Cu/Low-$k$ Interconnect Technology Design and Benchmarking for Future Technology Nodes

2013 ◽  
Vol 60 (12) ◽  
pp. 4041-4047 ◽  
Author(s):  
Ahmet Ceyhan ◽  
Azad Naeemi
Keyword(s):  
Technology Design ◽  
Future Technology ◽  
Technology Nodes ◽  
Interconnect Technology ◽  
Low K

Effect of B dose and Ge preamorphization energy on the electrical and structural properties of ultrashallow junctions in silicon-on-insulator

2006 ◽  
Vol 912 ◽  
Author(s):  
Justin J Hamilton ◽  
Erik JH Collart ◽  
Benjamin Colombeau ◽  
Massimo Bersani ◽  
Damiano Giubertoni ◽  
...  
Keyword(s):  
Structural Properties ◽  
Solid Phase ◽  
Silicon Film ◽  
Silicon On Insulator ◽  
Bulk Silicon ◽  
Defect Band ◽  
Future Technology ◽  
Ultrashallow Junctions ◽  
P Type ◽  
Technology Nodes

AbstractFormation of highly activated, ultra-shallow and abrupt profiles is a key requirement for the next generations of CMOS devices, particularly for source-drain extensions. For p-type dopant implants (boron), a promising method of increasing junction abruptness is to use Ge preamorphizing implants prior to ultra-low energy B implantation and solid-phase epitaxy regrowth to re-crystallize the amorphous Si. However, for future technology nodes, new issues arise when bulk silicon is supplanted by silicon-on-insulator (SOI). Previous results have shown that the buried Si/SiO2 interface can improve dopant activation, but the effect depends on the detailed preamorphization conditions and further optimization is required. In this paper a range of B doses and Ge energies have been chosen in order to situate the end-of-range (EOR) defect band at various distances from the back interface of the active silicon film (the interface with the buried oxide), in order to explore and optimize further the effect of the interface on dopant behavior. Electrical and structural properties were measured by Hall Effect and SIMS techniques. The results show that the boron deactivates less in SOI material than in bulk silicon, and crucially, that the effect increases as the distance from the EOR defect band to the back interface is decreased. For the closest distances, an increase in junction steepness is also observed, even though the B is located close to the top surface, and thus far from the back interface. The position of the EOR defect band shows the strongest influence for lower B doses.

scholarly journals Collect Your Happiness: A Case Study of Using Positive Psychology Principles in Technology Design (Preprint)

2018 ◽  
Author(s):  
Lekai Zhang ◽  
Shouqian Sun ◽  
Kejun Zhang ◽  
Kevin Wolterink ◽  
Baixi Xing
Keyword(s):  
Positive Psychology ◽  
Cross Cultural ◽  
Future Research ◽  
Multimedia Database ◽  
Technology Design ◽  
Interactive Applications ◽  
Future Technology ◽  
Human Happiness ◽  
The Difference

BACKGROUND More and more of our daily activities depend on smartphones and applications. Thus, an increasing number of studies are interested in whether interactive applications can be used to improve happiness of individuals. OBJECTIVE The study aimed to develop and test a digital application designed for happiness. METHODS This paper presents an application called Collect Your Happiness (CYH) that is based on some positive psychology principles. It can not only enhance people’s happiness by collecting their daily happy moments, but provide small tasks to improve their happiness levels. A cross-cultural measurement between the Chinese and Dutch was conducted to evaluate the efficacy of this intervention by SHS, SWLS, PGWBI, and MAAS. In addition, collected moments were coded based on Selig- man’s PERMA model to analyze the cultural differences. RESULTS Results show that CYH can help people from both countries improve their happiness. The Chinese tended to find their happiness in relationships (R) with their friends and family, however, the Dutch tended to search for meaning (M) and engagement (E) in their lives. CONCLUSIONS In this paper, we developed an application that provided recording positive things, reminders for the past happy moments and tasks for users to gain happiness. The CYH successfully enhance the happiness of the cross-cultural users for four weeks. We also explored the difference of happiness between the Dutch and the Chinese based on Seligman’s PERMA model, and established a multimedia database of happiness for future research. Despite some limitations, most users found the application helpful to improve their happiness. By directly measuring subjective and multidimensional perspectives of happiness, there is potential to more successfully promote people’s happiness. Overall, our study not only complement existing positive psychological interventions that enhance human happiness, but it also suggests novel ways of applying positive psychology principles in the future technology design.

