Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

Tian-Li Wu; Denis Marcon; Benoit Bakeroot; Brice De Jaeger; H. C. Lin; Jacopo Franco; Steve Stoffels; Marleen Van Hove; Robin Roelofs; Guido Groeseneken; Stefaan Decoutere

doi:10.1063/1.4930076

Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

Applied Physics Letters ◽

10.1063/1.4930076 ◽

2015 ◽

Vol 107 (9) ◽

pp. 093507 ◽

Cited By ~ 38

Author(s):

Tian-Li Wu ◽

Denis Marcon ◽

Benoit Bakeroot ◽

Brice De Jaeger ◽

H. C. Lin ◽

...

Keyword(s):

Threshold Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Threshold Voltage Shift ◽

Metal Insulator ◽

High Electron Mobility ◽

Metal Insulator Semiconductor ◽

Voltage Shift ◽

Electron Mobility Transistors

Download Full-text

Threshold Voltage Instability in Al$_{2}$O$_{3}$/GaN/AlGaN/GaN Metal–Insulator–Semiconductor High-Electron Mobility Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.110202 ◽

2011 ◽

Vol 50 ◽

pp. 110202 ◽

Cited By ~ 25

Author(s):

Sen Huang ◽

Shu Yang ◽

John Roberts ◽

Kevin J. Chen

Keyword(s):

Threshold Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Metal Insulator Semiconductor ◽

Voltage Instability ◽

Electron Mobility Transistors

Download Full-text

Threshold Voltage Shift Due to Charge Trapping in Dielectric-Gated AlGaN/GaN High Electron Mobility Transistors Examined in Au-Free Technology

IEEE Transactions on Electron Devices ◽

10.1109/ted.2013.2278677 ◽

2013 ◽

Vol 60 (10) ◽

pp. 3197-3203 ◽

Cited By ~ 36

Author(s):

Derek W. Johnson ◽

Rinus T. P. Lee ◽

Richard J. W. Hill ◽

Man Hoi Wong ◽

Gennadi Bersuker ◽

...

Keyword(s):

Threshold Voltage ◽

Electron Mobility ◽

Charge Trapping ◽

High Electron Mobility Transistors ◽

High Electron ◽

Threshold Voltage Shift ◽

High Electron Mobility ◽

Voltage Shift ◽

Electron Mobility Transistors

Download Full-text

Effect of border traps on the threshold voltage instability of fluoride-doped AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors

Journal of Physics D Applied Physics ◽

10.1088/1361-6463/ab053d ◽

2019 ◽

Vol 52 (19) ◽

pp. 195102 ◽

Cited By ~ 1

Author(s):

Li-Cheng Chang ◽

Shin-Yi Yin ◽

Chao-Hsin Wu

Keyword(s):

Threshold Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Metal Insulator Semiconductor ◽

Voltage Instability ◽

Electron Mobility Transistors

Download Full-text

Influence of GaN Stress on Threshold Voltage Shift in AlGaN/GaN High-Electron-Mobility Transistors on Si under Off-State Electrical Bias

Applied Physics Express ◽

10.7567/apex.6.086504 ◽

2013 ◽

Vol 6 (8) ◽

pp. 086504 ◽

Cited By ~ 11

Author(s):

Amalraj Frank Wilson ◽

Akio Wakejima ◽

Takashi Egawa

Keyword(s):

Threshold Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Threshold Voltage Shift ◽

High Electron Mobility ◽

Voltage Shift ◽

Electron Mobility Transistors ◽

Electrical Bias

Download Full-text

Threshold voltage modulation mechanism of AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors with fluorinated Al2O3 as gate dielectrics

Applied Physics Letters ◽

10.1063/1.3699029 ◽

2012 ◽

Vol 100 (13) ◽

pp. 133507 ◽

Cited By ~ 4

Author(s):

Chao Chen ◽

Xingzhao Liu ◽

Jihua Zhang ◽

Benlang Tian ◽

Hongchuan Jiang ◽

...

Keyword(s):

Threshold Voltage ◽

Electron Mobility ◽

Gate Dielectrics ◽

High Electron Mobility Transistors ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Metal Insulator Semiconductor ◽

Electron Mobility Transistors

Download Full-text

Threshold Voltage Instability in Al2O3/GaN/AlGaN/GaN Metal–Insulator–Semiconductor High-Electron Mobility Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.110202 ◽

2011 ◽

Vol 50 (11R) ◽

pp. 110202 ◽

Cited By ~ 50

Author(s):

Sen Huang ◽

Shu Yang ◽

John Roberts ◽

Kevin J. Chen

Keyword(s):

Threshold Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Metal Insulator Semiconductor ◽

Voltage Instability ◽

Electron Mobility Transistors

Download Full-text

Fabrication of normally-off AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors by photo-electrochemical gate recess etching in ionic liquid

Applied Physics Express ◽

10.7567/apex.9.084102 ◽

2016 ◽

Vol 9 (8) ◽

pp. 084102 ◽

Cited By ~ 8

Author(s):

Zhili Zhang ◽

Shuangjiao Qin ◽

Kai Fu ◽

Guohao Yu ◽

Weiyi Li ◽

...

Keyword(s):

Ionic Liquid ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Metal Insulator Semiconductor ◽

Electron Mobility Transistors ◽

Gate Recess

Download Full-text

Enhancement-Mode LaLuO3–AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors Using Fluorine Plasma Ion Implantation

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.08jn02 ◽

2013 ◽

Vol 52 (8S) ◽

pp. 08JN02 ◽

Cited By ~ 2

Author(s):

Shu Yang ◽

Sen Huang ◽

Michael Schnee ◽

Qing-Tai Zhao ◽

Jürgen Schubert ◽

...

Keyword(s):

Ion Implantation ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Metal Insulator Semiconductor ◽

Enhancement Mode ◽

Electron Mobility Transistors

Download Full-text

Time-dependent characteristics and physical mechanisms of AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors under different bias conditions

Journal of Physics D Applied Physics ◽

10.1088/1361-6463/ab3d52 ◽

2019 ◽

Vol 52 (48) ◽

pp. 485106 ◽

Cited By ~ 2

Author(s):

Shanjie Li ◽

Zhiyuan He ◽

Rui Gao ◽

Yiqiang Chen ◽

Yang Liu ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Time Dependent ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Metal Insulator Semiconductor ◽

Physical Mechanisms ◽

Electron Mobility Transistors

Download Full-text

Effect of alpha-particle irradiation dose on SiNx/AlGaN/GaN metal–insulator semiconductor high electron mobility transistors

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.5042261 ◽

2018 ◽

Vol 36 (4) ◽

pp. 041203 ◽

Cited By ~ 1

Author(s):

Chaker Fares ◽

Fan Ren ◽

Stephen J. Pearton ◽

Gwangseok Yang ◽

Jihyun Kim ◽

...

Keyword(s):

Alpha Particle ◽

Electron Mobility ◽

Irradiation Dose ◽

High Electron Mobility Transistors ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Metal Insulator Semiconductor ◽

Electron Mobility Transistors ◽

Particle Irradiation

Download Full-text