Bandgap engineering of group IV materials for complementary n and p tunneling field effect transistors

R. Kotlyar; U. E. Avci; S. Cea; R. Rios; T. D. Linton; K. J. Kuhn; I. A. Young

doi:10.1063/1.4798283

Bandgap engineering of group IV materials for complementary n and p tunneling field effect transistors

Applied Physics Letters ◽

10.1063/1.4798283 ◽

2013 ◽

Vol 102 (11) ◽

pp. 113106 ◽

Cited By ~ 75

Author(s):

R. Kotlyar ◽

U. E. Avci ◽

S. Cea ◽

R. Rios ◽

T. D. Linton ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Group Iv ◽

Bandgap Engineering ◽

Tunneling Field Effect Transistors

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Material design of oxide-semiconductor/group-IV-semiconductor bilayer tunneling field effect transistors

2019 Electron Devices Technology and Manufacturing Conference (EDTM) ◽

10.1109/edtm.2019.8731302 ◽

2019 ◽

Cited By ~ 1

Author(s):

Kimihiko Kato ◽

Hiroaki Matsui ◽

Hitoshi Tabata ◽

Mitsuru Takenaka ◽

Shinichi Takagi

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Material Design ◽

Group Iv ◽

Oxide Semiconductor ◽

Tunneling Field Effect Transistors ◽

Group Iv Semiconductor

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Bandgap engineering for normally-off GaAsSb/InGaAs hetero-junction tunneling field-effect transistors with high on-state current

2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) ◽

10.1109/iciprm.2016.7528852 ◽

2016 ◽

Author(s):

Jhih-Cheng Wu ◽

Cheng-Yu Chen ◽

Jen-Inn Chyi

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Bandgap Engineering ◽

Tunneling Field Effect Transistors

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Bandgap Engineering and Strain Effects of Core–Shell Tunneling Field-Effect Transistors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2017.2767628 ◽

2018 ◽

Vol 65 (1) ◽

pp. 277-281 ◽

Cited By ~ 5

Author(s):

Jun-Sik Yoon ◽

Kihyun Kim ◽

M. Meyyappan ◽

Chang-Ki Baek

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Core Shell ◽

Bandgap Engineering ◽

Strain Effects ◽

Tunneling Field Effect Transistors

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Sub-10 nm tunneling field-effect transistors based on monolayer group IV mono-chalcogenides

Nanoscale ◽

10.1039/c9nr07590a ◽

2019 ◽

Vol 11 (48) ◽

pp. 23392-23401 ◽

Cited By ~ 4

Author(s):

Hong Li ◽

Peipei Xu ◽

Jing Lu

Keyword(s):

Band Gap ◽

Effective Mass ◽

Field Effect ◽

High Performance ◽

Field Effect Transistors ◽

Group Iv ◽

Two Dimensional ◽

Tunneling Field Effect Transistors

Optimal band gap and average effective mass of two-dimensional channels for high-performance tunneling transistors.

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7‐5: Invited Paper: Bilayer Tunneling Field Effect Transistors using Oxide Semiconductor/Group‐IV Semiconductor Hetero‐structures

SID Symposium Digest of Technical Papers ◽

10.1002/sdtp.14613 ◽

2021 ◽

Vol 52 (1) ◽

pp. 73-76

Author(s):

Shinichi Takagi ◽

Kimihiko Kato ◽

Mitsuru Takenaka

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Group Iv ◽

Oxide Semiconductor ◽

Tunneling Field Effect Transistors ◽

Group Iv Semiconductor

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Designing band-to-band tunneling field-effect transistors with 2D semiconductors for next-generation low-power VLSI

2015 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2015.7409682 ◽

2015 ◽

Cited By ~ 11

Author(s):

Wei Cao ◽

Junkai Jiang ◽

Jiahao Kang ◽

Deblina Sarkar ◽

Wei Liu ◽

...

Keyword(s):

Low Power ◽

Field Effect ◽

Field Effect Transistors ◽

Next Generation ◽

2D Semiconductors ◽

Band To Band Tunneling ◽

Tunneling Field Effect Transistors

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Study of fully-depleted Ge double-gate n-type Tunneling Field-Effect Transistors for improvement in on-state current and sub-threshold swing

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2017.08.014 ◽

2018 ◽

Vol 95 ◽

pp. 51-58 ◽

Cited By ~ 3

Author(s):

Xiangyu Liu ◽

Huiyong Hu ◽

Meng Wang ◽

Heming Zhang ◽

Shimin Cui ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Double Gate ◽

Fully Depleted ◽

Tunneling Field Effect Transistors

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Modeling and performance analysis of GaN nanowire field-effect transistors and band-to-band tunneling field-effect transistors

Journal of Applied Physics ◽

10.1063/1.3510502 ◽

2010 ◽

Vol 108 (10) ◽

pp. 104503 ◽

Cited By ~ 11

Author(s):

M. Abul Khayer ◽

Roger K. Lake

Keyword(s):

Performance Analysis ◽

Field Effect ◽

Field Effect Transistors ◽

Band To Band Tunneling ◽

Tunneling Field Effect Transistors ◽

Gan Nanowire ◽

And Performance

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Monolayer WxMo1−xS2Grown by Atmospheric Pressure Chemical Vapor Deposition: Bandgap Engineering and Field Effect Transistors

Advanced Functional Materials ◽

10.1002/adfm.201606469 ◽

2017 ◽

Vol 27 (13) ◽

pp. 1606469 ◽

Cited By ~ 22

Author(s):

Xinke Liu ◽

Jing Wu ◽

Wenjie Yu ◽

Le Chen ◽

Zhonghui Huang ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Atmospheric Pressure ◽

Field Effect ◽

Field Effect Transistors ◽

Chemical Vapor ◽

Bandgap Engineering ◽

Pressure Chemical

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Self-aligned fabrication of 10 nm wide asymmetric trenches for Si/SiGe heterojunction tunneling field effect transistors using nanoimprint lithography, shadow evaporation, and etching

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3237138 ◽

2009 ◽

Vol 27 (6) ◽

pp. 2790 ◽

Cited By ~ 12

Author(s):

Chao Wang ◽

Stephen Y. Chou

Keyword(s):

Nanoimprint Lithography ◽

Field Effect ◽

Field Effect Transistors ◽

Tunneling Field Effect Transistors ◽

Shadow Evaporation

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