RF MEMS electrostatically actuated tunable capacitors and their applications: a review

This paper reviews the recent developments of micro-electromechanical system (MEMS) based electrostatically actuated tunable capacitors. MEMS based tunable capacitors (MBTCs) are important building blocks in advanced radio frequency communication systems and portable electronics. This is due to their excellent performance compared to solid state counterpart. Different designs, tuning mechanisms, and performance parameters of MBTCs are discussed, compared, and summarized. Several quantitative comparisons in terms of tuning range, quality factor (Q factor), and electrodes configurations are presented, which provide deep insight into different design studies, assists in selecting designs, and layouts that best suit various applications. We also highlight recent modern applications of tunable capacitors, such as mobile handsets, internet of things, communication sensors, and 5G antennas. Finally, the paper discusses different design approaches and proposes guidelines for performance improvement.

A MEMS Tunable Capacitor With Dual Deformation Modes and High Tunability and Linearity

MEMS tunable capacitors have applications in tunable filters and RF circuits where high tunability and Q-factor are desired. Conventional parallel-plate tunable capacitors have a highly nonlinear capacitance-voltage (C-V) response and limited tunability of up to 50% due to fundamental limitation and structural instability. In this work, we present a novel design idea for a parallel-plate tunable capacitor that increases the tuning ratio and provides a smoother (more linear) response. The design uses two modes of deformation, rigid-body displacement of a curved moving electrode before pull-in and deforming the plate after pull-in, and exploits nonlinear structural stiffness to improve the linearity (and the tunability) of the tunable parallel-plate capacitor. The capacitor structure is designed such that when actuation voltage is applied, first the beams holding the moving electrode deform, and capacitance increase similar to conventional design up to pull-in. After the pull-in, the top electrode (which has a curved geometry) is deformed and further increases the capacitance, as the voltage increases. The design may provide an overall simulated tunability of more than 380%, and also has a more linear C-V response. The design is modeled and simulated using ANSYS coupled-field multiphysics solver and the effect of different design parameters are investigated. The simulation results show much high tunability and better linearity than conventional parallel-plate capacitors.

Novel RF MEMS tunable capacitors

Current tunable devices such as filters, impedance matching networks and oscillators have problems that degrade their performance at high microwave frequencies. Tuning ratios and quality factors are the major problems associated with semiconductor based tuning components. This thesis presents the design, fabrication and testing of two novel RF MEMS tunable capacitors. The first tunable capacitor is designed using electrostatic repulsive-force actuators which produce an upward movement of the moving plate of a tunable capacitor. The repulsive-force actuator is free of pull-in effect and capable of reaching large displacement. Gap increasing tunable capacitors with areas of 162μm×220μm and 300μm×302μm are developed using electrostatic repulsive-force actuators. The capacitances are calculated using simulations and maximum tuning ratios of 438.5% and 230% are obtained for a parallel and inclined plate designs, respectively, with capacitance-voltage linearity of 96.28% and 95.14%, respectively, in the presence of RF voltage. The second tunable capacitor is developed using residual stress gradient based vertical comb-drive actuator. Conventional vertical comb-drive actuators need two vertical comb fingers, i.e., one for the fixed and one for the moving comb. MetalMUMPs process provides a 20μm thick nickel layer which is subject to residual stress gradient along its thickness. Using the residual stress gradient two curve-up beams are devised to bend out of plane and upward. A moving plate is connected between the middles of the curve-up beams through supporting springs and is raised above the substrate. The moving fingers are connected to opposite sides of the moving plate. The fixed comb-drive fingers are anchored to the substrate. When a voltage is applied, the moving fingers move down towards the fixed fingers. As a result, the capacitance between the moving fingers and the fixed fingers change. Prototypes are fabricated to verify the working principles of this novel actuator using the MetalMUMPs process. Tunable capacitors based on this actuator are experimentally analyzed. Quality factors of 106.9-162.7 at 0.8GHz and 42.4-51.9 at 1.24GHz are obtained over actuation voltage of 0-100V. An optimal design of the tunable capacitors achieved a tuning ratio of 194.4% at 162.5V with linearity of 97.84%

