scholarly journals Degradation Mechanisms of GaN HEMTs With p-Type Gate Under Forward Gate Bias Overstress

2018 ◽  
Vol 65 (7) ◽  
pp. 2778-2783 ◽  
Author(s):  
M. Ruzzarin ◽  
M. Meneghini ◽  
A. Barbato ◽  
V. Padovan ◽  
O. Haeberlen ◽  
...  
Keyword(s):  
Gate Bias ◽  
Degradation Mechanisms ◽  
Gan Hemts ◽  
P Type

PBTI in GaN-HEMTs With p-Type Gate: Role of the Aluminum Content on $\Delta V_{\mathrm {TH}}$ and Underlying Degradation Mechanisms

2018 ◽  
Vol 65 (1) ◽  
pp. 38-44 ◽  
Author(s):  
Andrea Natale Tallarico ◽  
Steve Stoffels ◽  
Niels Posthuma ◽  
Paolo Magnone ◽  
Denis Marcon ◽  
...  
Keyword(s):  
Aluminum Content ◽  
Degradation Mechanisms ◽  
Gan Hemts ◽  
P Type

scholarly journals Performance Optimization of Nitrogen Dioxide Gas Sensor Based on Pd-AlGaN/GaN HEMTs by Gate Bias Modulation

Micromachines ◽  
2021 ◽  
Vol 12 (4) ◽  
pp. 400
Author(s):  
Van Cuong Nguyen ◽  
Kwangeun Kim ◽  
Hyungtak Kim
Keyword(s):  
Gas Sensors ◽  
Performance Optimization ◽  
Response Times ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Gate Bias ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Gan Hemts ◽  
Sensing Characteristics

We investigated the sensing characteristics of NO2 gas sensors based on Pd-AlGaN/GaN high electron mobility transistors (HEMTs) at high temperatures. In this paper, we demonstrated the optimization of the sensing performance by the gate bias, which exhibited the advantage of the FET-type sensors compared to the diode-type ones. When the sensor was biased near the threshold voltage, the electron density in the channel showed a relatively larger change with a response to the gas exposure and demonstrated a significant improvement in the sensitivity. At 300 °C under 100 ppm concentration, the sensor’s sensitivities were 26.7% and 91.6%, while the response times were 32 and 9 s at VG = 0 V and VG = −1 V, respectively. The sensor demonstrated the stable repeatability regardless of the gate voltage at a high temperature.

12 kV 4H-SiC p-IGBTs with Record Low Specific On-Resistance

2008 ◽  
Vol 600-603 ◽  
pp. 1187-1190 ◽  
Author(s):  
Q. Jon Zhang ◽  
Charlotte Jonas ◽  
Joseph J. Sumakeris ◽  
Anant K. Agarwal ◽  
John W. Palmour
Keyword(s):  
Carrier Lifetime ◽  
Drift Region ◽  
Gate Bias ◽  
Enhancement Layer ◽  
Channel Mobility ◽  
Dc Characteristics ◽  
Blocking Voltage ◽  
High Carrier ◽  
P Type ◽  
First Time

DC characteristics of 4H-SiC p-channel IGBTs capable of blocking -12 kV and conducting -0.4 A (-100 A/cm2) at a forward voltage of -5.2 V at 25°C are demonstrated for the first time. A record low differential on-resistance of 14 mW×cm2 was achieved with a gate bias of -20 V indicating a strong conductivity modulation in the p-type drift region. A moderately doped current enhancement layer grown on the lightly doped drift layer effectively reduces the JFET resistance while maintains a high carrier lifetime for conductivity modulation. A hole MOS channel mobility of 12.5 cm2/V-s at -20 V of gate bias was measured with a MOS threshold voltage of -5.8 V. The blocking voltage of -12 kV was achieved by Junction Termination Extension (JTE).

Ohmic and degradation mechanisms of Ag contacts on p-type GaN

2005 ◽  
Vol 86 (6) ◽  
pp. 062104 ◽  
Author(s):  
June-O Song ◽  
Joon Seop Kwak ◽  
Yongjo Park ◽  
Tae-Yeon Seong
Keyword(s):  
Degradation Mechanisms ◽  
P Type

Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure

2016 ◽  
Vol 58 ◽  
pp. 177-184 ◽  
Author(s):  
M. Meneghini ◽  
O. Hilt ◽  
C. Fleury ◽  
R. Silvestri ◽  
M. Capriotti ◽  
...  
Keyword(s):  
Gan Hemts ◽  
P Type

Negative gate bias stress effects on conduction and low frequency noise characteristics in p-type poly-Si thin-film transistors

2019 ◽  
Vol 28 (8) ◽  
pp. 088502
Author(s):  
Chao-Yang Han ◽  
Yuan Liu ◽  
Yu-Rong Liu ◽  
Ya-Yi Chen ◽  
Li Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Low Frequency ◽  
Frequency Noise ◽  
Gate Bias ◽  
Stress Effects ◽  
Bias Stress ◽  
Noise Characteristics ◽  
P Type ◽  
Si Thin Film
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