Solid-source doping by using phosphosilicate glass into p-type bulk Si (100) substrate: Role of the capping SiO2 barrier

2018 ◽  
Vol 36 (6) ◽  
pp. 061205 ◽  
Author(s):  
Yoshiaki Kikuchi ◽  
Antony Peter ◽  
Bartlomiej Jan Pawlak ◽  
An De Keersgieter ◽  
Pierre Eyben ◽  
...  
Keyword(s):  
Phosphosilicate Glass ◽  
P Type

1758-P: Type 2 Diabetes–Associated Mood Disorders: Role of Insulin Resistance in Serotonergic Neurons

Diabetes ◽  
2020 ◽  
Vol 69 (Supplement 1) ◽  
pp. 1758-P
Author(s):  
HUGO MARTIN ◽  
SÉBASTIEN BULLICH ◽  
FABIEN DUCROCQ ◽  
MARION GRALAND ◽  
CLARA OLIVRY ◽  
...  
Keyword(s):  
Insulin Resistance ◽  
Type 2 Diabetes ◽  
Mood Disorders ◽  
Serotonergic Neurons ◽  
P Type

scholarly journals Role of ALD Al2O3 Surface Passivation on the Performance of p-Type Cu2O Thin Film Transistors

2021 ◽  
Vol 13 (3) ◽  
pp. 4156-4164
Author(s):  
Mari Napari ◽  
Tahmida N. Huq ◽  
David J. Meeth ◽  
Mikko J. Heikkilä ◽  
Kham M. Niang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Surface Passivation ◽  
Cu2o Thin Film ◽  
P Type

LIGHT-INDUCED EXCESS CONDUCTIVITY AND THE ROLE OF ARGON IN THE DEPOSITION OF DOPING-MODULATED AMORPHOUS SILICON SUPERLATTICES.

1985 ◽  
Vol 56 ◽  
Author(s):  
F.-C. Su ◽  
S. Levine ◽  
P. E. Vanier ◽  
F. J. Kampas
Keyword(s):  
Amorphous Silicon ◽  
Amorphous Semiconductor ◽  
Excess Conductivity ◽  
The Novel ◽  
Semiconductor Superlattice ◽  
Deposition Parameters ◽  
Superlattice Structures ◽  
Argon Dilution ◽  
P Type

AbstractAmorphous semiconductor superlattice structures consisting of alternating n-type and p-type doped layers of hydrogenated amorphous silicon (a-Si:H) have been made by silane glow discharge in a single chamber system. These multilayered films show the novel phenomenon of light-induced excess conductivity (LEC) associated with a metastable state having a lifetime of order of days. This report shows that the LEC effect is quite dependent on the specific details of the deposition parameters, namely dilution of the silane with inert gas, substrate temperature and layer thickness. In order to investigate the origin of the LEC effect, argon dilution was used for specific regions of the structure. This experiment shows that the slow states are distributed throughout the layers, and are not concentrated at the interfaces.

An effective and efficient approach to p-type AlN by Be2:O codoping from first-principles calculations

2016 ◽  
Vol 30 (20) ◽  
pp. 1650257
Author(s):  
Meng Zhao ◽  
Wenjun Wang ◽  
Jun Wang ◽  
Junwei Yang ◽  
Weijie Hu ◽  
...  
Keyword(s):  
First Principles ◽  
Ionization Energy ◽  
Hole Concentration ◽  
Valence Band Maximum ◽  
First Principles Calculations ◽  
Mutual Compensation ◽  
Efficient Approach ◽  
P Type ◽  
Codoping Method

Various Be:O-codoped AlN crystals have been investigated via first-principles calculations to evaluate the role of the different combinations in effectively and efficiently inducing p-type carriers. It is found that the O atom is favored to bond with two Be atoms. The formed Be2:O complexes decrease the acceptor ionization energy to 0.11 eV, which is 0.16 eV lower than that of an isolated Be in AlN, implying that the hole concentration could probably be increased by 2–3 orders of magnitude. The electronic structure of Be2:O-codoped AlN shows that the lower ionization energy can be attributed to the interaction between Be and O. The Be–O complexes, despite failing to induce p-type carriers for the mutual compensation of Be and O, introduce new occupied states on the valence-band maximum (VBM) and hence the energy needed for the transition of electrons to the acceptor level is reduced. Thus, the Be2:O codoping method is expected to be an effective and efficient approach to realizing p-type AlN.

p-Type conductivity of GeTe: The role of lone-pair electrons

2012 ◽  
Vol 249 (10) ◽  
pp. 1902-1906 ◽  
Author(s):  
Alexander V. Kolobov ◽  
Paul Fons ◽  
Junji Tominaga
Keyword(s):  
Lone Pair ◽  
Type Conductivity ◽  
P Type ◽  
Lone Pair Electrons

scholarly journals The evolution of the metazoan Toll receptor family and its expression during protostome development