Reduction of CNT Interconnect Resistance for the Replacement of Cu for Future Technology Nodes

2012 ◽  
Vol 11 (1) ◽  
pp. 56-62 ◽  
Author(s):  
Jonathan W. Ward ◽  
Jonathan Nichols ◽  
Timothy B. Stachowiak ◽  
Quoc Ngo ◽  
E. James Egerton
Keyword(s):  
Future Technology ◽  
Technology Nodes ◽  
Interconnect Resistance

A Comparative Study of Ti/Low-k HSQ (Hydrogen Silsesquioxane) and Ti/TEOS (Tetraethylorthosilicate) Structures at Elevated Temperatures

2000 ◽  
Vol 612 ◽  
Author(s):  
Yuxiao Zeng ◽  
Linghui Chen ◽  
T. L. Alford
Keyword(s):  
Comparative Study ◽  
Direct Contact ◽  
Elevated Temperatures ◽  
Primary Source ◽  
Hydrogen Silsesquioxane ◽  
Titanium Layer ◽  
To Come ◽  
Al Metallization ◽  
Interconnect Technology ◽  
Low K

AbstractFor the benefit of reducing capacitance in multilevel interconnect technology, low-k dielectric HSQ (hydrogen silsesquioxane) has been used as a gapfill material in Al-metallization- based non-etchback embedded scheme. The vias are consequently fabricated through the HSQ layer followed by W plug deposition. In order to reduce the extent of via poisoning and achieve good W/Al contact, thin Ti/TiN stack films are typically deposited before via plug deposition. In this case, HSQ makes direct contact with the Ti layer. The reliability of the Ti/HSQ structures at elevated temperatures has been systematically studied in this work by using a variety of techniques. These results are also compared with those from Ti/TEOS (Tetraethylorthosilicate) structure, where TEOS is a conventional intra-metal dielectric. When the temperature is below 550 °C, a significant number of oxygen atoms are observed to diffuse into the titanium layer. The primary source of oxygen is believed to come from the HSQ film. When the temperature is above 550 °C, HSQ starts to react with Ti. At 700 °C, a TiO/Ti5Si3/HSQ stack structure forms. The Ti/HSQ system exhibits a higher reactivity than that of the Ti/TEOS system.

Photomask etch challenges for future technology nodes

2006 ◽  
Author(s):  
Madhavi Chandrachood ◽  
Michael Grimbergen ◽  
Toi Yue B. Leung ◽  
Keven Yu ◽  
Renee Koch ◽  
...  
Keyword(s):  
Future Technology ◽  
Technology Nodes

TiN Metal Hardmask Residue Removal Formulation Development for Advanced Porous Low-K and Cu Interconnect Application

2014 ◽  
Vol 219 ◽  
pp. 217-220 ◽  
Author(s):  
Hua Cui
Keyword(s):  
Aspect Ratio ◽  
Metal Deposition ◽  
Formulation Development ◽  
Chemical Cleaning ◽  
Residue Removal ◽  
Profile Control ◽  
Cu Interconnect ◽  
Tin Metal ◽  
Technology Nodes ◽  
Low K

TiN metal hardmask has been used to improve etch selectivity to low-k materials and thereby gain better profile control. For 14 nm and smaller technology nodes, it is required that the TiN hardmask is completely removed in order to improve the aspect ratio for subsequent reliable metal deposition. Thus, a chemical cleaning formulation with high TiN etch selectivity toward Cu and low-k is required.

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