Low-Power Wordline Voltage Generator for Low-Voltage Flash Memory

2006 ◽  
Author(s):  
Tzu-Ming Wang ◽  
Ming-Dou Ker ◽  
Steve Yeh ◽  
Ya-Chun Chang
Keyword(s):  
Low Power ◽  
Flash Memory ◽  
Low Voltage ◽  
Voltage Generator

LaAlO3 as tunnel dielectric for low-voltage and low-power p-channel flash memory free of drain disturb

2006 ◽  
Vol 50 (2) ◽  
pp. 276-281 ◽  
Author(s):  
Yimao Cai ◽  
Ru Huang ◽  
Xiaonan Shan ◽  
Falong Zhou ◽  
Yan Li ◽  
...  
Keyword(s):  
Low Power ◽  
Flash Memory ◽  
Low Voltage

Analysis of 6T SRAM Cell in Different Technologies

2017 ◽  
Vol MCSP2017 (01) ◽  
pp. 7-10 ◽  
Author(s):  
Subhashree Rath ◽  
Siba Kumar Panda
Keyword(s):  
Low Power ◽  
Data Storage ◽  
Low Voltage ◽  
Random Access ◽  
Storage Device ◽  
Cmos Process ◽  
Process Technology ◽  
Digital Devices ◽  
Noise Margin ◽  
Sram Cell

Static random access memory (SRAM) is an important component of embedded cache memory of handheld digital devices. SRAM has become major data storage device due to its large storage density and less time to access. Exponential growth of low power digital devices has raised the demand of low voltage low power SRAM. This paper presents design and implementation of 6T SRAM cell in 180 nm, 90 nm and 45 nm standard CMOS process technology. The simulation has been done in Cadence Virtuoso environment. The performance analysis of SRAM cell has been evaluated in terms of delay, power and static noise margin (SNM).

COMPOSITE TRANSISTOR CELL USING DYNAMIC BODY BIAS FOR HIGH GAIN AND LOW-VOLTAGE APPLICATIONS

2014 ◽  
Vol 23 (08) ◽  
pp. 1450108 ◽  
Author(s):  
VANDANA NIRANJAN ◽  
ASHWANI KUMAR ◽  
SHAIL BALA JAIN
Keyword(s):  
Low Power ◽  
Large Scale ◽  
Low Voltage ◽  
Supply Voltage ◽  
High Gain ◽  
Signal Frequency ◽  
Output Impedance ◽  
Self Cascode ◽  
Intrinsic Gain ◽  
Body Bias

In this work, a new composite transistor cell using dynamic body bias technique is proposed. This cell is based on self cascode topology. The key attractive feature of the proposed cell is that body effect is utilized to realize asymmetric threshold voltage self cascode structure. The proposed cell has nearly four times higher output impedance than its conventional version. Dynamic body bias technique increases the intrinsic gain of the proposed cell by 11.17 dB. Analytical formulation for output impedance and intrinsic gain parameters of the proposed cell has been derived using small signal analysis. The proposed cell can operate at low power supply voltage of 1 V and consumes merely 43.1 nW. PSpice simulation results using 180 nm CMOS technology from Taiwan Semiconductor Manufacturing Company (TSMC) are included to prove the unique results. The proposed cell could constitute an efficient analog Very Large Scale Integration (VLSI) cell library in the design of high gain analog integrated circuits and is particularly interesting for biomedical and instrumentation applications requiring low-voltage low-power operation capability where the processing signal frequency is very low.

scholarly journals A 0.3 V Rail-to-Rail Ultra-Low-Power OTA with Improved Bandwidth and Slew Rate

2021 ◽  
Vol 11 (2) ◽  
pp. 19
Author(s):  
Francesco Centurelli ◽  
Riccardo Della Sala ◽  
Pietro Monsurrò ◽  
Giuseppe Scotti ◽  
Alessandro Trifiletti
Keyword(s):  
Low Power ◽  
Low Voltage ◽  
Supply Voltage ◽  
Cmos Process ◽  
Slew Rate ◽  
Large Signal ◽  
Output Stage ◽  
Ultra Low Power ◽  
Input Stage ◽  
Rail To Rail

In this paper, we present a novel operational transconductance amplifier (OTA) topology based on a dual-path body-driven input stage that exploits a body-driven current mirror-active load and targets ultra-low-power (ULP) and ultra-low-voltage (ULV) applications, such as IoT or biomedical devices. The proposed OTA exhibits only one high-impedance node, and can therefore be compensated at the output stage, thus not requiring Miller compensation. The input stage ensures rail-to-rail input common-mode range, whereas the gate-driven output stage ensures both a high open-loop gain and an enhanced slew rate. The proposed amplifier was designed in an STMicroelectronics 130 nm CMOS process with a nominal supply voltage of only 0.3 V, and it achieved very good values for both the small-signal and large-signal Figures of Merit. Extensive PVT (process, supply voltage, and temperature) and mismatch simulations are reported to prove the robustness of the proposed amplifier.

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