2021 ◽  
Author(s):  
Andrea Orús-Alcalde ◽  
Tsai-Ming Lu ◽  
Andreas Hejnol
Keyword(s):  
Phylogenetic Analysis ◽  
Transmembrane Domain ◽  
Leucine Rich Repeat ◽  
Animal Development ◽  
Phylogenetic Studies ◽  
Repeat Domain ◽  
Toll Receptor ◽  
P Type

Abstract Background: Toll-like receptors (TLRs) play a crucial role in immunity and development. They contain leucine-rich repeat domains, one transmembrane domain, and one Toll/IL-1 receptor domain. TLRs have been classified into V-type/scc and P-type/mcc TLRs, based on differences in the leucine-rich repeat domain region. Although TLRs are widespread in animals, detailed phylogenetic studies of this gene family are lacking. Here we aim to uncover TLR evolution by conducting a survey and a phylogenetic analysis in species across Bilateria. To discriminate between their role in development and immunity we furthermore analyzed stage-specific transcriptomes of the ecdysozoans Priapulus caudatus and Hypsibius exemplaris, and the spiralians Crassostrea gigas and Terebratalia transversa.Results: We detected a low number of TLRs in ecdysozoan species, and multiple independent radiations within the Spiralia. V-type/scc and P-type/mcc type-receptors are present in cnidarians, protostomes and deuterostomes, and therefore they emerged early in TLR evolution, followed by a loss in xenacoelomorphs. Our phylogenetic analysis shows that TLRs cluster into three major clades: clade α is present in cnidarians, ecdysozoans, and spiralians; clade β in deuterostomes, ecdysozoans, and spiralians; and clade γ is only found in spiralians. Our stage-specific transcriptome and in situ hybridization analyses show that TLRs are expressed during development in all species analyzed, which indicates a broad role of TLRs during animal development.Conclusions: Our findings suggest that the bilaterian TLRs likely emerged by duplication from a single TLR encoding gene (proto-TLR) present in the last common cnidarian-bilaterian ancestor. This proto-TLR gene duplicated before the split of protostomes and deuterostomes; a second duplication occurred in the lineage to the Trochozoa. While all three clades further radiated in several spiralian lineages, specific TLRs clades have been presumably lost in others. Furthermore, the expression of the majority of these genes during protostome ontogeny suggests their involvement in immunity and development.

scholarly journals Исследование формирования омических контактов Au/Mo/Ti с пониженным сопротивлением к эпитаксиальным слоям алмаза p-типа

2019 ◽  
Vol 89 (12) ◽  
pp. 1923
Author(s):  
М.Н. Дроздов ◽  
Е.В. Демидов ◽  
Ю.Н. Дроздов ◽  
С.А. Краев ◽  
В.И. Шашкин ◽  
...  
Keyword(s):  
Titanium Carbide ◽  
Contact Resistance ◽  
Ohmic Contacts ◽  
Contact Region ◽  
Effective Diffusion ◽  
Protective Properties ◽  
High Adhesion ◽  
Heavy Doping ◽  
P Type

The formation of ohmic Au/Mo/Ti contacts to epitaxial p-type diamond films is studied. The effect of annealing on the electrical and structural properties of contacts has been investigated. It was shown that during rapid thermal annealing, the outer layer of gold protects the contact system from oxidation up to a temperature of 850°C, unlike the simplified Au/Ti system, which is more common in modern works. In Au/Ti structures without a Mo layer after high-temperature annealing, effective diffusion of titanium into the gold layer occurs, which reduces its protective properties and accelerates the diffusion of oxygen to the boundary with the diamond. Oxidation of the Ti/C contact region blocks the formation of a conductive layer of titanium carbide with high adhesion at the border with diamond. The role of various factors in reducing the contact resistance is compared: annealing for the formation of titanium carbide, heavy doping of diamond with boron atoms, and crystalline perfection of epitaxial diamond substrates. For doped epitaxial films grown on single-sector quality substrates, non-annealed ohmic contacts with a record contact resistance of 4•10<-7> Ω•cm<2> were obtained.

The Role of Dark Annealing in Light and Elevated Temperature Induced Degradation in p-Type Mono-Like Silicon

2020 ◽  
Vol 10 (4) ◽  
pp. 992-1000
Author(s):  
Hang Cheong Sio ◽  
Di Kang ◽  
Xinyu Zhang ◽  
Jie Yang ◽  
Jinsheng Jin ◽  
...  
Keyword(s):  
Elevated Temperature ◽  
P Type
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