Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure

2016 ◽  
Vol 58 ◽  
pp. 177-184 ◽  
Author(s):  
M. Meneghini ◽  
O. Hilt ◽  
C. Fleury ◽  
R. Silvestri ◽  
M. Capriotti ◽  
...  
Keyword(s):  
Gan Hemts ◽  
P Type

Normally-off GaN HEMTs with InGaN p-gate cap layer formed by polarization doping

2021 ◽  
Author(s):  
Changkun Zeng ◽  
Weizong Xu ◽  
Yuanyang Xia ◽  
Ke Wang ◽  
Fangfang Ren ◽  
...  
Keyword(s):  
Schottky Contact ◽  
Limiting Factor ◽  
Ingan Layer ◽  
Safe Operation ◽  
High Quality ◽  
Cap Layer ◽  
Doping Technique ◽  
Gan Hemts ◽  
P Type ◽  
Current Blocking

Abstract Narrow gate margin has been the critical limiting factor for the p-gate normally-off GaN HEMTs, imposing significant challenges in both gate-drive design and gate reliability. In this work, by developing dopant-free p-type polarization doping technique in composition-graded InGaN layer, high-quality Schottky contact between the gate metal and cap layer was demonstrated, achieving excellent gate current blocking performance (10-6 mA/mm) after the turning-on of the gate heterojunction structure. Resultantly, normally-off GaN HEMTs with enhanced gate breakdown voltage up to 15.2 V was realized, being especially beneficial for the simplification of gate drive design and the safe operation of gate terminal.

Gate Reliability Investigation in Normally-Off p-Type-GaN Cap/AlGaN/GaN HEMTs Under Forward Bias Stress

2016 ◽  
Vol 37 (4) ◽  
pp. 385-388 ◽  
Author(s):  
M. Tapajna ◽  
O. Hilt ◽  
E. Bahat-Treidel ◽  
J. Wurfl ◽  
J. Kuzmik
Keyword(s):  
Forward Bias ◽  
Bias Stress ◽  
Gan Hemts ◽  
P Type

scholarly journals Degradation Mechanisms of GaN HEMTs With p-Type Gate Under Forward Gate Bias Overstress

2018 ◽  
Vol 65 (7) ◽  
pp. 2778-2783 ◽  
Author(s):  
M. Ruzzarin ◽  
M. Meneghini ◽  
A. Barbato ◽  
V. Padovan ◽  
O. Haeberlen ◽  
...  
Keyword(s):  
Gate Bias ◽  
Degradation Mechanisms ◽  
Gan Hemts ◽  
P Type

scholarly journals Threshold Voltage Instability in GaN HEMTs With p-Type Gate: Mg Doping Compensation

2019 ◽  
Vol 40 (4) ◽  
pp. 518-521 ◽  
Author(s):  
Andrea Natale Tallarico ◽  
Steve Stoffels ◽  
Niels Posthuma ◽  
Stefaan Decoutere ◽  
Enrico Sangiorgi ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Mg Doping ◽  
Voltage Instability ◽  
Gan Hemts ◽  
P Type

scholarly journals Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate

Energies ◽  
2017 ◽  
Vol 10 (2) ◽  
pp. 153 ◽  
Author(s):  
Matteo Meneghini ◽  
Oliver Hilt ◽  
Joachim Wuerfl ◽  
Gaudenzio Meneghesso
Keyword(s):  
Gan Hemts ◽  
P Type

PBTI in GaN-HEMTs With p-Type Gate: Role of the Aluminum Content on $\Delta V_{\mathrm {TH}}$ and Underlying Degradation Mechanisms

2018 ◽  
Vol 65 (1) ◽  
pp. 38-44 ◽  
Author(s):  
Andrea Natale Tallarico ◽  
Steve Stoffels ◽  
Niels Posthuma ◽  
Paolo Magnone ◽  
Denis Marcon ◽  
...  
Keyword(s):  
Aluminum Content ◽  
Degradation Mechanisms ◽  
Gan Hemts ◽  
P Type
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