Ohmic and degradation mechanisms of Ag contacts on p-type GaN

2005 ◽  
Vol 86 (6) ◽  
pp. 062104 ◽  
Author(s):  
June-O Song ◽  
Joon Seop Kwak ◽  
Yongjo Park ◽  
Tae-Yeon Seong
Keyword(s):  
Degradation Mechanisms ◽  
P Type

InGaN Laser Diode Degradation. Surface and Bulk Processes

2009 ◽  
Vol 1195 ◽  
Author(s):  
Piotr Perlin ◽  
Łucja Marona ◽  
Przemek Wisniewski ◽  
Mike Leszczynski ◽  
Pawel Prystawko ◽  
...  
Keyword(s):  
Diffusion Processes ◽  
Diffusion Mechanism ◽  
Laser Diodes ◽  
Photochemical Reactions ◽  
Extended Defects ◽  
Degradation Mechanisms ◽  
Electrical Stress ◽  
Physical Effects ◽  
P Type ◽  
Exposed Facets

AbstractWe discuss main degradation mechanisms present in nitride based laser diodes operating in 400-440 nm spectral range. We can clearly divide the aging processes into these occurring on the exposed facets of the device and into the bulk phenomena. Surface processes are predominantly connected with photochemical reactions on the laser mirrors and manifest by the formation of the carbon deposits. The nature of these photochemical reactions resembles very closely the mechanism known as Package Induced Failure observed previously in case of 980 nm laser diodes. Degradation involving bulk like effects is much less understood. The experimental results by other group are not sufficient for proposing an unambiguous model of the physical effects involved. In particular, it consists in observation related to dopants diffusion and recombination mechanisms. Magnesium diffusion from the p-type layers into the active layer was proposed as a possible degradation path. However, our study of SIMS profiles in the device subjected to over 8 000 h of electrical stress reveals no visible modification in the Mg profile. The same holds for the hydrogen spatial distribution thus substantially limiting candidates for the diffusion processes. Nevertheless, it seems that the diffusion mechanism is involved in bulk degradation. The claim is supported by two facts: well confirmed stability of the extended defects network in nitride emitters and characteristic square-root time-dependence of the degradation rate.

scholarly journals Degradation Mechanisms of GaN HEMTs With p-Type Gate Under Forward Gate Bias Overstress

2018 ◽  
Vol 65 (7) ◽  
pp. 2778-2783 ◽  
Author(s):  
M. Ruzzarin ◽  
M. Meneghini ◽  
A. Barbato ◽  
V. Padovan ◽  
O. Haeberlen ◽  
...  
Keyword(s):  
Gate Bias ◽  
Degradation Mechanisms ◽  
Gan Hemts ◽  
P Type

PBTI in GaN-HEMTs With p-Type Gate: Role of the Aluminum Content on $\Delta V_{\mathrm {TH}}$ and Underlying Degradation Mechanisms

2018 ◽  
Vol 65 (1) ◽  
pp. 38-44 ◽  
Author(s):  
Andrea Natale Tallarico ◽  
Steve Stoffels ◽  
Niels Posthuma ◽  
Paolo Magnone ◽  
Denis Marcon ◽  
...  
Keyword(s):  
Aluminum Content ◽  
Degradation Mechanisms ◽  
Gan Hemts ◽  
P Type

scholarly journals Examination of Photovoltaic Silicon Module Degradation Under High-Voltage Bias and Damp Heat by Electroluminescence

2017 ◽  
Vol 139 (3) ◽  
Author(s):  
Kristijan Brecl ◽  
Matevž Bokalič ◽  
Marko Topič
Keyword(s):  
High Voltage ◽  
Degradation Process ◽  
Energy Output ◽  
Degradation Mechanisms ◽  
Pv System ◽  
Performance Loss ◽  
Voltage Bias ◽  
Pv Modules ◽  
In Series ◽  
P Type

The photovoltaic (PV) modules are in PV arrays normally connected in series and thus some of them are exposed to high system voltages since frames of the PV modules are grounded. To predict the long-term PV system energy output and PV module lifetime, it is very important to understand and take into account the degradation process of PV modules under high-voltage stress. Accelerated tests under damp heat (over 1300 h of DH85/60; RH = 85%, T = 60 °C) of in-house developed monocrystalline silicon PV modules with p-type solar cells were preformed while connected to a positive or negative voltage bias of 1000 V. The negative biased modules exhibited just a little degradation, while the positive biased modules degraded rapidly. We identified three degradation mechanisms: cell degradation, silver corrosion, and EVA evaporation. The degradation mechanisms contribute to almost 15% of the performance loss of the 1000 V positive biased modules after more than 1300 h of DH85/60 testing, while the power degradation of the negative biased modules remains below 3%.

