Using in-process measurements of open-gate structures to evaluate threshold voltage of normally-off GaN-based high electron mobility transistors

2015 ◽  
Vol 107 (16) ◽  
pp. 163503 ◽  
Author(s):  
Bin Hou ◽  
Xiao-Hua Ma ◽  
Wei-Wei Chen ◽  
Jie-Jie Zhu ◽  
Sheng-Lei Zhao ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Process Measurements

scholarly journals Modeling of high composition AlGaN channel high electron mobility transistors with large threshold voltage

2014 ◽  
Vol 105 (26) ◽  
pp. 263503 ◽  
Author(s):  
Sanyam Bajaj ◽  
Ting-Hsiang Hung ◽  
Fatih Akyol ◽  
Digbijoy Nath ◽  
Siddharth Rajan
Keyword(s):  
Threshold Voltage ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Time-dependent degradation of threshold voltage in AlGaN/GaN high electron mobility transistors

2014 ◽  
Vol 23 (1) ◽  
pp. 017303
Author(s):  
Xiao-Hua Ma ◽  
Yuan-Qi Jiang ◽  
Xin-Hua Wang ◽  
Min Lü ◽  
Huo Zhang ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Time Dependent ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors
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