Practical, non-invasive optical probing for flip-chip devices

2002 ◽  
Author(s):  
G. Dajee ◽  
N. Goldblatt ◽  
T. Lundquist ◽  
S. Kasapi ◽  
K. Wilsher
Keyword(s):  
Flip Chip ◽  
Non Invasive ◽  
Optical Probing

Laser Voltage Probe (LVP): A Novel Optical Probing Technology for Flip-Chip Packaged Microprocessors

2000 ◽  
Author(s):  
Wai Mun Yee ◽  
Mario Paniccia ◽  
Travis Eiles ◽  
Valluri Rao
Keyword(s):  
Integrated Circuits ◽  
High Frequency ◽  
Flip Chip ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Ir Laser ◽  
Timing Measurement ◽  
Optical Probing ◽  
Probe Hole ◽  
Silicon Debug

Abstract A novel optical probing technique to measure voltage waveforms from flip-chip packaged complementary metal-oxide-semiconductor (CMOS) integrated circuits (IC) is described. This infrared (IR) laser based technique allows signal waveform acquisition and high frequency timing measurement directly from active PN junctions through the silicon backside substrate on IC’s mounted in flip-chip, stand-alone, or multi-chip module packages as well as wire-bond packages on which the chip backside is accessible. The technique significantly improves silicon debug & failure analysis (FA) through-put time (TPT) as compared to backside electron-beam (E-beam) probing because of the elimination of backside trenching and probe hole generation operations.

Transparent Heat Spreader for Backside Optical Analysis of High Power GHz-Scale Microprocessors

2000 ◽  
Author(s):  
Travis M. Eiles ◽  
Dean Hunt ◽  
David Chi
Keyword(s):  
High Power ◽  
Integrated Circuit ◽  
Flip Chip ◽  
Cooling System ◽  
Heat Spreader ◽  
Standard Configuration ◽  
Degree Of Stability ◽  
Optical Probing ◽  
System Requirements ◽  
High Degree

Abstract Optical probing using the Schlumberger IDS-2000 and other infrared-based analysis techniques have proved to be critical in the debug and analysis of flip-chip-packaged microprocessors. During probing, processors are operating with test patterns that generate a large amount of power. This article demonstrates a method for dissipating the generated heat based on a diamond window-based transparent heat spreader. This method controls the microprocessor temperature to a high degree of stability, and reduces thermal gradients across the die. Waveform results are excellent, and the transparent heat spreader provides a path for optical probing to be applied to the entire range of integrated circuit applications. The discussion covers cooling system requirements, and standard configuration specifications, and shows how the transparent heat spreader technique is effective for probing high power microprocessors.

Novel optical probing and micromachining techniques for silicon debug of flip chip packaged microprocessors

1999 ◽  
Vol 46 (1-4) ◽  
pp. 27-34 ◽  
Author(s):  
Mario Paniccia ◽  
T. Eiles ◽  
R. Livengood ◽  
V.R.M. Rao ◽  
P. Winer ◽  
...  
Keyword(s):  
Flip Chip ◽  
Optical Probing ◽  
Silicon Debug

Assessment of XRF Technique as a Method to Measure Percent Ag in SnAg Solders for Flip Chip Applications

2012 ◽  
Vol 2012 (1) ◽  
pp. 000912-000922
Author(s):  
Jennifer D Schuler ◽  
Chia-Hsin Shih ◽  
Charles L Arvin ◽  
KyungMoon Kim ◽  
Eric Perfecto
Keyword(s):  
Cross Sections ◽  
Inductively Coupled Plasma ◽  
Flip Chip ◽  
Spatial Density ◽  
Wafer Level ◽  
Scanning Calorimetry ◽  
Electron Probe Micro Analyzer ◽  
Non Invasive ◽  
Area Of Interest ◽  
Scan Time

Pb-free SnAg solder has become the industry standard for fabricating flip chip interconnects utilizing C4 (controlled collapse chip connection) technology. One area of interest for manufacturability of Pb-free solders is the ability to control and measure the %Ag composition and its variation from wafer to wafer, chip to chip, and C4 to C4. There are various ways to measure solder composition. These are divided into two categories which are invasive and non-invasive referring to whether solder must be removed from the wafer in order to conduct the measurement. There are a variety of invasive methods including Atomic Absorption (AA), Differential Scanning Calorimetry (DSC), Inductively Coupled Plasma (ICP) and Electron Probe Micro-Analyzer (EPMA) used with cross sections. Non-invasive methods are limited, making the development of the non-invasive X-Ray Fluorescence (XRF) method an important technique to determine both the thickness and composition of C4s on wafers without modifying the wafer. There are many factors which can affect the accuracy of the XRF measurements. These include bump geometry, composition, UBM (under bump metallurgy) stack, bump spatial density, underlying chip wiring, tool vibration and tool parameters, such as collimator size, power levels, scan time, etc. This paper will address the implementation issues in utilizing XRF for Pb-free solder SnAg systems. The paper will describe:(1) Experimental bumping variables,(2) XRF configuration, calibration, optimized measuring methodology and the importance of having known standards with the same dimensions of the bumps being measured(3) Measuring accuracy and correlation with ICP and DSC,(4) Ag distribution study in the die and wafer level

X-ray microtomography

1988 ◽  
Vol 46 ◽  
pp. 998-999
Author(s):  
H.W. Deckman ◽  
B.F. Flannery ◽  
J.H. Dunsmuir ◽  
K.D' Amico
Keyword(s):  
Computed Tomography ◽  
Internal Structure ◽  
Imaging Technique ◽  
Three Dimensional ◽  
Tissue Structure ◽  
Individual Element ◽  
X Ray ◽  
Non Invasive ◽  
Panoramic Imaging ◽  
Three Dimensional Images

We have developed a new X-ray microscope which produces complete three dimensional images of samples. The microscope operates by performing X-ray tomography with unprecedented resolution. Tomography is a non-invasive imaging technique that creates maps of the internal structure of samples from measurement of the attenuation of penetrating radiation. As conventionally practiced in medical Computed Tomography (CT), radiologists produce maps of bone and tissue structure in several planar sections that reveal features with 1mm resolution and 1% contrast. Microtomography extends the capability of CT in several ways. First, the resolution which approaches one micron, is one thousand times higher than that of the medical CT. Second, our approach acquires and analyses the data in a panoramic imaging format that directly produces three-dimensional maps in a series of contiguous stacked planes. Typical maps available today consist of three hundred planar sections each containing 512x512 pixels. Finally, and perhaps of most import scientifically, microtomography using a synchrotron X-ray source, allows us to generate maps of individual element.

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