Threshold Voltage Shift Due to Charge Trapping in Dielectric-Gated AlGaN/GaN High Electron Mobility Transistors Examined in Au-Free Technology

2013 ◽  
Vol 60 (10) ◽  
pp. 3197-3203 ◽  
Author(s):  
Derek W. Johnson ◽  
Rinus T. P. Lee ◽  
Richard J. W. Hill ◽  
Man Hoi Wong ◽  
Gennadi Bersuker ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Electron Mobility ◽  
Charge Trapping ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Threshold Voltage Shift ◽  
High Electron Mobility ◽  
Voltage Shift ◽  
Electron Mobility Transistors

Boron Nitride as a Passivation Capping Layer for AlGaN/GaN High Electron Mobility Transistors

2020 ◽  
Vol 20 (7) ◽  
pp. 4450-4453 ◽  
Author(s):  
Gun Hee Lee ◽  
Ah Hyun Park ◽  
Jin Hong Lim ◽  
Chil-Hyoung Lee ◽  
Dae-Woo Jeon ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Electron Mobility ◽  
Hexagonal Boron Nitride ◽  
Electronic Devices ◽  
Charge Trapping ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Capping Layer ◽  
Electron Mobility Transistors

We report on the electrical characteristics of AlGaN/GaN high-electron mobility transistors (HEMTs) with hexagonal boron nitride (h-BN) as a passivation capping layer. The HEMTs with h-BN layers showed an increase in current drainage and 103-times reduction in the gate-leakage current compared with those of conventional unpassivated HEMTs. Moreover, the extrinsic transconductance and the pulse responses were improved due to the reduced charge-trapping effect at the surface of HEMTs. From our observations, the h-BN can be used as a passivation capping layer for high-power electronic devices.

scholarly journals Modeling of high composition AlGaN channel high electron mobility transistors with large threshold voltage

2014 ◽  
Vol 105 (26) ◽  
pp. 263503 ◽  
Author(s):  
Sanyam Bajaj ◽  
Ting-Hsiang Hung ◽  
Fatih Akyol ◽  
Digbijoy Nath ◽  
Siddharth Rajan
Keyword(s):  
Threshold Voltage ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors
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