Study of fully-depleted Ge double-gate n-type Tunneling Field-Effect Transistors for improvement in on-state current and sub-threshold swing

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2017.08.014 ◽

2018 ◽

Vol 95 ◽

pp. 51-58 ◽

Cited By ~ 3

Author(s):

Xiangyu Liu ◽

Huiyong Hu ◽

Meng Wang ◽

Heming Zhang ◽

Shimin Cui ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Double Gate ◽

Fully Depleted ◽

Tunneling Field Effect Transistors

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Performances Improvement of Tunneling Field-Effect Transistors' with the Advanced Double-Gate PN Construction

2020 IEEE International Conference on Consumer Electronics - Taiwan (ICCE-Taiwan) ◽

10.1109/icce-taiwan49838.2020.9258240 ◽

2020 ◽

Author(s):

Yu-Jen Chen ◽

Jyi-Tsong Lin

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Double Gate ◽

Tunneling Field Effect Transistors

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Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors

Science China Information Sciences ◽

10.1007/s11432-019-2716-5 ◽

2020 ◽

Vol 63 (12) ◽

Author(s):

Guoliang Tian ◽

Jinshun Bi ◽

Gaobo Xu ◽

Kai Xi ◽

Xueqin Yang ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Silicon On Insulator ◽

Double Gate ◽

Single Event ◽

Transient Effects ◽

Single Event Transient ◽

Tunneling Field Effect Transistors

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A Quasi-Analytical Model for Double-Gate Tunneling Field-Effect Transistors

IEEE Electron Device Letters ◽

10.1109/led.2012.2208933 ◽

2012 ◽

Vol 33 (10) ◽

pp. 1468-1470 ◽

Cited By ~ 55

Author(s):

Andrew Pan ◽

Chi On Chui

Keyword(s):

Analytical Model ◽

Field Effect ◽

Field Effect Transistors ◽

Double Gate ◽

Tunneling Field Effect Transistors ◽

Gate Tunneling

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Suppression of Ambipolar Current and Analysis of RF Performance in Double Gate Tunneling Field Effect Transistors for Low-Power Applications

International Journal of Nanoparticles and Nanotechnology ◽

10.35840/2631-5084/5533 ◽

2020 ◽

Vol 6 (1) ◽

Author(s):

Guenifi N ◽

Rahi SB ◽

Larbi M

Keyword(s):

Low Power ◽

Field Effect ◽

Field Effect Transistors ◽

Double Gate ◽

Tunneling Field Effect Transistors ◽

Ambipolar Current ◽

Gate Tunneling ◽

Rf Performance

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Analysis of radio frequency and stability performance on double-gate extended source tunneling field-effect transistors

2015 23rd Iranian Conference on Electrical Engineering ◽

10.1109/iraniancee.2015.7146364 ◽

2015 ◽

Cited By ~ 1

Author(s):

Saeid Marjani ◽

Seyed Ebrahim Hosseini

Keyword(s):

Radio Frequency ◽

Field Effect ◽

Field Effect Transistors ◽

Double Gate ◽

Extended Source ◽

Stability Performance ◽

Tunneling Field Effect Transistors

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Drive Current Enhancement with Invasive Source in Double Gate Tunneling Field-Effect Transistors

10.7567/ssdm.2010.f-5-5 ◽

2010 ◽

Author(s):

Y. Yang ◽

P. F. Guo ◽

G. Q. Han ◽

C. L. Zhan ◽

L. Fan ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Double Gate ◽

Drive Current ◽

Tunneling Field Effect Transistors ◽

Gate Tunneling

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A compact model for double-gate tunneling field-effect-transistors and its implications on circuit behaviors

2012 International Electron Devices Meeting ◽

10.1109/iedm.2012.6478994 ◽

2012 ◽

Cited By ~ 34

Author(s):

Lining Zhang ◽

Jin He ◽

Mansun Chan

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Compact Model ◽

Double Gate ◽

Tunneling Field Effect Transistors ◽

Gate Tunneling

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A gate leakage model for double gate tunneling field-effect transistors

2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) ◽

10.1109/icsict.2014.7021522 ◽

2014 ◽

Author(s):

Ying Zhu ◽

Lining Zhang ◽

Aixi Zhang ◽

Mansun Chan

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Double Gate ◽

Gate Leakage ◽

Leakage Model ◽

Tunneling Field Effect Transistors ◽

Gate Tunneling

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Design optimization of vertical double-gate tunneling field-effect transistors

Journal of the Korean Physical Society ◽

10.3938/jkps.61.1679 ◽

2012 ◽

Vol 61 (10) ◽

pp. 1679-1682 ◽

Cited By ~ 3

Author(s):

Young Jun Yoon ◽

Sung Yun Woo ◽

Jae Hwa Seo ◽

Jae Sung Lee ◽

Yun Soo Park ◽

...

Keyword(s):

Design Optimization ◽

Field Effect ◽

Field Effect Transistors ◽

Double Gate ◽

Tunneling Field Effect Transistors ◽

Gate Tunneling

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On the compact modeling of double gate p-n-i-n tunneling field-effect transistors

TENCON 2015 - 2015 IEEE Region 10 Conference ◽

10.1109/tencon.2015.7372924 ◽

2015 ◽

Author(s):

Wanjie Xu ◽

Hei Wong ◽

Hiroshi Iwai

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Compact Modeling ◽

Double Gate ◽

Tunneling Field Effect Transistors

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