Modeling and simulation of uniaxial strain effects in armchair graphene nanoribbon tunneling field effect transistors

2010 ◽  
Vol 96 (25) ◽  
pp. 252105 ◽  
Author(s):  
Jiahao Kang ◽  
Yu He ◽  
Jinyu Zhang ◽  
Xinxin Yu ◽  
Ximeng Guan ◽  
...  
Keyword(s):  
Modeling And Simulation ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Graphene Nanoribbon ◽  
Uniaxial Strain ◽  
Strain Effects ◽  
Tunneling Field Effect Transistors ◽  
Armchair Graphene Nanoribbon ◽  
Armchair Graphene

Modeling of Drain Current in Armchair Graphene Nanoribbon Field Effect Transistor Using Transfer Matrix Method

2014 ◽  
Vol 896 ◽  
pp. 367-370 ◽  
Author(s):  
Endi Suhendi ◽  
Fatimah A. Noor ◽  
Neny Kurniasih ◽  
Khairurrijal
Keyword(s):  
Transfer Matrix ◽  
Transfer Matrix Method ◽  
Matrix Method ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Drain Current ◽  
Graphene Nanoribbon ◽  
Effect Transistor ◽  
Armchair Graphene Nanoribbon ◽  
Armchair Graphene

Drain current in an armchair graphene nanoribbon field effect transistor (AGNRFET) has been quantum mechanically modeled. The transfer matrix method (TMM) was employed to obtain the electron transmittance, and the obtained transmittance was then utilized to calculate the drain current by using the Landauer formula. The calculated results showed that the drain current increases with the gate and drain voltages. It was also shown that the threshold voltage for the device is around 0.3 V. In addition, the AGNR width influences the drain current of AGNRFET.

Sign in / Sign up

Export Citation Format

Share Document