Multiple fault activation cycle tests for transistor stuck-open faults

2010 ◽  
Author(s):  
N. Devta-Prasanna ◽  
A. Gunda ◽  
S. M. Reddy ◽  
I. Pomeranz
Keyword(s):  
Multiple Fault ◽  
Fault Activation ◽  
Open Faults ◽  
Activation Cycle

Scan Tests with Multiple Fault Activation Cycles for Delay Faults

2006 ◽  
Author(s):  
Zhuo Zhang ◽  
S.M. Reddy ◽  
I. Pomeranz ◽  
Xijiang Lin ◽  
J. Rajski
Keyword(s):  
Delay Faults ◽  
Multiple Fault ◽  
Fault Activation

Magnetic Current Imaging Power Short Localization

2015 ◽  
Author(s):  
J. Gaudestad ◽  
F. Rusli ◽  
A. Orozco ◽  
M.C. Pun
Keyword(s):  
Thermal Imaging ◽  
Flip Chip ◽  
Optical Microscope ◽  
Fault Isolation ◽  
Magnetic Current ◽  
Multiple Fault ◽  
Defect Location ◽  
Isolation Techniques ◽  
Chip Sample

Abstract A Flip Chip sample failed short between power and ground. The reference unit had 418Ω and the failed unit with the short had 16.4Ω. Multiple fault isolation techniques were used in an attempt to find the failure with thermal imaging and Magnetic Current Imaging being the only techniques capable of localizing the defect. To physically verify the defect location, the die was detached from the substrate and a die cracked was seen using a visible optical microscope.

Fault Isolation of Open Defects Using Space Domain Reflectometry

2012 ◽  
Author(s):  
Mayue Xie ◽  
Zhiguo Qian ◽  
Mario Pacheco ◽  
Zhiyong Wang ◽  
Rajen Dias ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Fault Isolation ◽  
Nondestructive Technique ◽  
Space Domain ◽  
New Approach ◽  
Defect Localization ◽  
Open Faults ◽  
Open Defects ◽  
Application Optimization ◽  
Rf Magnetic Field

Abstract Recently, a new approach for isolation of open faults in integrated circuits (ICs) was developed. It is based on mapping the radio-frequency (RF) magnetic field produced by the defective part fed with RF probing current, giving the name to Space Domain Reflectometry (SDR). SDR is a non-contact and nondestructive technique to localize open defects in package substrates, interconnections and semiconductor devices. It provides 2D failure isolation capability with defect localization resolution down to 50 microns. It is also capable of scanning long traces in Si. This paper describes the principles of the SDR and its application for the localization of open and high resistance defects. It then discusses some analysis methods for application optimization, and gives examples of test samples as well as case studies from actual failures.

scholarly journals Reliability Improvement of a Radial Feeder Using Multiple Fault Passage Indicators

2012 ◽  
Vol 14 ◽  
pp. 223-228 ◽  
Author(s):  
E. Vidyasagar ◽  
P.V.N. Prasad ◽  
Ather Fatima
Keyword(s):  
Multiple Fault ◽  
Reliability Improvement

scholarly journals Analysis of insidious fault activation and water inrush from the mining floor

2014 ◽  
Vol 24 (4) ◽  
pp. 477-483 ◽  
Author(s):  
Xinyu Hu ◽  
Lianguo Wang ◽  
Yinlong Lu ◽  
Mei Yu
Keyword(s):  
Water Inrush ◽  
Fault Activation
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