Interface morphology of thermal oxide grown on polycrystalline silicon by different processes

1992 ◽  
Vol 50 (2) ◽  
pp. 1396-1397
Author(s):  
H. Yen ◽  
E. P. Kvam ◽  
R. Bashir ◽  
S. Venkatesan ◽  
G. W. Neudeck
Keyword(s):  
Integrated Circuits ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Interface Morphology ◽  
Oxide Interface ◽  
Poly Silicon ◽  
Thermal Oxide ◽  
Grain Orientations ◽  
Polycrystalline Silicon Films ◽  
P Type

Polycrystalline silicon, when highly doped, is commonly used in microelectronics applications such as gates and interconnects. The packing density of integrated circuits can be enhanced by fabricating multilevel polycrystalline silicon films separated by insulating SiO2 layers. It has been found that device performance and electrical properties are strongly affected by the interface morphology between polycrystalline silicon and SiO2. As a thermal oxide layer is grown, the poly silicon is consumed, and there is a volume expansion of the oxide relative to the atomic silicon. Roughness at the poly silicon/thermal oxide interface can be severely deleterious due to stresses induced by the volume change during oxidation. Further, grain orientations and grain boundaries may alter oxidation kinetics, which will also affect roughness, and thus stress.Three groups of polycrystalline silicon films were deposited by LPCVD after growing thermal oxide on p-type wafers. The films were doped with phosphorus or arsenic by three different methods.

Determination of arsenic atom distribution arsenic doped silicon using HOLZ-line analysis

1996 ◽  
Vol 54 ◽  
pp. 976-977
Author(s):  
Y. Kikuchi ◽  
N. Hashikawa ◽  
F. Uesugi ◽  
E. Wakai ◽  
K. Watanabe ◽  
...  
Keyword(s):  
Inelastic Scattering ◽  
Zone Axis ◽  
Experimental Result ◽  
Background Intensity ◽  
Crystal Thickness ◽  
Arsenic Atom ◽  
Doped Silicon ◽  
P Type ◽  
Line Analysis

In order to measure the concentration of arsenic atoms in nanometer regions of arsenic doped silicon, the HOLZ analysis is carried out underthe exact [011] zone axis observation. In previous papers, it is revealed that the position of two bright lines in the outer SOLZ structures on the[011] zone axis is little influenced by the crystal thickness and the background intensity caused by inelastic scattering electrons, but is sensitive to the concentration of As atoms substitutbnal for Siatomic site.As the result, it becomes possible to determine the concentration of electrically activated As atoms in silicon within an observed area by means of the simple fitting between experimental result and dynamical simulatioan. In the present work, in order to investigate the distribution of electrically activated As in silicon, the outer HOLZ analysis is applied using a nanometer sized probe of TEM equipped with a FEG.Czodiralsld-gown<100>orientated p-type Si wafers with a resistivity of 10 Ώ cm are used for the experiments.TheAs+ implantation is performed at a dose of 5.0X1015cm-2at 25keV.

Investigating the functional link between TMEM165 and SPCA1

2019 ◽  
Vol 476 (21) ◽  
pp. 3281-3293 ◽  
Author(s):  
Elodie Lebredonchel ◽  
Marine Houdou ◽  
Hans-Heinrich Hoffmann ◽  
Kateryna Kondratska ◽  
Marie-Ange Krzewinski ◽  
...  
Keyword(s):  
Subcellular Localization ◽  
Complete Loss ◽  
Protein Family ◽  
Uncharacterized Protein ◽  
Functional Link ◽  
P Type

TMEM165 was highlighted in 2012 as the first member of the Uncharacterized Protein Family 0016 (UPF0016) related to human glycosylation diseases. Defects in TMEM165 are associated with strong Golgi glycosylation abnormalities. Our previous work has shown that TMEM165 rapidly degrades with supraphysiological manganese supplementation. In this paper, we establish a functional link between TMEM165 and SPCA1, the Golgi Ca2+/Mn2+ P-type ATPase pump. A nearly complete loss of TMEM165 was observed in SPCA1-deficient Hap1 cells. We demonstrate that TMEM165 was constitutively degraded in lysosomes in the absence of SPCA1. Complementation studies showed that TMEM165 abundance was directly dependent on SPCA1's function and more specifically its capacity to pump Mn2+ from the cytosol into the Golgi lumen. Among SPCA1 mutants that differentially impair Mn2+ and Ca2+ transport, only the Q747A mutant that favors Mn2+ pumping rescues the abundance and Golgi subcellular localization of TMEM165. Interestingly, the overexpression of SERCA2b also rescues the expression of TMEM165. Finally, this paper highlights that TMEM165 expression is linked to the function of SPCA1.

Structural dynamics of P-type ATPase ion pumps

2019 ◽  
Vol 47 (5) ◽  
pp. 1247-1257 ◽  
Author(s):  
Mateusz Dyla ◽  
Sara Basse Hansen ◽  
Poul Nissen ◽  
Magnus Kjaergaard
Keyword(s):  
Structural Dynamics ◽  
Single Molecule ◽  
New Technologies ◽  
Atp Hydrolysis ◽  
Resonance Energy Transfer ◽  
Resonance Energy ◽  
Time Resolved ◽  
Dynamics Simulations ◽  
Types Of Information ◽  
P Type

Abstract P-type ATPases transport ions across biological membranes against concentration gradients and are essential for all cells. They use the energy from ATP hydrolysis to propel large intramolecular movements, which drive vectorial transport of ions. Tight coordination of the motions of the pump is required to couple the two spatially distant processes of ion binding and ATP hydrolysis. Here, we review our current understanding of the structural dynamics of P-type ATPases, focusing primarily on Ca2+ pumps. We integrate different types of information that report on structural dynamics, primarily time-resolved fluorescence experiments including single-molecule Förster resonance energy transfer and molecular dynamics simulations, and interpret them in the framework provided by the numerous crystal structures of sarco/endoplasmic reticulum Ca2+-ATPase. We discuss the challenges in characterizing the dynamics of membrane pumps, and the likely impact of new technologies on the field.

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