Boron Diffusion in Fluorine Preamorphized Silicon During Rapid Thermal Annealing

1993 ◽  
Vol 303 ◽  
Author(s):  
H. Kinoshita ◽  
T. H. Huang ◽  
D. L. Kwong ◽  
P. E. Bakeman
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealed Sample ◽  
Transmission Electron Micrograph ◽  
Boron Diffusion ◽  
Cross Sectional ◽  
Dopant Activation ◽  
Enhanced Diffusion ◽  
Transmission Electron ◽  
Secondary Ion

ABSTRACTThe effect of fluorine preamorphization on boron diffusion and activation during rapid thermal annealing (RTA) has been investigated. Compared with low energy B or BF2 implant into crystalline Si, F preamorphization suppressed the transient enhanced diffusion of B and increased dopant activation. Results show that the tail diffusion was absent, and thus the junction depth of the RTA annealed sample was established by the as-implanted B profile. Secondary ion mass spectroscopy and cross-sectional transmission electron micrograph results show F accumulation near the surface and at end-of-range defects. The interaction of F with defects is believed to reduce the B diffusion during RTA.

Enhanced Boron Diffusion in Amorphous Silicon

2004 ◽  
Vol 810 ◽  
Author(s):  
J.M. Jacques ◽  
N. Burbure ◽  
K.S. Jones ◽  
M.E. Law ◽  
L.S. Robertson ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Room Temperature ◽  
Solid Phase ◽  
Amorphous Layer ◽  
Boron Diffusion ◽  
Cross Sectional ◽  
Enhanced Diffusion ◽  
Transmission Electron ◽  
Variable Angle Spectroscopic Ellipsometry ◽  
Secondary Ion

ABSTRACTIn prior works, we demonstrated the phenomenon of fluorine-enhanced boron diffusion within self-amorphized silicon. Present studies address the process dependencies of low temperature boron motion within ion implanted materials utilizing a germanium amorphization. Silicon wafers were preamorphized with either 60 keV or 80 keV Ge+ at a dose of 1×1015 atoms/cm2. Subsequent 500 eV, 1×1015 atoms/cm211B+ implants, as well as 6 keV F+ implants with doses ranging from 1×1014 atoms/cm2 to 5×1015 atoms/cm2 were also done. Furnace anneals were conducted at 550°C for 10 minutes under an inert N2 ambient. Secondary Ion Mass Spectroscopy (SIMS) was utilized to characterize the occurrence of boron diffusion within amorphous silicon at room temperature, as well as during the Solid Phase Epitaxial Regrowth (SPER) process. Amorphous layer depths were verified through Cross-Sectional Transmission Electron Microscopy (XTEM) and Variable Angle Spectroscopic Ellipsometry (VASE). Boron motion within as-implanted samples is observed at fluorine concentrations greater than 1×1020 atoms/cm3. The magnitude of the boron motion scales with increasing fluorine dose and concentration. During the initial stages of SPER, boron was observed to diffuse irrespective of the co-implanted fluorine dose. Fluorine enhanced diffusion at room temperature does not appear to follow the same process as the enhanced diffusion observed during the regrowth process.

Shallow Junction Formation in As-Implanted Si by Low-Temperature Rapid Thermal Annealing

1989 ◽  
Vol 147 ◽  
Author(s):  
M. K. El-Ghor ◽  
S. J. Pennycook ◽  
R. A. Zuhr
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Dislocation Loops ◽  
Cross Sectional ◽  
Dopant Activation ◽  
Transmission Electron ◽  
Shallow Junctions ◽  
Surface Image ◽  
Long Time ◽  
Short Time

AbstractShallow junctions were formed in single-crystal Si(100) by implantation of As at energies between 2 and 17.5 keV followed by conventional furnace annealing or by rapid thermal annealing (RTA). Cross-sectional transmission electron microscopy (XTEM) showed that defect-free shallow junctions could be formed at temperatures as low as 700 °C by RTA, with about 60% dopant activation. From a comparison of short-time and long-time annealing, it is proposed that surface image forces are responsible for the efficient removal of end-of-range (EOR) dislocation loops

Observation of the Wurtzite Phase in OMVPE Grown ZnSe/GaAs: Effect on Implantation and Rapid Thermal Annealing

1989 ◽  
Vol 147 ◽  
Author(s):  
K. S. Jones ◽  
J. Yu ◽  
P. D. Lowen ◽  
D. Kisker
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Electrical Transport ◽  
High Resistivity ◽  
Ion Milling ◽  
Electrical Transport Properties ◽  
Wurtzite Phase ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Diffraction Patterns

AbstractTransmission electron diffraction patterns of cross-sectional TEM samples of OMVPE ZnSe on GaAs indicate the existence of the hexagonal wurtzite phase in the epitaxial layers. The orientation relationship is (0002)//(111); (1120)//(220). Etching studies indicate the phase is internal not ion milling induced. The average wurtzite particle size is 80Å-120Å. Because of interplanar spacing matches it is easily overlooked. Electrical property measurements show a high resistivity (1010ω/square) which drops by four orders of magnitude upon rapid thermal annealing between 700°C and 900 °C for 3 sec. Implantation of Li and N have little effect on the electrical transport properties. The Li is shown to have a high diffusivity, a solid solubility of ≈1016/cm3 at 800°C and getters to the ZnSeA/aAs interface.

