A Stand-Alone, Physics-Based, Measurement-Driven Model and Simulation Tool for Random Telegraph Signals Originating From Experimentally Identified MOS Gate-Oxide Defects

2016 ◽  
Vol 63 (4) ◽  
pp. 1428-1436 ◽  
Author(s):  
Mohamed Nour ◽  
Zeynep Celik-Butler ◽  
Arif Sonnet ◽  
Fan-Chi Hou ◽  
Shaoping Tang ◽  
...  
Keyword(s):  
Gate Oxide ◽  
Simulation Tool ◽  
Model And Simulation ◽  
Random Telegraph Signals ◽  
Oxide Defects ◽  
Mos Gate

Two Types of ${E}^{\prime}$ Centers as Gate Oxide Defects Responsible for Hole Trapping and Random Telegraph Signals in pMOSFETs

2018 ◽  
Vol 65 (10) ◽  
pp. 4527-4534 ◽  
Author(s):  
A.S.M. Shamsur Rouf ◽  
Zeynep Celik-Butler ◽  
Fan-Chi Hou ◽  
Shaoping Tang ◽  
Guru Mathur
Keyword(s):  
Gate Oxide ◽  
Hole Trapping ◽  
Random Telegraph Signals ◽  
Oxide Defects

Octahedral-Structured Gigantic Precipitates as the Origin of Gate-Oxide Defects in Metal-Oxide-Semiconductor Large-Scale-Integrated Circuits

1996 ◽  
Vol 35 (Part 1, No. 2B) ◽  
pp. 812-817 ◽  
Author(s):  
Manabu Itsumi ◽  
Hideo Akiya ◽  
Takemi Ueki ◽  
Masato Tomita ◽  
Masataka Yamawaki
Keyword(s):  
Integrated Circuits ◽  
Metal Oxide ◽  
Large Scale ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Oxide Defects

Development of a Model and Simulation Tool to Predict Hydrate Growth in Flowlines for Gas Hydrate Production

2020 ◽  
Author(s):  
Shunsuke Sakurai ◽  
Bruce Norris ◽  
Ben Hoskin ◽  
Joel Choi ◽  
Tomoya Nonoue ◽  
...  
Keyword(s):  
Gas Hydrate ◽  
Simulation Tool ◽  
Model And Simulation

Gate-Prior-To-Isolation Cmos-Technology with Through-The-Gate-Implanted Ultra-Thin Gate Oxides

1999 ◽  
Vol 567 ◽  
Author(s):  
Udo Schwalke ◽  
Christian Gruensfelder ◽  
Alexander Gschwandtner ◽  
Gudrun Innertsberger ◽  
Martin Kerber
Keyword(s):  
Gate Oxide ◽  
Cmos Technology ◽  
Wafer Surface ◽  
Shallow Trench Isolation ◽  
Trench Isolation ◽  
Process Architecture ◽  
Process Complexity ◽  
Mos Gate ◽  
Cluster Tool

ABSTRACTWe have realized direct-tunneling gate oxide (1.6nm) NMOS and PMOS transistors by means of through-the-gate-implantation in a comer parasitics-free shallow-trench-isolation CMOS technology. In order to take full advantage of in-situ cluster-tool processing and to preserve initial wafer-surface quality, the essential part of the MOS gate is fabricated prior to device isolation and through-the-gate-implantation is utilized for well- and channel doping. In addition, a fully-reinforced-gate-oxide-perimeter is provided and trench comer parasitics are eliminated by the advanced process architecture EXTIGATE without increasing process complexity.

Reliability of 4H-SiC(000-1) MOS Gate Oxide Using N2O Nitridation

2009 ◽  
Vol 615-617 ◽  
pp. 557-560 ◽  
Author(s):  
Takuma Suzuki ◽  
Junji Senzaki ◽  
Tetsuo Hatakeyama ◽  
Kenji Fukuda ◽  
Takashi Shinohe ◽  
...  
Keyword(s):  
Dielectric Breakdown ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Band Offset ◽  
Mos Capacitors ◽  
Conduction Band Offset ◽  
Time Dependent Dielectric Breakdown ◽  
Oxide Reliability ◽  
Mos Gate

The oxide reliability of metal-oxide-semiconductor (MOS) capacitors on 4H-SiC(000-1) carbon face was investigated. The gate oxide was fabricated by using N2O nitridation. The effective conduction band offset (Ec) of MOS structure fabricated by N2O nitridation was increased to 2.2 eV compared with Ec = 1.7 eV for pyrogenic oxidation sample of. Furthermore, significant improvements in the oxide reliability were observed by time-dependent dielectric breakdown (TDDB) measurement. It is suggested that the N2O nitridation as a method of gate oxide fabrication satisfies oxide reliability on 4H-SiC(000-1) carbon face MOSFETs.

Effect of Growth Conditions on the Reliability of Ultrathin MOS Gate Oxides

1996 ◽  
Vol 428 ◽  
Author(s):  
Tien-Chun Yang ◽  
Krishna C. Saraswat
Keyword(s):  
Gate Oxide ◽  
Interface State ◽  
Growth Conditions ◽  
Physical Stress ◽  
Constant Current ◽  
Strong Function ◽  
Oxidation Rates ◽  
Mos Devices ◽  
State Generation ◽  
Mos Gate

AbstractIn this work we demonstrate that in MOS devices the reliability of ultrathin (< 100Å) gate oxide is a strong function of growth conditions, such as, temperature and the growth rate. In addition, for constant current gate injection the degradation of SiO2 is enhanced as the thickness is reduced. We attribute this to physical stress in SiO2 resulting from the growth process. The degradation is always more for those growth conditions which result in higher physical stress in SiO2. Higher temperatures and slower oxidation rates allow stress relaxation through viscous flow and hence result in SiO2 of better reliability. We also found that for constant current stressing, the interface damage is more at the collecting electrode than at the injecting electrode. ΔDit (stress induced interface state generation) can be reduced after a high temperature Ar post anneal after the gate oxide growth.

The defect-centric perspective of device and circuit reliability—From gate oxide defects to circuits

2016 ◽  
Vol 125 ◽  
pp. 52-62 ◽  
Author(s):  
B. Kaczer ◽  
J. Franco ◽  
P. Weckx ◽  
Ph.J. Roussel ◽  
M. Simicic ◽  
...  
Keyword(s):  
Gate Oxide ◽  
Circuit Reliability ◽  
Oxide Defects
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