Study on Random Dopant Fluctuation in Core–Shell Tunneling Field-Effect Transistors

2018 ◽  
Vol 65 (8) ◽  
pp. 3131-3135 ◽  
Author(s):  
Jun-Sik Yoon ◽  
Rock-Hyun Baek
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Core Shell ◽  
Random Dopant Fluctuation ◽  
Tunneling Field Effect Transistors ◽  
Random Dopant

scholarly journals Random Dopant Fluctuation-Induced Variability in n-Type Junctionless Dual-Metal Gate FinFETs

Electronics ◽  
2019 ◽  
Vol 8 (3) ◽  
pp. 282 ◽  
Author(s):  
Liang Dai ◽  
Weifeng Lü ◽  
Mi Lin
Keyword(s):  
Computer Aided Design ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Drain Voltage ◽  
Metal Gate ◽  
Random Dopant Fluctuation ◽  
Computer Aided ◽  
Dual Metal ◽  
Aided Design ◽  
Random Dopant

We investigate the effect of random dopant fluctuation (RDF)-induced variability in n-type junctionless (JL) dual-metal gate (DMG) fin field-effect transistors (FinFETs) using a 3D computer-aided design simulation. We show that the drain voltage (VDS) has a significant impact on the electrostatic integrity variability caused by RDF and is dependent on the ratio of gate lengths. The RDF-induced variability also increases as the length of control gate near the source decreases. Our simulations suggest that the proportion of the gate metal near the source to the entire gate should be greater than 0.5.

Ge-SixGe1-x core-shell nanowire tunneling field-effect transistors

2010 ◽  
Author(s):  
Junghyo Nah ◽  
Yonghyun Kim ◽  
E. -S. Liu ◽  
K. M. Varahramyan ◽  
S. K. Banerjee ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Core Shell ◽  
Tunneling Field Effect Transistors
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