Bandgap Engineering and Strain Effects of Core–Shell Tunneling Field-Effect Transistors

2018 ◽  
Vol 65 (1) ◽  
pp. 277-281 ◽  
Author(s):  
Jun-Sik Yoon ◽  
Kihyun Kim ◽  
M. Meyyappan ◽  
Chang-Ki Baek
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Core Shell ◽  
Bandgap Engineering ◽  
Strain Effects ◽  
Tunneling Field Effect Transistors

Ge-SixGe1-x core-shell nanowire tunneling field-effect transistors

2010 ◽  
Author(s):  
Junghyo Nah ◽  
Yonghyun Kim ◽  
E. -S. Liu ◽  
K. M. Varahramyan ◽  
S. K. Banerjee ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Core Shell ◽  
Tunneling Field Effect Transistors

$\hbox{Ge-Si}_{x}\hbox{Ge}_{1 - x}$ Core–Shell Nanowire Tunneling Field-Effect Transistors

2010 ◽  
Vol 57 (8) ◽  
pp. 1883-1888 ◽  
Author(s):  
Jun Nah ◽  
En-Shao Liu ◽  
Kamran M. Varahramyan ◽  
Emanuel Tutuc
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Core Shell ◽  
Tunneling Field Effect Transistors

Bandgap engineering of group IV materials for complementary n and p tunneling field effect transistors

2013 ◽  
Vol 102 (11) ◽  
pp. 113106 ◽  
Author(s):  
R. Kotlyar ◽  
U. E. Avci ◽  
S. Cea ◽  
R. Rios ◽  
T. D. Linton ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Group Iv ◽  
Bandgap Engineering ◽  
Tunneling Field Effect Transistors
Sign in / Sign up

Export Citation Format

Share Document