Modeling of high composition AlGaN channel high electron mobility transistors with large threshold voltage

Sanyam Bajaj; Ting-Hsiang Hung; Fatih Akyol; Digbijoy Nath; Siddharth Rajan

doi:10.1063/1.4905323

Modeling of high composition AlGaN channel high electron mobility transistors with large threshold voltage

Applied Physics Letters ◽

10.1063/1.4905323 ◽

2014 ◽

Vol 105 (26) ◽

pp. 263503 ◽

Cited By ~ 36

Author(s):

Sanyam Bajaj ◽

Ting-Hsiang Hung ◽

Fatih Akyol ◽

Digbijoy Nath ◽

Siddharth Rajan

Keyword(s):

Threshold Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Control of Threshold Voltage in GaN Based Metal–Oxide–Semiconductor High-Electron Mobility Transistors towards the Normally-Off Operation

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.08jn08 ◽

2013 ◽

Vol 52 (8S) ◽

pp. 08JN08 ◽

Cited By ~ 20

Author(s):

Milan Ťapajna ◽

Ján Kuzmík

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides

Applied Physics Express ◽

10.7567/apex.8.084101 ◽

2015 ◽

Vol 8 (8) ◽

pp. 084101 ◽

Cited By ~ 1

Author(s):

Po-Chun Yeh ◽

Yun-Wei Lin ◽

Yue-Lin Huang ◽

Jui-Hung Hung ◽

Bo-Ren Lin ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Threshold Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Atomic Layer ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Layer Deposition ◽

Gate Recess

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Threshold Voltage Instability in Al$_{2}$O$_{3}$/GaN/AlGaN/GaN Metal–Insulator–Semiconductor High-Electron Mobility Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.110202 ◽

2011 ◽

Vol 50 ◽

pp. 110202 ◽

Cited By ~ 25

Author(s):

Sen Huang ◽

Shu Yang ◽

John Roberts ◽

Kevin J. Chen

Keyword(s):

Threshold Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Metal Insulator Semiconductor ◽

Voltage Instability ◽

Electron Mobility Transistors

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1.5-V-threshold-voltage Schottky barrier normally-off AlGaN/GaN high-electron-mobility transistors withfT/fmaxof 41/125 GHz

Applied Physics Express ◽

10.7567/apex.10.076501 ◽

2017 ◽

Vol 10 (7) ◽

pp. 076501

Author(s):

Bin Hou ◽

Xiaohua Ma ◽

Ling Yang ◽

Jiejie Zhu ◽

Qing Zhu ◽

...

Keyword(s):

Schottky Barrier ◽

Threshold Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Threshold voltage uniformity and characterization of microwave performance for GaAs/AlGaAs high electron-mobility transistors grown on Si substrates

IEEE Transactions on Electron Devices ◽

10.1109/16.485533 ◽

1996 ◽

Vol 43 (4) ◽

pp. 527-534 ◽

Cited By ~ 5

Author(s):

T. Aigo ◽

M. Goto ◽

Y. Ohta ◽

A. Jono ◽

A. Tachikawa ◽

...

Keyword(s):

Threshold Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Si Substrates ◽

Electron Mobility Transistors

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Using in-process measurements of open-gate structures to evaluate threshold voltage of normally-off GaN-based high electron mobility transistors

Applied Physics Letters ◽

10.1063/1.4934185 ◽

2015 ◽

Vol 107 (16) ◽

pp. 163503 ◽

Cited By ~ 2

Author(s):

Bin Hou ◽

Xiao-Hua Ma ◽

Wei-Wei Chen ◽

Jie-Jie Zhu ◽

Sheng-Lei Zhao ◽

...

Keyword(s):

Threshold Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Process Measurements

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Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

Applied Physics Letters ◽

10.1063/1.4930076 ◽

2015 ◽

Vol 107 (9) ◽

pp. 093507 ◽

Cited By ~ 38

Author(s):

Tian-Li Wu ◽

Denis Marcon ◽

Benoit Bakeroot ◽

Brice De Jaeger ◽

H. C. Lin ◽

...

Keyword(s):

Threshold Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Threshold Voltage Shift ◽

Metal Insulator ◽

High Electron Mobility ◽

Metal Insulator Semiconductor ◽

Voltage Shift ◽

Electron Mobility Transistors

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Threshold Voltage Shift Due to Charge Trapping in Dielectric-Gated AlGaN/GaN High Electron Mobility Transistors Examined in Au-Free Technology

IEEE Transactions on Electron Devices ◽

10.1109/ted.2013.2278677 ◽

2013 ◽

Vol 60 (10) ◽

pp. 3197-3203 ◽

Cited By ~ 36

Author(s):

Derek W. Johnson ◽

Rinus T. P. Lee ◽

Richard J. W. Hill ◽

Man Hoi Wong ◽

Gennadi Bersuker ◽

...

Keyword(s):

Threshold Voltage ◽

Electron Mobility ◽

Charge Trapping ◽

High Electron Mobility Transistors ◽

High Electron ◽

Threshold Voltage Shift ◽

High Electron Mobility ◽

Voltage Shift ◽

Electron Mobility Transistors

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Explanation of threshold voltage scaling in enhancement-mode InAlN/AlN–GaN metal oxide semiconductor high electron mobility transistors on Si substrates

Thin Solid Films ◽

10.1016/j.tsf.2012.05.073 ◽

2012 ◽

Vol 520 (19) ◽

pp. 6230-6232 ◽

Cited By ~ 15

Author(s):

A. Alexewicz ◽

C. Ostermaier ◽

C. Henkel ◽

O. Bethge ◽

J.-F. Carlin ◽

...

Keyword(s):

Threshold Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Si Substrates ◽

Enhancement Mode ◽

Electron Mobility Transistors

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Time-dependent degradation of threshold voltage in AlGaN/GaN high electron mobility transistors

Chinese Physics B ◽

10.1088/1674-1056/23/1/017303 ◽

2014 ◽

Vol 23 (1) ◽

pp. 017303

Author(s):

Xiao-Hua Ma ◽

Yuan-Qi Jiang ◽

Xin-Hua Wang ◽

Min Lü ◽

Huo Zhang ◽

...

Keyword(s):

Threshold Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Time Dependent ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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