p-Type conductivity of GeTe: The role of lone-pair electrons

2012 ◽  
Vol 249 (10) ◽  
pp. 1902-1906 ◽  
Author(s):  
Alexander V. Kolobov ◽  
Paul Fons ◽  
Junji Tominaga
2015 ◽  
Vol 17 (7) ◽  
pp. 5485-5489 ◽  
Author(s):  
M. N. Amini ◽  
R. Saniz ◽  
D. Lamoen ◽  
B. Partoens

With the help of first-principles calculations, we investigate the VZn–NO–H acceptor complex in ZnO. We find that H plays an important role, because it lowers the formation energy of the complex with respect to VZn–NO, a complex known to exhibit p-type behavior. However, this additional H atom also occupies the hole level of VZn–NO making the VZn–NO–H complex a deep acceptor.


2014 ◽  
Vol 104 (11) ◽  
pp. 112106 ◽  
Author(s):  
H. H. Zhang ◽  
X. H. Pan ◽  
Y. Li ◽  
Z. Z. Ye ◽  
B. Lu ◽  
...  

2013 ◽  
Vol 25 (47) ◽  
pp. 475801 ◽  
Author(s):  
J Berashevich ◽  
J A Rowlands ◽  
A Reznik
Keyword(s):  

2020 ◽  
Vol 56 (31) ◽  
pp. 4356-4359 ◽  
Author(s):  
Mengjia Luo ◽  
Kejun Bu ◽  
Xian Zhang ◽  
Jian Huang ◽  
Ruiqi Wang ◽  
...  

An intrinsically low thermal conductivity is observed in a new p-type semiconductor SrOCuBiSe2 which combines the dual effect of Bi 6s2 lone-pair electrons and rattling vibration of Cu atoms.


2020 ◽  
Vol 11 (22) ◽  
pp. 9702-9707
Author(s):  
Kejun Bu ◽  
Hui Luo ◽  
Songhao Guo ◽  
Mei Li ◽  
Dong Wang ◽  
...  

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