Application of electron-beam illuminated low-k silicate to nanoscale interconnect technology

2004 ◽  
Author(s):  
Po-Tsun Liu ◽  
T.C. Chang ◽  
Z.W. Lin ◽  
T.M. Tsai ◽  
C.W. Chen ◽  
...  
Keyword(s):  
Electron Beam ◽  
Interconnect Technology ◽  
Low K

A Comparative Study of Ti/Low-k HSQ (Hydrogen Silsesquioxane) and Ti/TEOS (Tetraethylorthosilicate) Structures at Elevated Temperatures

2000 ◽  
Vol 612 ◽  
Author(s):  
Yuxiao Zeng ◽  
Linghui Chen ◽  
T. L. Alford
Keyword(s):  
Comparative Study ◽  
Direct Contact ◽  
Elevated Temperatures ◽  
Primary Source ◽  
Hydrogen Silsesquioxane ◽  
Titanium Layer ◽  
To Come ◽  
Al Metallization ◽  
Interconnect Technology ◽  
Low K

AbstractFor the benefit of reducing capacitance in multilevel interconnect technology, low-k dielectric HSQ (hydrogen silsesquioxane) has been used as a gapfill material in Al-metallization- based non-etchback embedded scheme. The vias are consequently fabricated through the HSQ layer followed by W plug deposition. In order to reduce the extent of via poisoning and achieve good W/Al contact, thin Ti/TiN stack films are typically deposited before via plug deposition. In this case, HSQ makes direct contact with the Ti layer. The reliability of the Ti/HSQ structures at elevated temperatures has been systematically studied in this work by using a variety of techniques. These results are also compared with those from Ti/TEOS (Tetraethylorthosilicate) structure, where TEOS is a conventional intra-metal dielectric. When the temperature is below 550 °C, a significant number of oxygen atoms are observed to diffuse into the titanium layer. The primary source of oxygen is believed to come from the HSQ film. When the temperature is above 550 °C, HSQ starts to react with Ti. At 700 °C, a TiO/Ti5Si3/HSQ stack structure forms. The Ti/HSQ system exhibits a higher reactivity than that of the Ti/TEOS system.

scholarly journals Effect of electron beam treatment on adhesion of Ta/polymeric low-k interface

2006 ◽  
Vol 88 (23) ◽  
pp. 233510 ◽  
Author(s):  
Zhenghao Gan ◽  
Zhong Chen ◽  
S. G. Mhaisalkar ◽  
M. Damayanti ◽  
Zhe Chen ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Treatment ◽  
Low K

Measurement of Low-k Polymerimetal Interfacial Toughness Using 4-point Bending Method

1996 ◽  
Vol 436 ◽  
Author(s):  
Qing Ma ◽  
Chuanbin Pan ◽  
Harry Fujimoto ◽  
Baylor Triplett ◽  
Peter Coon ◽  
...  
Keyword(s):  
Polymer Film ◽  
Polymer Films ◽  
Adhesion Promoter ◽  
Adhesion Properties ◽  
Interfacial Toughness ◽  
Four Point Bending ◽  
Arylene Ether ◽  
Thin Polymer ◽  
Interconnect Technology ◽  
Low K

AbstractFour-point bending method offers significant advantages over more traditional techniques in measuring adhesion properties of thin polymer films. The former utilizes sandwich structure beams where the polymer film and the interface of interest are placed at the center of two elastic bulks. Such confined geometry closely resembles applications where polymer films are used as dielectric layers in IC interconnect technology. In this work, the bonding between a poly(arylene ether) (PAE) based polymer film and an Al film was studied. Ti layers of several different thickness were used as adhesion promoter. The sandwich samples were made by bonding bulk wafers using an epoxy. Fracture energies were seen to increase with the thickness of the Ti layer. Effects of heat treatment were also studied.

Low-k Integration Using Metallic Hard Masks

2012 ◽  
Vol 187 ◽  
pp. 193-195 ◽  
Author(s):  
O. Joubert ◽  
Nicolas Possémé ◽  
Thierry Chevolleau ◽  
Thibaut David ◽  
M. Darnon
Keyword(s):  
Metal Contamination ◽  
High Sensitivity ◽  
Dielectric Materials ◽  
Plasma Exposure ◽  
Air Exposure ◽  
Hard Mask ◽  
Patterned Structures ◽  
Complex Integration ◽  
Interconnect Technology ◽  
Low K

For the 45 nm interconnect technology node, porous dielectric materials (p-SiOCH) have been introduced, leading to complex integration issues due to their high sensitivity upon FC etching and ashing plasma exposure [1, 2]. Thanks to Metallic hard mask (MHM) integration high selectivities towards dielectric materials (>100:1) can be reached and minimizes exposure of p-SiOCH films to ashing plasmas. However MHM such as TiN generates other issues such as i) metal contamination in the patterned structures and ii) growth of metal based residues on the top of the hard mask [3, 4, 5]. The residues growth, which is air exposure time dependent, directly impacts the yield performance with the generation of via and line opens [.

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