary condition. The maximization of the output displacement of the compliant mechanism is developed as the objective function and the structural volume of each material is the constraint. Fictitious domain approach is applied to circumvent the numerical instabilities in topology optimization problem with geometrical nonlinearities. The method of moving asymptotes is applied to solve the optimization problem. Several numerical examples are presented to demonstrate the validity of the proposed method. The optimal topologies of the compliant mechanisms obtained by the proposed method can satisfy the specified material-dependent boundary condition.

The Influence of Soldering Profile on the Thermal Parameters of Insulated Gate Bipolar Transistors (IGBTs)

The effect of solder joint fabrication on the thermal properties of IGBTs soldered onto glass-epoxy substrate (FR4) was investigated. Glass-epoxy substrates with a thickness of 1.50 mm, covered with a 35 μm thick Cu layer, were used. A surface finish was prepared from a hot air leveling (HAL) Sn99Cu0.7Ag0.3 layer with a thickness of 1 ÷ 40 μm. IGBT transistors NGB8207BN were soldered with SACX0307 (Sn99Ag0.3Cu0.7) paste. The samples were soldered in different soldering ovens and at different temperature profiles. The thermal impedance Zth(t) and thermal resistance Rthof the samples were measured. Microstructural and voids analyses were performed. It was found that the differences for different samples reached 15% and 20% for Zth(t) and Rth, respectively. Although the ratio of the gas voids in the solder joints varied between 3% and 30%, no correlation between the void ratios and Rth increase was found. In the case of the different soldering technologies, the microstructure of the solder joint showed significant differences in the thickness of the intermetallic compounds (IMC) layer; these differences correlated well with the time above liquidus during the soldering process. The thermal parameters of IGBTs could be changed due to the increased thermal conductivity of the IMC layer as compared to the thermal conductivity of the solder bulk. Our research highlighted the importance of the soldering technology used and the thermal profile in the case of the assembly of IGBT components.

SiC-MOSFET or Si-IGBT: Comparison of Design and Key Characteristics of a 690 V Grid-Tied Industrial Two-Level Voltage Source Converter

In this paper, a design driven comparison between two 190 kVA industrial three-phase two-level voltage source converter (2L-VSC) designs based in silicon carbide (SiC) and silicon (Si) for 690 V grids is presented. These two designs were conceived to have the same nominal power, while switching at reasonable switching speeds and requiring the same case to ambient thermal impedance. Under these conditions, the designs were studied to detect the potential gains and limitations that a pragmatic converter design could feature when using these two technologies regarding cost, efficiency, size and weight. To achieve this, experimentally determined semiconductor characteristics were used to perform simulations, the results of which were then used to design the essential parts of the converter. These designed parts were then corroborated with manufacturers, from which physical characteristics of all designed components were obtained. The results show that the SiC based design presents substantial weight savings and an 11% system cost reduction, while preserving its traditional characteristics such as improved overall efficiency when compared to the silicon based design under the given design requirements and constraints.