Low Temperature Dopant Activation Using Variable Frequency Microwave Annealing

2010 ◽  
Vol 1245 ◽  
Author(s):  
Terry L. Alford ◽  
Karthik Sivaramakrishnan ◽  
Anil Indluru ◽  
Iftikhar Ahmad ◽  
Bob Hubbard ◽  
...  
Keyword(s):  
Low Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Effective Means ◽  
Variable Frequency ◽  
Dopant Activation ◽  
Ion Channeling ◽  
Transmission Electron ◽  
Limited Diffusion ◽  
Ion Implanted

AbstractVariable frequency microwaves (VFM) and rapid thermal annealing (RTA) were used to activate ion implanted dopants and re-grow implant-damaged silicon. Four-point-probe measurements were used to determine the extent of dopant activation and revealed comparable resistivities for 30 seconds of RTA annealing at 900 °C and 6-9 minutes of VFM annealing at 540 °C. Ion channeling analysis spectra revealed that microwave heating removes the Si damage that results from arsenic ion implantation to an extent comparable to RTA. Cross-section transmission electron microscopy demonstrates that the silicon lattice regains nearly all of its crystallinity after microwave processing of arsenic implanted silicon. Secondary ion mass spectroscopy reveals limited diffusion of dopants in VFM processed samples when compared to rapid thermal annealing. Our results establish that VFM is an effective means of low-temperature dopant activation in ion-implanted Si.

Rapid Thermal Annealing of Composite TaSi2/n+ Poly-Si Silicide Films

1983 ◽  
Vol 23 ◽  
Author(s):  
D.L. Kwong ◽  
R. Kwor ◽  
B.Y. Tsaur ◽  
K. Daneshvar
Keyword(s):  
Electron Microscopy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealed Sample ◽  
Vlsi Circuits ◽  
X Ray Diffraction ◽  
Furnace Annealing ◽  
X Ray ◽  
Transmission Electron ◽  
Average Grain Size

ABSTRACTThe formation of composite TaSi2/n+ Poly-Si silicide films through the use of rapid thermal annealing (RTA) is investigated by x-ray diffraction, four point probe, scanning Auger microprobes (SAM) with ion sputter etching, transmission electron microscopy (TEM), scanning electron microscopy (SEM), and capacitance-voltage (C-V) measurements. 0.2 μm polysilicon is deposited on oxidized Si wafer by LPCVD and doped with phosphorus. A layer of 2200 A TaSix is then co-sputtered on polysilicon samples from separate targets. These as-deposited films are then annealed by RTA in an argon ambient for 1 sec. and 10 sec. at various temperatures. X-ray diffraction and SAM results show the rapid formation of a uniform stoichiometric tantalum disilicide via Si migration from polysilicon. TEM micrographs show simlilar results for samples annealed at 1000°C in furnace for 30 min. or by RTA for 1 sec., exhibiting average grain size greater than 1000 A. Sheet resistance of samples annealed by furnace annealing and RTA are comparable. SEM micrographs indicate that the surface morphology of the RTA-annealed sample is superior to that obtained by furnace annealing. These results show that RTA may offer a practical solution to low-resistivity silicide formation in VLSI circuits.

Rapid Thermal Annealing of Ion Implanted p-n Junction in Silicon

1985 ◽  
Vol 52 ◽  
Author(s):  
C. Ho ◽  
R. Kwor ◽  
C. Araujo ◽  
J. Gelpey
Keyword(s):  
Leakage Current ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Dwell Time ◽  
Annealing Temperature ◽  
Current Analysis ◽  
Junction Depth ◽  
Leakage Currents ◽  
Dopant Activation ◽  
Secondary Ion

ABSTRACTThe rapid thermal annealing (RTA) of p+n and n+p diodes, fabricated by the LOCOS process, and its subsequent effects on junction leakage current, junction depth and dopant activation were investigated. The reverse bias diode leakage currents of implanted Si <100> samples (As+: 60 KeY, 5×1014 5×1015 cm−2, B+: 25 KeV, l×1014, l×1015 cm−2 and BF2+: 45 KeV, 1×1015cm−2 ) were measured as functions of annealing temperature, and dwell time. The annealing was performed using an Eaton RTA system (Nova ROA-400) at temperatures ranging from 950 °C to 1150 °C. Annealing times ranged from 0.2 sec. to 10 sec. The results from the diode leakage current analysis are correlated with those from Secondary Ion Mass Spectroscopy (SIMS) and differential Hall measurements. The reverse-biased leakage currents from the RTA-treated samples are compared with those from furnace-annealed samples.

