Modeling gate and substrate currents due to conduction- and valence-band electron and hole tunneling [CMOS technology]

2002 ◽  
Author(s):  
Wen-Chin Lee ◽  
Chenming Hu
Keyword(s):  
Valence Band ◽  
Cmos Technology ◽  
Band Electron ◽  
Valence Band Electron

scholarly journals Excess Low-Frequency Noise in Ultrathin Oxide n-MOSFETs Arising From Valence-Band Electron Tunneling

2005 ◽  
Vol 52 (9) ◽  
pp. 2061-2066 ◽  
Author(s):  
J.-W. Wu ◽  
J.-W. You ◽  
H.-C. Ma ◽  
C.-C. Cheng ◽  
C.-F. Hsu ◽  
...  
Keyword(s):  
Valence Band ◽  
Electron Tunneling ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Band Electron ◽  
Ultrathin Oxide ◽  
Valence Band Electron

Orbital Angular Momentum of Iron Valence Band Electron Deduced by Photoelectron Stereography

2008 ◽  
Vol 77 (10) ◽  
pp. 103301 ◽  
Author(s):  
Kentaro Goto ◽  
Fumihiko Matsui ◽  
Tomohiro Matsushita ◽  
Yukako Kato ◽  
Hiroshi Daimon
Keyword(s):  
Angular Momentum ◽  
Valence Band ◽  
Orbital Angular Momentum ◽  
Band Electron ◽  
Iron Valence ◽  
Valence Band Electron

A Compact Model for Valence-Band Electron Tunneling Current in Partially Depleted SOI MOSFETs

2007 ◽  
Vol 54 (2) ◽  
pp. 316-322 ◽  
Author(s):  
W. Wu ◽  
Xin Li ◽  
G. Gildenblat ◽  
G.O. Workman ◽  
S. Veeraraghavan ◽  
...  
Keyword(s):  
Valence Band ◽  
Electron Tunneling ◽  
Tunneling Current ◽  
Compact Model ◽  
Band Electron ◽  
Valence Band Electron

Valence-band electron structure in polycrystalline cubic boron nitride sintered in shock waves

1993 ◽  
Vol 32 (7) ◽  
pp. 645-650 ◽  
Author(s):  
V. I. Kovtun ◽  
A. V. Petrenko ◽  
Ya. V. Zaulichnyi ◽  
V. I. Trefilov ◽  
V. F. Britun ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Shock Waves ◽  
Valence Band ◽  
Cubic Boron Nitride ◽  
Electron Structure ◽  
Band Electron ◽  
Polycrystalline Cubic Boron Nitride ◽  
Valence Band Electron
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