1999 57th Annual Device Research Conference Digest (Cat. No.99TH8393)
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Measurement of minority electron mobilities in SiGe base region of npn SiGe/Si heterojunction bipolar transistors

1999 57th Annual Device Research Conference Digest (Cat. No.99TH8393) ◽

10.1109/drc.1999.806366 ◽

2003 ◽

Author(s):

J.-S. Rieh ◽

P.K. Bhattacharya ◽

E.T. Croke

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Base Region

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Room temperature operation of a single electron switch with an electrically formed quantum dot

1999 57th Annual Device Research Conference Digest (Cat. No.99TH8393) ◽

10.1109/drc.1999.806347 ◽

2003 ◽

Author(s):

Dae Hwan Kim ◽

Dong-Hyuk Chae ◽

Jong Duk Lee ◽

Byung-Gook Park

Keyword(s):

Quantum Dot ◽

Room Temperature ◽

Single Electron ◽

Room Temperature Operation

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Organic semiconductor complementary logic circuits

1999 57th Annual Device Research Conference Digest (Cat. No.99TH8393) ◽

10.1109/drc.1999.806358 ◽

2003 ◽

Author(s):

Y.-Y. Lin ◽

A. Dodabalapur ◽

R. Sarpeshkar ◽

Z. Bao ◽

W. Li ◽

...

Keyword(s):

Organic Semiconductor ◽

Logic Circuits

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P-channel thin film transistor of microcrystalline silicon directly deposited at 320°C

1999 57th Annual Device Research Conference Digest (Cat. No.99TH8393) ◽

10.1109/drc.1999.806359 ◽

2003 ◽

Author(s):

Y. Chen ◽

K. Pangal ◽

J.C. Sturm ◽

S. Wagner

Keyword(s):

Thin Film ◽

Thin Film Transistor ◽

Microcrystalline Silicon

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4H-SiC continuous wave SITs

1999 57th Annual Device Research Conference Digest (Cat. No.99TH8393) ◽

10.1109/drc.1999.806339 ◽

2003 ◽

Author(s):

R.R. Siergiej ◽

R.J. Bojko ◽

R.C. Clarke ◽

W.R. Curtice

Keyword(s):

Continuous Wave

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Programming dynamics of a single electron memory cell with a high-density SiGe nanocrystal array at room temperature

1999 57th Annual Device Research Conference Digest (Cat. No.99TH8393) ◽

10.1109/drc.1999.806350 ◽

2003 ◽

Cited By ~ 2

Author(s):

Dong-Hyuk Chae ◽

Tae-Sik Yoon ◽

Dae Hwan Kim ◽

Jang-Yeon Kwon ◽

Ki-Bum Kim ◽

...

Keyword(s):

Room Temperature ◽

Memory Cell ◽

High Density ◽

Single Electron

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Visible and infrared electroluminescence from Er-doped GaN Schottky diodes

1999 57th Annual Device Research Conference Digest (Cat. No.99TH8393) ◽

10.1109/drc.1999.806372 ◽

2003 ◽

Author(s):

A.J. Steckl ◽

M. Garter ◽

R. Birkhahn

Keyword(s):

Schottky Diodes ◽

Er Doped

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Ultra-shallow junction technology by atomic layer doping from arsenic adsorbed layer

1999 57th Annual Device Research Conference Digest (Cat. No.99TH8393) ◽

10.1109/drc.1999.806331 ◽

2003 ◽

Author(s):

Y.H. Song ◽

J.C. Bea ◽

M. Oonishi ◽

T. Honda ◽

H. Kurino ◽

...

Keyword(s):

Adsorbed Layer ◽

Atomic Layer ◽

Shallow Junction

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Ridge-type InGaAs quantum wire field effect transistor with negative differential resistance

1999 57th Annual Device Research Conference Digest (Cat. No.99TH8393) ◽

10.1109/drc.1999.806326 ◽

2003 ◽

Author(s):

S.J. Kim ◽

T. Sugaya ◽

M. Ogura ◽

Y. Sugiyama ◽

K. Tomizawa

Keyword(s):

Quantum Wire ◽

Negative Differential Resistance ◽

Field Effect ◽

Field Effect Transistor ◽

Differential Resistance ◽

Effect Transistor

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Narrow channel MOSFET memory based on silicon nanocrystals and charge storage characteristics

1999 57th Annual Device Research Conference Digest (Cat. No.99TH8393) ◽

10.1109/drc.1999.806348 ◽

2003 ◽

Author(s):

Y. Shi ◽

X.L. Yuan ◽

S.L. Gu ◽

R. Zhang ◽

Y.D. Zheng ◽

...

Keyword(s):

Silicon Nanocrystals ◽

Narrow Channel ◽

Charge Storage ◽

Storage Characteristics

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1999 57th Annual Device Research Conference Digest (Cat. No.99TH8393)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Measurement of minority electron mobilities in SiGe base region of npn SiGe/Si heterojunction bipolar transistors

Room temperature operation of a single electron switch with an electrically formed quantum dot

Organic semiconductor complementary logic circuits

P-channel thin film transistor of microcrystalline silicon directly deposited at 320°C

4H-SiC continuous wave SITs

Programming dynamics of a single electron memory cell with a high-density SiGe nanocrystal array at room temperature

Visible and infrared electroluminescence from Er-doped GaN Schottky diodes

Ultra-shallow junction technology by atomic layer doping from arsenic adsorbed layer

Ridge-type InGaAs quantum wire field effect transistor with negative differential resistance

Narrow channel MOSFET memory based on silicon nanocrystals and charge storage characteristics

1999 57th Annual Device Research Conference Digest (Cat. No.99TH8393)
Latest Publications