Influence of Rapid Thermal Annealing on Shallow BF2 Implantation into Pre-Amorphized Silicon

1983 ◽  
Vol 23 ◽  
Author(s):  
W. Maszara ◽  
C. Carter ◽  
D. K. Sadana ◽  
J. Liu ◽  
V. Ozguz ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ion Beam ◽  
Liquid Nitrogen Temperature ◽  
Structural Defects ◽  
Structural Quality ◽  
Halogen Lamp ◽  
Cross Sectional ◽  
Plan View ◽  
Transmission Electron

ABSTRACTLow energy, shallow BF2+ implants were carried out at room or liquid nitrogen temperature into deep pre-amorphized (100) Si for better control of the dopant profile and post-annealing structural defects. Cross sectional and angle polished plan view transmission electron microscopy were used to study the structural quality of the implanted layer, while SIMS provided a chemical profile. Four types of structural defects were observed in BF2+ implanted, pre-amorphized samples following rapid thermal annealing with a halogen lamp. An in-situ ion beam annealing and the presence of F in the Si lattice were related to the creation of the defects. Good correlations between F gettering and TEM observed defects were found to exist. Implantation of B+ into a pre-amorphized Si surface and subsequent rapid thermal annealing was found to produce a wide defect-free surface layer.

Reaction Kinetics of Sputter-Deposited Ti On SiO2 Substrates during Rapid Thermal Annealing

1989 ◽  
Vol 146 ◽  
Author(s):  
E.J. Yun ◽  
H.G. Chun ◽  
K. Jung ◽  
D.L. Kwong ◽  
S. Lee
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Sputter Deposited ◽  
Kinetics Of

ABSTRACTIn this paper, the interactions of sputter-deposited Ti on SiO2 substrates during rapid thermal annealing in nitrogen at 550°C - 900°C for 10 - 60 s have been systematically studied using X-ray diffraction, Auger electron spectroscopy, transmission electron diffraction, TEM & cross-sectional TEM, and sheet resistance measurements.

Solid-Phase Epitaxial Regrowth of Ion-Implanted Silicon on Sapphire Using Rapid Thermal Annealing

1984 ◽  
Vol 35 ◽  
Author(s):  
A M Hodge ◽  
A G Cullis ◽  
N G Chew
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Solid Phase ◽  
Silicon Film ◽  
Silicon On Insulator ◽  
Full Potential ◽  
Cross Sectional ◽  
Epitaxial Regrowth ◽  
Transmission Electron ◽  
Device Processing

ABSTRACTSolid phase epitaxial regrowth of silicon on sapphire is used to improve the quality of as-received silicon films prior to conventional device processing. It has been shown that this is necessary, especially for layers of 0.3μm and thinner, if the full potential of this particular silicon on insulator technology is to be realised. Si+ ions are implanted at an energy and dose such that all but the surface of the silicon film is rendered amorphous. In this study, the layer is regrown using a rapid thermal annealer operated in the multi-second regime. A second shallower implant followed by rapid thermal annealing produces a further improvement. Characterisation of the material has been principally by cross-sectional transmission electron microscopy. The structures observed after different implant and regrowth treatments are discussed.

Modeling of Boron Diffusion and Activation for Nonequilibrium Rapid Thermal Annealing Application

1993 ◽  
Vol 303 ◽  
Author(s):  
H. Kinoshita ◽  
T. H. Huang ◽  
D. L. Kwong
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
High Dose ◽  
Boron Diffusion ◽  
Defect Model ◽  
Extended Defect ◽  
Enhanced Diffusion ◽  
Wide Range ◽  
Simulation Results ◽  
Single Set

ABSTRACTThe diffusion and activation of ion implanted boron and BF2 during rapid thermal annealing (RTA) was modeled by considering the reaction kinetics between point defects and boron. The diffusion model uses the Monte Carlo generated point defect profiles, an extended defect model and a surface amorphization model for high dose BF2 implantation. Excellent simulation results have been achieved by using a single set of diffusion and kinetic parameters to model the enhanced diffusion of boron during RTA for a wide range of B and BF2 implant doses.

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