26 kbit Two Transistor Low Voltage/Low Power NOR Charge Trapping Flash Memory with HfSiON and TiN Metal gate

2008 ◽  
Author(s):  
D. S. Golubovic ◽  
M. J. van Duuren ◽  
M. Boutchich ◽  
N. Akil
Keyword(s):  
Low Power ◽  
Flash Memory ◽  
Low Voltage ◽  
Charge Trapping ◽  
Metal Gate ◽  
Tin Metal

High-speed and low-voltage performance in a charge-trapping flash memory using a NiO tunnel junction

2011 ◽  
Vol 44 (15) ◽  
pp. 155105 ◽  
Author(s):  
Yujeong Seo ◽  
Ho-Myoung An ◽  
Hee-Dong Kim ◽  
In Rok Hwang ◽  
Sa Hwan Hong ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Flash Memory ◽  
High Speed ◽  
Low Voltage ◽  
Charge Trapping ◽  
Voltage Performance ◽  
A Charge

Analysis of nitride storage non-volatile memories with HfSiOx blocking dielectric and TiN metal gate for low power embedded applications

2009 ◽  
Vol 86 (10) ◽  
pp. 1999-2004 ◽  
Author(s):  
Dušan S. Golubović ◽  
Michiel J. van Duuren ◽  
Nader Akil ◽  
Antonio Arreghini ◽  
Francesco Driussi
Keyword(s):  
Low Power ◽  
Metal Gate ◽  
Tin Metal ◽  
Embedded Applications

Correction to ZnO/NiO Diode-Based Charge Trapping Layer for Flash Memory Featuring Low Voltage Operation

2015 ◽  
Vol 7 (18) ◽  
pp. 10067-10067
Author(s):  
Chergn-En Sun ◽  
Chin-Yu Chen ◽  
Ka-Lip Chu ◽  
Yung-Shao Shen ◽  
Chia-Chun Lin ◽  
...  
Keyword(s):  
Flash Memory ◽  
Low Voltage ◽  
Charge Trapping ◽  
Low Voltage Operation

Crucial integration of high work-function metal gate and high-k blocking oxide on charge-trapping type flash memory device

2008 ◽  
Vol 93 (25) ◽  
pp. 252902 ◽  
Author(s):  
Ping-Hung Tsai ◽  
Kuei-Shu Chang-Liao ◽  
Dong-Wei Yang ◽  
Yuan-Bin Chung ◽  
Tien-Ko Wang ◽  
...  
Keyword(s):  
Work Function ◽  
Flash Memory ◽  
Charge Trapping ◽  
Memory Device ◽  
Metal Gate ◽  
High Work Function ◽  
High K ◽  
High Work

scholarly journals Toward Low-Power Flash Memory: Prospect of Adopting Crystalline Oxide as Charge Trapping Layer

2016 ◽  
Vol 4 (5) ◽  
pp. 335-346 ◽  
Author(s):  
Kuen-Yi Chen ◽  
Shih-Chieh Teng ◽  
Hui-Hsin Chang ◽  
Yung-Hsien Wu
Keyword(s):  
Low Power ◽  
Flash Memory ◽  
Charge Trapping ◽  
Crystalline Oxide

ZnO/NiO Diode-Based Charge-Trapping Layer for Flash Memory Featuring Low-Voltage Operation

2015 ◽  
Vol 7 (12) ◽  
pp. 6383-6390 ◽  
Author(s):  
Chergn-En Sun ◽  
Chin-Yu Chen ◽  
Ka-Lip Chu ◽  
Yung-Shao Shen ◽  
Chia-Chun Lin ◽  
...  
Keyword(s):  
Flash Memory ◽  
Low Voltage ◽  
Charge Trapping ◽  
Low Voltage Operation
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