Novel RF MEMS tunable capacitors

Current tunable devices such as filters, impedance matching networks and oscillators have problems that degrade their performance at high microwave frequencies. Tuning ratios and quality factors are the major problems associated with semiconductor based tuning components. This thesis presents the design, fabrication and testing of two novel RF MEMS tunable capacitors. The first tunable capacitor is designed using electrostatic repulsive-force actuators which produce an upward movement of the moving plate of a tunable capacitor. The repulsive-force actuator is free of pull-in effect and capable of reaching large displacement. Gap increasing tunable capacitors with areas of 162μm×220μm and 300μm×302μm are developed using electrostatic repulsive-force actuators. The capacitances are calculated using simulations and maximum tuning ratios of 438.5% and 230% are obtained for a parallel and inclined plate designs, respectively, with capacitance-voltage linearity of 96.28% and 95.14%, respectively, in the presence of RF voltage. The second tunable capacitor is developed using residual stress gradient based vertical comb-drive actuator. Conventional vertical comb-drive actuators need two vertical comb fingers, i.e., one for the fixed and one for the moving comb. MetalMUMPs process provides a 20μm thick nickel layer which is subject to residual stress gradient along its thickness. Using the residual stress gradient two curve-up beams are devised to bend out of plane and upward. A moving plate is connected between the middles of the curve-up beams through supporting springs and is raised above the substrate. The moving fingers are connected to opposite sides of the moving plate. The fixed comb-drive fingers are anchored to the substrate. When a voltage is applied, the moving fingers move down towards the fixed fingers. As a result, the capacitance between the moving fingers and the fixed fingers change. Prototypes are fabricated to verify the working principles of this novel actuator using the MetalMUMPs process. Tunable capacitors based on this actuator are experimentally analyzed. Quality factors of 106.9-162.7 at 0.8GHz and 42.4-51.9 at 1.24GHz are obtained over actuation voltage of 0-100V. An optimal design of the tunable capacitors achieved a tuning ratio of 194.4% at 162.5V with linearity of 97.84%

Interface Combinatorial Pulsed Laser Deposition to Enhance Heterostructures Functional Properties

In this chapter we will describe a new development of combinatorial pulsed laser deposition (CPLD) which targets the exploration of interface libraries. The idea is to modulate continuously the composition of interfaces on a few atomic layers in order to alter their functional properties. This unique combinatorial synthesis of interfaces is possible due to very specific PLD characteristics. The first one is its well-known ability for complex oxide stoichiometry transfer from the target to the film. The second one is the layer by layer control of thin film growth at the atomic level using in-situ RHEED characterization. The third one relates to the directionality of the ablated plume which allows for selective area deposition on the substrate using a mobile shadow-mask. However PLD also has some limitations and important PLD aspects to be considered for reliable CPLD are reviewed. Multiple examples regarding the control of interface magnetism in magnetic tunnel junctions and energy band and Schottky barrier height tuning in ferroelectric tunable capacitors are presented.

High-k Polymer Nanocomposite Materials for Technological Applications

Understanding the properties of small molecules or monomers is decidedly important. The efforts of synthetic chemists and material engineers must be appreciated because of their knowledge of how utilize the properties of synthetic fragments in constructing long-chain macromolecules. Scientists active in this area of macromolecular science have shared their knowledge of catalysts, monomers and a variety of designed nanoparticles in synthetic techniques that create all sorts of nanocomposite polymer stuffs. Such materials are now an integral part of the contemporary world. Polymer nanocomposites with high dielectric constant (high-k) properties are widely applicable in the technological sectors including gate dielectrics, actuators, infrared detectors, tunable capacitors, electro optic devices, organic field-effect transistors (OFETs), and sensors. In this short colloquy, we provided an overview of a few remarkable high-k polymer nanocomposites of material science interest from recent decades.