PBTI in GaN-HEMTs With p-Type Gate: Role of the Aluminum Content on $\Delta V_{\mathrm {TH}}$ and Underlying Degradation Mechanisms

Andrea Natale Tallarico; Steve Stoffels; Niels Posthuma; Paolo Magnone; Denis Marcon; Stefaan Decoutere; Enrico Sangiorgi; Claudio Fiegna

doi:10.1109/ted.2017.2769167

PBTI in GaN-HEMTs With p-Type Gate: Role of the Aluminum Content on $\Delta V_{\mathrm {TH}}$ and Underlying Degradation Mechanisms

IEEE Transactions on Electron Devices ◽

10.1109/ted.2017.2769167 ◽

2018 ◽

Vol 65 (1) ◽

pp. 38-44 ◽

Cited By ~ 20

Author(s):

Andrea Natale Tallarico ◽

Steve Stoffels ◽

Niels Posthuma ◽

Paolo Magnone ◽

Denis Marcon ◽

...

Keyword(s):

Aluminum Content ◽

Degradation Mechanisms ◽

Gan Hemts ◽

P Type

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Degradation Mechanisms of GaN HEMTs With p-Type Gate Under Forward Gate Bias Overstress

IEEE Transactions on Electron Devices ◽

10.1109/ted.2018.2836460 ◽

2018 ◽

Vol 65 (7) ◽

pp. 2778-2783 ◽

Cited By ~ 19

Author(s):

M. Ruzzarin ◽

M. Meneghini ◽

A. Barbato ◽

V. Padovan ◽

O. Haeberlen ◽

...

Keyword(s):

Gate Bias ◽

Degradation Mechanisms ◽

Gan Hemts ◽

P Type

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1758-P: Type 2 Diabetes–Associated Mood Disorders: Role of Insulin Resistance in Serotonergic Neurons

Diabetes ◽

10.2337/db20-1758-p ◽

2020 ◽

Vol 69 (Supplement 1) ◽

pp. 1758-P

Author(s):

HUGO MARTIN ◽

SÉBASTIEN BULLICH ◽

FABIEN DUCROCQ ◽

MARION GRALAND ◽

CLARA OLIVRY ◽

...

Keyword(s):

Insulin Resistance ◽

Type 2 Diabetes ◽

Mood Disorders ◽

Serotonergic Neurons ◽

P Type

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Role of ALD Al2O3 Surface Passivation on the Performance of p-Type Cu2O Thin Film Transistors

ACS Applied Materials & Interfaces ◽

10.1021/acsami.0c18915 ◽

2021 ◽

Vol 13 (3) ◽

pp. 4156-4164

Author(s):

Mari Napari ◽

Tahmida N. Huq ◽

David J. Meeth ◽

Mikko J. Heikkilä ◽

Kham M. Niang ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Surface Passivation ◽

Cu2o Thin Film ◽

P Type

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The Role of Metal-Catalyzed Chemical Etching Black Silicon in the Reduction of Light- and Elevated Temperature-Induced Degradation in P-Type Multicrystalline Wafers

IEEE Journal of Photovoltaics ◽

10.1109/jphotov.2021.3059426 ◽

2021 ◽

pp. 1-7

Author(s):

Muhammad Umair Khan ◽

Giuseppe Scardera ◽

Shuai Zou ◽

Daqi Zhang ◽

Malcolm Abbott

Keyword(s):

Elevated Temperature ◽

Chemical Etching ◽

Black Silicon ◽

Metal Catalyzed ◽

P Type

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LIGHT-INDUCED EXCESS CONDUCTIVITY AND THE ROLE OF ARGON IN THE DEPOSITION OF DOPING-MODULATED AMORPHOUS SILICON SUPERLATTICES.

MRS Proceedings ◽

10.1557/proc-56-399 ◽

1985 ◽

Vol 56 ◽

Author(s):

F.-C. Su ◽

S. Levine ◽

P. E. Vanier ◽

F. J. Kampas

Keyword(s):

Amorphous Silicon ◽

Amorphous Semiconductor ◽

Excess Conductivity ◽

The Novel ◽

Semiconductor Superlattice ◽

Deposition Parameters ◽

Superlattice Structures ◽

Argon Dilution ◽

P Type

AbstractAmorphous semiconductor superlattice structures consisting of alternating n-type and p-type doped layers of hydrogenated amorphous silicon (a-Si:H) have been made by silane glow discharge in a single chamber system. These multilayered films show the novel phenomenon of light-induced excess conductivity (LEC) associated with a metastable state having a lifetime of order of days. This report shows that the LEC effect is quite dependent on the specific details of the deposition parameters, namely dilution of the silane with inert gas, substrate temperature and layer thickness. In order to investigate the origin of the LEC effect, argon dilution was used for specific regions of the structure. This experiment shows that the slow states are distributed throughout the layers, and are not concentrated at the interfaces.

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Ohmic and degradation mechanisms of Ag contacts on p-type GaN

Applied Physics Letters ◽

10.1063/1.1863441 ◽

2005 ◽

Vol 86 (6) ◽

pp. 062104 ◽

Cited By ~ 105

Author(s):

June-O Song ◽

Joon Seop Kwak ◽

Yongjo Park ◽

Tae-Yeon Seong

Keyword(s):

Degradation Mechanisms ◽

P Type

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An effective and efficient approach to p-type AlN by Be2:O codoping from first-principles calculations

Modern Physics Letters B ◽

10.1142/s0217984916502572 ◽

2016 ◽

Vol 30 (20) ◽

pp. 1650257

Author(s):

Meng Zhao ◽

Wenjun Wang ◽

Jun Wang ◽

Junwei Yang ◽

Weijie Hu ◽

...

Keyword(s):

First Principles ◽

Ionization Energy ◽

Hole Concentration ◽

Valence Band Maximum ◽

First Principles Calculations ◽

Mutual Compensation ◽

Efficient Approach ◽

P Type ◽

Codoping Method

Various Be:O-codoped AlN crystals have been investigated via first-principles calculations to evaluate the role of the different combinations in effectively and efficiently inducing p-type carriers. It is found that the O atom is favored to bond with two Be atoms. The formed Be2:O complexes decrease the acceptor ionization energy to 0.11 eV, which is 0.16 eV lower than that of an isolated Be in AlN, implying that the hole concentration could probably be increased by 2–3 orders of magnitude. The electronic structure of Be2:O-codoped AlN shows that the lower ionization energy can be attributed to the interaction between Be and O. The Be–O complexes, despite failing to induce p-type carriers for the mutual compensation of Be and O, introduce new occupied states on the valence-band maximum (VBM) and hence the energy needed for the transition of electrons to the acceptor level is reduced. Thus, the Be2:O codoping method is expected to be an effective and efficient approach to realizing p-type AlN.

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