scholarly journals Improved Model on Buried-Oxide Damage Induced by Total-Ionizing-Dose Effect for HV SOI LDMOS

2021 ◽  
pp. 1-7
Author(s):  
Zhangyi'an Yuan ◽  
Ming Qiao ◽  
Xinjian Li ◽  
Dican Hou ◽  
Shuhao Zhang ◽  
...  
Keyword(s):  
Dose Effect ◽  
Total Ionizing Dose ◽  
Buried Oxide ◽  
Improved Model ◽  
Oxide Damage

Total ionizing dose response of fluorine implanted Silicon-On-Insulator buried oxide

2014 ◽  
Vol 54 (9-10) ◽  
pp. 2339-2343 ◽  
Author(s):  
Kenneth Potter ◽  
Katrina Morgan ◽  
Chris Shaw ◽  
Peter Ashburn ◽  
William Redman-White ◽  
...  
Keyword(s):  
Dose Response ◽  
Silicon On Insulator ◽  
Total Ionizing Dose ◽  
Buried Oxide

scholarly journals Total Ionizing Dose Effect and Failure Mechanism of Digital Signal Processor

2021 ◽  
Vol 30 (5) ◽  
pp. 986-990
Author(s):  
YU Xin ◽  
LU Wu ◽  
LI Xiaolong ◽  
LIU Mohan ◽  
WANG Xin ◽  
...  
Keyword(s):  
Failure Mechanism ◽  
Digital Signal Processor ◽  
Digital Signal ◽  
Dose Effect ◽  
Total Ionizing Dose ◽  
Signal Processor

Dependence of total ionizing dose effect of nMOS transistors on the on/off duty ratio of a gate voltage

2021 ◽  
Author(s):  
Munehiro Ogasawara ◽  
Ryoichiro Yoshida ◽  
Yuta Oshima ◽  
Motoki Ando ◽  
Arisa Kimura ◽  
...  
Keyword(s):  
Gate Voltage ◽  
Dose Effect ◽  
Duty Ratio ◽  
Total Ionizing Dose ◽  
Nmos Transistors

A Quantitative Approach to Characterize Total Ionizing Dose Effect of Periphery Device for 65 nm Flash Memory

2018 ◽  
Vol 10 (3) ◽  
pp. 378-382
Author(s):  
Dandan Jiang ◽  
Lei Jin ◽  
Zongliang Huo
Keyword(s):  
Flash Memory ◽  
Drain Current ◽  
Parameter Extraction ◽  
Dose Effect ◽  
Total Ionizing Dose ◽  
Shallow Trench Isolation ◽  
Trench Isolation ◽  
Radiation Behavior ◽  
Post Radiation ◽  
Net Positive Charge

To evaluate the total ionizing dose (TID) response of periphery devices with 65 nm flash memory, the TID effects of the main and parasitic transistor have been investigated based on the proposed novel parameter extraction approach. By analyzing post-radiation behavior of the device's drain current and interface trap density, it has been proven that the parasitic transistor demonstrates stronger radiation dependence than the main transistor. With the proposed approach, the roles of the parasitic transistor and main transistor in the TID effect are quantitatively characterized. For a W =10 μm HVN device, the main transistor Vth shows a shift of <0.1 V with a TID of 100 krad (Si), while the parasitic transistor shows shift >0.5 V with 100 krad (Si) radiation. It is concluded that the net positive charge accumulating in the shallow trench isolation oxide is responsible for the TID induced leakage and the Vth shift in the flash technology periphery device.

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